Field-effect transistor array modified by a stationary phase to generate informative signal patterns for machine learning-assisted recognition of gas-phase chemicals

2019 ◽  
Vol 4 (2) ◽  
pp. 386-389
Author(s):  
Toshihiro Yoshizumi ◽  
Tatsuro Goda ◽  
Rui Yatabe ◽  
Akio Oki ◽  
Akira Matsumoto ◽  
...  
Keyword(s):  
Machine Learning ◽  
Stationary Phase ◽  
Gas Phase ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Machine Learning Techniques ◽  
Informative Signal ◽  
Sensing System ◽  
Learning Techniques ◽  
Effect Transistor

We propose an artificial intelligence-based chemical-sensing system integrating a porous gate field-effect transistor (PGFET) array modified by gas chromatography stationary phase materials and machine-learning techniques.

scholarly journals Graphene based field-effect transistor biosensors functionalized using gas-phase synthesized gold nanoparticles

2020 ◽  
Vol 320 ◽  
pp. 128432 ◽  
Author(s):  
Eric Danielson ◽  
Vyankat A. Sontakke ◽  
Alexander J. Porkovich ◽  
Zhenwei Wang ◽  
Pawan Kumar ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Gas Phase ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

On a heterostructure field-effect transistor (HFET) based hydrogen sensing system

2011 ◽  
Vol 36 (24) ◽  
pp. 15906-15912 ◽  
Author(s):  
Chi-Shiang Hsu ◽  
Kun-Wei Lin ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chien-Cheng Huang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Sensing ◽  
Sensing System ◽  
Effect Transistor

scholarly journals XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Вертикальный полевой транзистор с управляющим p-n-переходом на основе GaAs

2019 ◽  
Vol 53 (10) ◽  
pp. 1311
Author(s):  
Н.В. Востоков ◽  
В.М. Данильцев ◽  
С.А. Краев ◽  
В.Л. Крюков ◽  
Е.В. Скороходов ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Technological Feature ◽  
Transistor Structure ◽  
First Results ◽  
Effect Transistor

The first results on the creation of an original power GaAs field-effect transistor with a vertical channel controlled by the p-n junction are presented. The main technological feature is the use of two separate processes of epitaxial growth in the formation of the transistor structure. The part of the transistor containing the drain, drift and gate areas is grown by liquid-phase epitaxy. The technology of organometallic gas-phase epitaxy is used to form the areas of the channel and the source.

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