scholarly journals Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires

Nanoscale ◽  
2018 ◽  
Vol 10 (41) ◽  
pp. 19443-19449 ◽  
Author(s):  
M. Sistani ◽  
M. S. Seifner ◽  
M. G. Bartmann ◽  
J. Smoliner ◽  
A. Lugstein ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Elevated Temperatures ◽  
Electrical Characterization ◽  
High Electrical Conductivity ◽  
Device Stability ◽  
The Impact ◽  
Metastable Material

Electrical characterization of Ge0.81Sn0.19 nanowires has been performed revealing high electrical conductivity and semiconductor behaviour when cooled to 10 K. The impact on slightly elevated temperatures on the device stability of this metastable material is described.

Electrical Characterization of E7 Liquid Crystal Molecules under the Impact of an External Electric Field (THz): A Theoretical approach

2020 ◽  
Vol 15 (2) ◽  
pp. 95-101
Keyword(s):  
Liquid Crystal ◽  
Electric Field ◽  
Order Parameter ◽  
Optical Switching ◽  
Rapid Change ◽  
Electrical Characterization ◽  
Optical Switching Devices ◽  
The Impact ◽  
Orientation Of Molecules

In this work, different parameters of E7 liquid crystal (LC) have been calculated under the influence of an electric field in THz frequency. The E7 LC parameters have positive as well as negative values of order parameter and birefringence under the influence for an electric field. The director angle of E7 LC shows fast fluctuations above the angle θ=45° and due to rapid change in the orientation of molecules, fast electro-optical switching devices based on E7 LC can be designed. The refractive index of the E7 LC maintains stability in THz frequency.

Electrical Characterization of Al2O3 - SiO2 Mos Structures

1999 ◽  
Vol 567 ◽  
Author(s):  
L-Å Ragnarsson ◽  
E. Aderstedt ◽  
P. Lundgren
Keyword(s):  
Electrical Characterization ◽  
Thickness Reduction ◽  
Initial Thickness ◽  
Equivalent Thickness ◽  
Conventional Furnace ◽  
Capacitance Voltage ◽  
Layered Dielectric ◽  
The Impact ◽  
Mos Structures

ABSTRACTA comparative capacitance voltage method is used to investigate the equivalent thickness reduction during post metallization annealing of thermally grown ultrathin (∼15-27 Å) oxides. It is found that a double layered dielectric consisting of a thin Al2O3—SiO2 sandwich is appropriate to describe both the increased capacitance and the nearly unaltered current after anneal. It is further shown that the impact of initial thickness and method of growth — in a conventional furnace or by rapid thermal oxidation — on the equivalent thickness reduction is negligible.

Electrical characterization of the Macusanite volcanic glass and influence of nuclear fission tracks on electrical conductivity

2020 ◽  
Vol 176 ◽  
pp. 108988
Author(s):  
Vinicius Jessé Rodrigues de Oliveira ◽  
Luiz Augusto Stuani Pereira ◽  
Edilene Assunção da Silva ◽  
Carlos Alberto Tello Sáenz ◽  
Clarissa de Almeida Olivati
Keyword(s):  
Electrical Conductivity ◽  
Electrical Characterization ◽  
Volcanic Glass ◽  
Nuclear Fission ◽  
Fission Tracks

OLIN BRASS ALLOY C10200

Alloy Digest ◽  
2020 ◽  
Vol 69 (1) ◽  
Keyword(s):  
Electrical Conductivity ◽  
Corrosion Resistance ◽  
Hydrogen Embrittlement ◽  
Physical Properties ◽  
Elevated Temperatures ◽  
High Conductivity ◽  
High Electrical Conductivity ◽  
Brass Alloy

Abstract Olin Brass Alloy C10200 is an oxygen-free, high-conductivity copper. It is ideal for applications where extremely high electrical conductivity and resistance to hydrogen embrittlement are vital. Where glass-to-metal seals are required this material also provides the added advantage of developing an adherent, nonscaling oxide at elevated temperatures. This datasheet provides information on composition and physical properties. It also includes information on corrosion resistance. Filing Code: Cu-903. Producer or source: Olin Brass GBC Metals, LLC.

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

2014 ◽  
Vol 806 ◽  
pp. 143-147
Author(s):  
P. Fiorenza ◽  
Marilena Vivona ◽  
L.K. Swanson ◽  
Filippo Giannazzo ◽  
C. Bongiorno ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cross Sectional ◽  
Direct Demonstration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
N Incorporation ◽  
The Impact ◽  
Post Deposition ◽  
Partial Compensation

In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) to the conventional capacitance-voltage (C-V) and current-voltage (I-V) measurements on MOS-based devices. A significant reduction of the interface states density (from 1.8×1012 to 5.7×1011 cm-2eV-1) and, correspondingly, an increase in the carrier mobility (from 19 to 108 cm2V-1s-1) was found moving from N2O to POCl3 annealing. Furthermore, SSRM measurements on bare p+-type SiC regions selectively exposed to N2O and POCl3 at high temperature provided the direct demonstration of the incorporation of N or P-related donors in the SiC surface, leading to a partial compensation of substrate acceptors during N2O treatment and to an overcompensation during POCl3 annealing. Finally, cross-sectional SCM profiles performed on epitaxial n-doped 4H-SiC with 45 nm SiO2 (subjected to post deposition annealing in the two ambients) allowed to quantify the active donors concentrations associated to P or N incorporation under the gate oxide, showing almost a factor of ten higher doping (4.5×1018cm-3 vs 5×1017cm-3) in the case of P related donors.

