A tetrathiafulvalene vinylogue-based double-layer polymer thin film as a highly sensitive and selective TNT sensor

2019 ◽  
Vol 43 (14) ◽  
pp. 5277-5281 ◽  
Author(s):  
Farshid Shahrokhi ◽  
Yuming Zhao

A double-layer redox-active polymer thin film acts as a highly efficient TNT electrochemical sensor.

2017 ◽  
Vol 89 (23) ◽  
pp. 12756-12763 ◽  
Author(s):  
Balwinder Kaur ◽  
Cristiane Andreia Erdmann ◽  
Mathias Daniëls ◽  
Wim Dehaen ◽  
Zbigniew Rafiński ◽  
...  

2008 ◽  
Vol 6 (2) ◽  
pp. 290-293 ◽  
Author(s):  
Mamtimin Mahmut ◽  
Abliz Yimit ◽  
Abdukadir Abudukayum ◽  
Mariya Mamut ◽  
Kiminori Itoh

2021 ◽  
Vol 2070 (1) ◽  
pp. 012040
Author(s):  
Nidhi Yadav ◽  
Nikita Kumari ◽  
Yoshito Ando ◽  
Shyam S Pandey ◽  
Vipul Singh

Abstract Organic phototransistors (OPTs) play a crucial role in various light sensing and imaging applications. In this work, we have fabricated highly sensitive Poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b’]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT)/[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blended thin film based OPTs using ribbon-floating film transfer method. A high charge carrier mobility (μ) of 0.002 cm2V−1s−1 and an Ion/Ioff of 6 × 104 was showcased by the blended polymer thin film based OPT as compared to its pristine polymer thin film based counterpart which had a μ of 0.001 cm2V− 1s−1 and an Ion/Ioff of 9 × 103. Further, the blended polymer thin film based OPT demonstrated a high photosensitivity of 6.6 × 103 and a photoresponsivity of 0.13 A/W towards white light which were much superior than those of many of the previously reported polymer thin film based OPTs. The results hold crucial significance towards the development of cost effective blended polymer thin film based OPTs.


2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maximilian Krause ◽  
Aleksandra Nikolaeva ◽  
Matthias Maiberg ◽  
Philip Jackson ◽  
Dimitrios Hariskos ◽  
...  

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