Interface-induced nucleation and growth: a new route for fabricating ordered silver nanohole arrays

Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 14039-14046 ◽  
Author(s):  
Zewen Zuo ◽  
Yibing Wen ◽  
Sheng Zhang
Keyword(s):  
Optical Properties ◽  
Nucleation And Growth ◽  
Large Area ◽  
Nanohole Arrays

An interface-induced growth route was developed to prepare large-area metal nanohole arrays with regulable structure and optical properties.

Synthesis of Graphene-ZnO Heterogeneous Nanostructures by Chemical Vapor Deposition

2011 ◽  
Vol 1348 ◽  
Author(s):  
Jian Lin ◽  
Miroslav Penchev ◽  
Guoping Wang ◽  
Rajat K Paul ◽  
Jiebin Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Building Blocks ◽  
Zno Nanostructures ◽  
Large Area ◽  
Graphene Layers

ABSTRACTIn this work, we report the synthesis and characterization of three dimensional heterostructures graphene nanostructures (HGN) comprising continuous large area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition. Characterization of large area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy indicates that the CVD grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO based HGN provides unique characteristics for opportunities in future optoelectronic devices.

Porous and Nanoporous Semiconductors and Emerging Applications

2005 ◽  
Vol 876 ◽  
Author(s):  
Helmut Föll ◽  
Jürgen Carstensen ◽  
Stefan Frey
Keyword(s):  
Optical Properties ◽  
Fuel Cells ◽  
Pore Formation ◽  
Large Area ◽  
Paper Briefly ◽  
High Explosives ◽  
Single Crystalline ◽  
Natural Materials ◽  
Porous Semiconductors ◽  
Wide Range

AbstractPores in single crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nano” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with e.g. optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, e.g. high explosives or electrodes for micro fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching), properties of porous semiconductors and emerging applications.

Optical Properties and Local Electromagnetic Field Enhancement of Periodic Rectangular Nanohole Arrays in Au-Interlayer-Au Multilayer Films

Plasmonics ◽  
2016 ◽  
Vol 12 (6) ◽  
pp. 1929-1937 ◽  
Author(s):  
Zao Yi ◽  
Miao Liu ◽  
Jiangshan Luo ◽  
Xibin Xu ◽  
Weibin Zhang ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Optical Properties ◽  
Field Enhancement ◽  
Multilayer Films ◽  
Nanohole Arrays

Large-area gold nanohole arrays fabricated by one-step method for surface plasmon resonance biochemical sensing

2018 ◽  
Vol 61 (4) ◽  
pp. 476-482 ◽  
Author(s):  
Huijie Qi ◽  
Lihong Niu ◽  
Jie Zhang ◽  
Jian Chen ◽  
Shujie Wang ◽  
...  
Keyword(s):  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Large Area ◽  
Step Method ◽  
Biochemical Sensing ◽  
Nanohole Arrays ◽  
One Step

Optical Properties of Nanohole Arrays in Metal–Dielectric Double Films Prepared by Mask-on-Metal Colloidal Lithography

ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 10405-10415 ◽  
Author(s):  
Juliane Junesch ◽  
Takumi Sannomiya ◽  
Andreas B. Dahlin
Keyword(s):  
Optical Properties ◽  
Colloidal Lithography ◽  
Nanohole Arrays

Advances in the growth and characterization of Ge quantum dots and islands

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties ◽  
Ge Quantum Dots

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Crystal Structure and Optical Properties of Al-Doped ZnO Large-Area Thin Films Using 1500 mm Dual Cylindrical Cathodes

2015 ◽  
Vol 15 (11) ◽  
pp. 8370-8374
Author(s):  
JinJu Lee ◽  
Jong-Yoon Ha ◽  
Haena Yim ◽  
Won-Kook Choi ◽  
Ji-Won Choi
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Optical Properties ◽  
Large Area ◽  
Doped Zno

Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 77-80 ◽  
Author(s):  
Dominik Rankl ◽  
Valdas Jokubavicius ◽  
Mikael Syväjärvi ◽  
Peter J. Wellmann
Keyword(s):  
Gas Phase ◽  
Nucleation And Growth ◽  
Vapor Transport ◽  
Quasi Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Large Area ◽  
X Ray ◽  
Thermodynamic Conditions ◽  
Sublimation Growth

We have investigated the growth of 3C-SiC using sublimation growth in the temperature range from 1800°C to 1950°C. The supersaturation was determined using numerical modeling of the temperature field and gas phase composition by applying quasi-equilibrium thermodynamic conditions. Analysis of the 3C-SiC yield was carried out by optical microscopy, optical absorption, Raman spectroscopy and x-ray analysis. Quantitative data on supersaturation are compared with most stable 3C-SiC nucleation and growth condition. Finally the application to large area growth in a physical vapor transport growth reactor is briefly addressed.

Synthesis and Optical Properties of Large-Area Single-Crystalline 2D Semiconductor WS2Monolayer from Chemical Vapor Deposition

2013 ◽  
Vol 2 (2) ◽  
pp. 131-136 ◽  
Author(s):  
Chunxiao Cong ◽  
Jingzhi Shang ◽  
Xing Wu ◽  
Bingchen Cao ◽  
Namphung Peimyoo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Area ◽  
Single Crystalline
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