Ultrathin tellurium dioxide: emerging direct bandgap semiconductor with high-mobility transport anisotropy

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8397-8403 ◽  
Author(s):  
Shiying Guo ◽  
Zhen Zhu ◽  
Xuemin Hu ◽  
Wenhan Zhou ◽  
Xiufeng Song ◽  
...  
Keyword(s):  
Band Gap ◽  
Power Electronics ◽  
Short Wavelength ◽  
High Mobility ◽  
Hole Mobility ◽  
Tellurium Dioxide ◽  
Direct Bandgap ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Ultrathin TeO2exhibits a wide direct band-gap and high hole mobility for both power electronics and short-wavelength optoelectronic applications.

scholarly journals Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

2012 ◽  
Vol 18 (S5) ◽  
pp. 121-122 ◽  
Author(s):  
J. Bartolomé ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras
Keyword(s):  
Solar Cell ◽  
Band Gap ◽  
Material Properties ◽  
Room Temperature ◽  
High Efficiency ◽  
Processing Parameters ◽  
Indium Sulfide ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

scholarly journals DFT Study on Structural, Electronic and Optical Properties of Ag-Doped SrTiO3 Perovskite for Optoelectronic Applications

2021 ◽  
Author(s):  
Jalil Rehman ◽  
M.Awais Rehman ◽  
Muhammad Bilal Tahir ◽  
Muhammad Usman ◽  
Faisal Iqbal
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Density Of States ◽  
Density Functional ◽  
Partial Density ◽  
Electronic Band ◽  
Ag Doping ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications

This study addresses the first-principles analysis using generalized gradient approximation (GGA), which is pillared on density functional theory (DFT), to find the effects of silver (Ag) doping on SrTiO3 structurally, electronically and optical properties. As Ag doping into SrTiO3, we see a small decrease in the volume of unit cell. Moreover, Ag-doping adds new states in SrTiO3 at Brillouin zone symmetry points, transferring host material’s indirect band gap to a direct band gap. Ag doping in SrTiO3 results in the transfer density of states to smaller energies and increase in interaction among Ag atom and its surrounding atoms. Moreover, at the conduction band, the partial density of states (PDOS) of SrTiO3 changes generally. As a result, we conclude that Ag doping has an effect on the electronic band structure of SrTiO3. SrTiO3 doping with Ag has improved optical properties and its ability of converting to direct band gap results it in a perfect choice for optoelectronic applications.

Elemental Se: fundamentals and its optoelectronic applications

2019 ◽  
Vol 7 (8) ◽  
pp. 2199-2206 ◽  
Author(s):  
Menghua Zhu ◽  
Guangda Niu ◽  
Jiang Tang
Keyword(s):  
Melting Point ◽  
Band Gap ◽  
Elemental Selenium ◽  
Direct Band Gap ◽  
Direct Band ◽  
Optoelectronic Applications ◽  
Photovoltaic Material

Elemental selenium (Se), as the oldest photovoltaic material, has many advantages such as a direct band gap, earth-abundance, simple composition, nontoxicity, and a low melting point for optoelectronic applications.

scholarly journals Prediction of Green Phosphorus with Tunable Direct Band Gap and High Mobility

2017 ◽  
Vol 8 (18) ◽  
pp. 4627-4632 ◽  
Author(s):  
Woo Hyun Han ◽  
Sunghyun Kim ◽  
In-Ho Lee ◽  
Kee Joo Chang
Keyword(s):  
Band Gap ◽  
High Mobility ◽  
Direct Band Gap ◽  
Direct Band

Spontaneous Direct Band Gap, High Hole Mobility, and Huge Exciton Energy in Atomic-Thin TiO2 Nanosheet

2018 ◽  
Vol 30 (18) ◽  
pp. 6449-6457 ◽  
Author(s):  
Wei Zhou ◽  
Naoto Umezawa ◽  
Renzhi Ma ◽  
Nobuyuki Sakai ◽  
Yasuo Ebina ◽  
...  
Keyword(s):  
Band Gap ◽  
Hole Mobility ◽  
Exciton Energy ◽  
Direct Band Gap ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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