Chemical vapor growth and delamination of α-RuCl3 nanosheets down to the monolayer limit

Nanoscale ◽  
2018 ◽  
Vol 10 (40) ◽  
pp. 19014-19022 ◽  
Author(s):  
Martin Grönke ◽  
Peer Schmidt ◽  
Martin Valldor ◽  
Steffen Oswald ◽  
Daniel Wolf ◽  
...  

This work demonstrates an elegant way to synthesize α-RuCl3 nanosheets down to the monolayer limit by chemical vapor transport and subsequent delamination techniques.

2002 ◽  
Vol 744 ◽  
Author(s):  
G.A. Verozubova ◽  
A. I. Gribenyukov ◽  
M.C. Ohmer ◽  
N.C. Fernelius ◽  
J.T. Goldstein

ABSTRACTThermodynamic analysis of the vapor phase over ZnGeP2 in Zn-Ge-P-Cl system has been carried out. The analysis showed that this system can be used for the vapor growth of ZnGeP2. Homoepitaxial layers of ZnGeP2 were grown in a closed system using chemical vapor transport. Electrical and photoluminescence properties of the layers were studied, and crystal lattice parameters were measured. Comparison of properties for bulk and vapor grown ZnGeP2 crystals were carried out. It was found that the vapor grown crystals have more perfect structure than the bulk ones, particularly, they have significantly lower vacancy concentration.


2005 ◽  
Vol 475-479 ◽  
pp. 1689-1692
Author(s):  
Huan Yong Li ◽  
Ke Wei Xu ◽  
Wan Qi Jie

Two chemical vapor transport methods with Zn(NH4)3Cl5 transport agent were developed to grow ZnSe bulk single crystals. Two kinds of Zn-rich ZnSe single crystals, conical crystal and flake crystal,were grown directly from untreated ZnSe polycrystals and two elements, respectively. The structure characters, purity and etch pit density were studied by rotating orientation XRD, PL spectrum and optical microscope. The contrastive investigation between two growth results indicated that the conical crystal was composed of (111) and (100) faces, and the flake crystal exhibited only (111) face. Moreover, the vicinal interface leaning to (111) face by the angle of 3.1° was the dominative growth face in vapor growth system, and growth occurs by layer-by-layer model. FWHM of RO-XRD pattern of ZnSe (111) face was 24sec for conical ZnSe crystal and 48s for ZnSe flake crystal. The results suggested that high-quality ZnSe crystals can be grown from the chemical vapor transport method with Zn(NH4)3Cl5 transport agent.


2002 ◽  
Vol 719 ◽  
Author(s):  
K. Thonke ◽  
N. Kerwien ◽  
A. Wysmolek ◽  
M. Potemski ◽  
A. Waag ◽  
...  

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.


2021 ◽  
Vol 40 (1) ◽  
pp. 171-177
Author(s):  
Yue Wang ◽  
Ben Fu Long ◽  
Chun Yu Liu ◽  
Gao An Lin

Abstract Herein, the evolution of reduction process of ultrafine tungsten powder in industrial conditions was investigated. The transition process of morphology and composition was examined via SEM, XRD, and calcination experiments. The results show that the reduction sequence of WO2.9 was WO2.9 → WO2.72 → WO2 → W on the surface, but WO2.9 → WO2 → W inside the oxide particles. With the aid of chemical vapor transport of WO x (OH) y , surface morphology transformed into rod-like, star-shaped cracking, floret, irregularly fibrous structure, and finally, spherical tungsten particles.


Author(s):  
Liang Fang ◽  
Yanping Xie ◽  
Peiyin Guo ◽  
Jingpei Zhu ◽  
Shuhui Xiao ◽  
...  

Vertical NiPS3 nanosheets in situ grown on conducting nickel foam were fabricated by a facile one-step chemical vapor transport method and used as an efficient bifunctional catalyst for overall water splitting.


ChemInform ◽  
2005 ◽  
Vol 36 (44) ◽  
Author(s):  
Udo Steiner ◽  
Werner Reichelt

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