scholarly journals Evaluation of the impact of gold mining activities on the waters and sediments of Lom River, Wakaso, Cameroon and the restorative effect of Moringa Oleifera seeds

2021 ◽  
Vol 11 (7) ◽  
Author(s):  
Mouhamed Ayiwouo Ngounouno ◽  
Luc Leroy Mambou Ngueyep ◽  
Sifeu Takougang Kingni ◽  
Sirri Neba Nforsoh ◽  
Ismaila Ngounouno
Keyword(s):  
Heavy Metals ◽  
Electrical Conductivity ◽  
Gold Mining ◽  
Moringa Oleifera ◽  
Suspended Solids ◽  
Physicochemical Characterization ◽  
Mining Activities ◽  
The Impact ◽  
Maximum Removal

AbstractThe impact of gold mining activities on the Lom River in Wakaso (Adamawa Cameroon) and the potential of Moringa Oleifera seeds for the removal of pollutants from wastewater is evaluated on this paper. Water samples were collected for physicochemical (hydrogen potential, electrical conductivity, turbidity and suspended solids) and chemical (major ions and heavy metals) analyses. To evaluate the effect of mining activities on waters and sediments, a combination of multivariate statistical analysis (MSA) and methods to assess the sediment quality was used. The restorative effect of Moringa oleifera seeds was studied with the determination of the maximum removal efficiencies and the maximum adsorption capacities. The results of the physicochemical characterization of waters showed that these waters were slightly acidic to slightly basic (6.12–8.12), weakly conductive (185.8–584.1 μS cm−1), turbid (345–801NTU) and had high content of suspended solids (167–700 mg L−1). The average concentrations of studied heavy metals (Ni, Cd, Fe, Mn, As and Hg) in waters exceeded the limits recommended by the World Health Organization (WHO) standards. Physicochemical characterization of sediments revealed that they were acidic to neutral (5.95–6.80) and organic matter (OM) content ranged from 11.11 to 15.78%. The concentrations of studied trace metals (Ni, Cd, Fe, Hg, Mn and As) in sediments were below the limits recommended by the WHO except for Cd and Hg. The study of the capacity of Moringa oleifera seeds to remove pollutants in waters showed that 54% of the electrical conductivity, 80% of turbidity and 94% of suspended solids were reduced. The maximum removal efficiency of 91.66, 92.30 and 24.48 and the maximum adsorption capacity of 2.4, 2.6 and 16.6 mg g−1were observed for Cd (II), Hg (II) and Fe (II), respectively. Thus, the Moringa oleifera seeds which are locally available natural bio-adsorbent exhibit attractive property to treat wastewater.

Electrical characterization of TSVs with varying process knobs and temporary bond/adhesive system robustness studies for 2.5D/3D manufacturing

2013 ◽  
Vol 2013 (1) ◽  
pp. 000233-000233
Author(s):  
Niranjan Kumar
Keyword(s):  
Electrical Parameter ◽  
Electrical Characterization ◽  
Adhesive System ◽  
Parameter Extraction ◽  
Electrical Performance ◽  
Process Window ◽  
Film Properties ◽  
Wafer Processing ◽  
The Impact

TSVs are used to carry power/ground and signals straight to the heart of the logic/memory devices where all the intricate and busy architectures lie. I consider it like the downtown area inside a city where the real estate is more expensive and requires intricate design and execution. As a result in case of the TSVs, there is no room for electrical degradation and stress interaction with transistor devices (keep out zone). The Cu protrusion, it's interaction with the intricate local interconnects (M1 and below structures), the current leakage, capacitance, reliability, become highly critical to fully achieve the power per watt advantage of the TSVs. As a result, a thorough electrical characterization of TSVs with varying film properties and the process window becomes very critical for integration with the 20nm node (and below) devices. In this paper we will discuss implementation of modified oxide liner, barrier/seed, ECD fill and CMP of films to achieve robust TSVs for electrical parameter extraction. We will closely examine the impact of these film properties on the electrical performance and its repeatability to achieve wide process windows. Such studies are expected to improve manufacturing yields of TSV product wafers at fabs/foundries. Alternately, we will present detailed metrology studies of two temporary bond method/adhesive systems as it progresses through the thin wafer downstream processes (via-reveal processes). This exercise is targeted to address productivity and yield challenges with thin wafer processing (backside via-reveal process). We will attempt to demonstrate a robust temporary bond/adhesive system that exhibits no thin wafer damage/wrinkling and no edge profile degradation issues over repeated runs (production like). This study will help to characterize the adhesive and low temperature passivation film interfaces in details to support the thin wafer processing robustness for TSV manufacturing.

ANSONIA ALLOY C 18150

Alloy Digest ◽  
2013 ◽  
Vol 62 (12) ◽  
Keyword(s):  
Electrical Conductivity ◽  
Physical Properties ◽  
Tensile Properties ◽  
Copper Alloy ◽  
Elevated Temperatures ◽  
Heat Treating ◽  
High Electrical Conductivity

Abstract Ansonia alloy ACB C18150 is an age-hardenable zirconium chromium copper alloy with high electrical conductivity, hardness, and ductility; moderate strength; and excellent resistance to softening at elevated temperatures. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on forming, heat treating, machining, and joining. Filing Code: Cu-828. Producer or source: Ansonia Copper & Brass Inc..

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