In situ chemical probing of hole defects and cracks in graphene at room temperature

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 11052-11063 ◽  
Author(s):  
Ali I. Altan ◽  
Jian Chen
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Copper Substrate ◽  
Phase Reaction ◽  
Vacancy Defects ◽  
Gas Phase Reaction ◽  
Chemical Probing ◽  
Hole Defects ◽  
Grown Graphene

The vacancy defects in CVD-grown graphene can be visualized under SEM after the solid–gas phase reaction between H2S gas and exposed copper substrate in the air at room temperature.

In situ analysis of gas phase reaction processes within monolithic catalyst supports by applying NMR imaging methods

2016 ◽  
Vol 273 ◽  
pp. 91-98 ◽  
Author(s):  
Jürgen Ulpts ◽  
Wolfgang Dreher ◽  
Lars Kiewidt ◽  
Miriam Schubert ◽  
Jorg Thöming
Keyword(s):  
Gas Phase ◽  
In Situ Analysis ◽  
Catalyst Supports ◽  
Nmr Imaging ◽  
Phase Reaction ◽  
Imaging Methods ◽  
Monolithic Catalyst ◽  
Gas Phase Reaction ◽  
Reaction Processes

scholarly journals Direct and relative rate coefficients for the gas-phase reaction of OH radicals with 2-methyltetrahydrofuran at room temperature

2016 ◽  
Vol 119 (1) ◽  
pp. 5-18
Author(s):  
Ádám Illés ◽  
Mária Farkas ◽  
Gábor László Zügner ◽  
Gyula Novodárszki ◽  
Magdolna Mihályi ◽  
...  
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Relative Rate ◽  
Rate Coefficients ◽  
Oh Radicals ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Relative Rate Coefficients

Kinetics of the Reaction HOCO + O2 in the Gas Phase

1993 ◽  
Vol 48 (12) ◽  
pp. 1234-1238 ◽  
Author(s):  
J. Nolte ◽  
J. Grußdorf ◽  
F. Temps ◽  
H. Gg. Wagner
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Far Infrared ◽  
Main Reaction ◽  
Phase Reaction ◽  
Time Decay ◽  
Large Excess ◽  
Measured Concentration ◽  
Gas Phase Reaction ◽  
Kinetics Of

Using the discharge flow method, the kinetics of the gas phase reactionHOCO + O2 products (1)was investigated at room temperature and pressures around p ≈ 2.0 mbar with Far Infrared LaserMagnetic Resonance (FIR-LMR) detection of HOCO, HO2 , and OH. From the measured concentration-versus-time decay profiles of HOCO in the absence and presence of a large excess of O2 , theoverall rate constant of the reaction was found to bek1 (296 K) = (9.9 ±1.5) • 1011 cm3/mol • s.The main reaction channel, which leads to production of HO2 + CO2 , could be established.

In-Situ Transmission Elecron Microscopy (TEM) Study of the Sintering of Sputtered Copper Nanoparticles on (001) Copper

1997 ◽  
Vol 3 (S2) ◽  
pp. 401-402
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.W. Bullard ◽  
D.L. Olynick ◽  
...  
Keyword(s):  
Gas Phase ◽  
Copper Nanoparticles ◽  
Room Temperature ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Single Particles ◽  
Fine Grain ◽  
Structural And Electrical Properties ◽  
Nanophase Materials

The large surface area: volume ratios and fine grain size of nanophase materials give rise to novel and exciting structural and electrical properties that are of considerable scientific and technological interest. Using copper as a model system we have investigated the sintering of sputtered copper nanoparticles (4-20nm diameter) with a copper substrate in a novel UHV in-situ TEM.The nanoparticles were generated in a UHV chamber built into the side of the column by sputtering in 1.5Torr Ar. They were transported into the microscope in the gas phase and deposited on an electron transparent (001) copper foil mounted on a heated support. A typical bright-field (BF) image of the sample immediately after deposition at room temperature is shown in Fig. 1. The particles have assumed a random orientation on the substrate and remain stable for many hours at room temperature. The presence of both single particles and agglomerates of particles is evident in this image and examples are labelled ‘P’ and ‘A’, respectively

Gas-phase reaction of tungsten dimer with NH3 and C2H4 at room temperature

2002 ◽  
Vol 352 (3-4) ◽  
pp. 209-212 ◽  
Author(s):  
Yo-ichi Ishikawa ◽  
Yoshitaka Matsumoto
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Phase Reaction ◽  
Gas Phase Reaction

Effect of pressure on the gas-phase chemistry when using monomethylsilane and dimethylsilane in hot-wire chemical vapor deposition

2015 ◽  
Vol 93 (1) ◽  
pp. 82-90 ◽  
Author(s):  
Rim Toukabri ◽  
Yujun Shi
Keyword(s):  
Free Radical ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Reaction ◽  
Hot Wire ◽  
Gas Phase Reaction ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

The effect of source gas pressure on the gas-phase reaction chemistry of dimethylsilane (DMS) and monomethylsilane (MMS) in the hot-wire chemical vapor deposition process has been studied by examining the secondary gas-phase reaction products in a reactor using a soft laser ionization source coupled with mass spectrometry. For DMS, the increase in sample pressure has resulted in the formation of small hydrocarbons, including ethene, acetylene, propene, and propyne. This leads to a switch from silylene dominant chemistry to a free radical dominant one with the pressure increase at low filament temperatures of 1200 and 1300 °C. At the lower pressure of 0.12 Torr, the formation of 1,1,2,2-tetramethyldisilane by dimethylsilylene insertion reaction into the Si–H bond in DMS is favored over trimethylsilane produced from a free radical recombination reaction for a short reaction time. However, when the pressure is increased by 10 times, the gas-phase chemistry becomes dominated by the formation of trimethylsilane. We have demonstrated that trapping of the corresponding active intermediates by the small hydrocarbons produced in situ is responsible for the observed switch. In the study with MMS, the gas-phase chemistry is dominated by the formation of 1,2-dimethyldisilane and 1,3-disilacyclobutane at both pressures of 0.48 and 1.2 Torr. Unlike DMS, the gas-phase reaction chemistry with MMS does not involve free radicals, which are the precursors to produce small hydrocarbons. The absence of small hydrocarbons formed in situ with MMS explains the preservation in chemistry upon the increase in pressure when MMS is used as a source gas.

In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD

2006 ◽  
Vol 498 (1-2) ◽  
pp. 277-281 ◽  
Author(s):  
Gouji Asano ◽  
Tsukasa Satake ◽  
Kunio Ohtsuki ◽  
Hiroshi Funakubo
Keyword(s):  
Gas Phase ◽  
Phase Reaction ◽  
In Situ Ftir ◽  
Gas Phase Reaction ◽  
Ftir Investigation
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