Facile and eco-friendly extraction of cellulose nanocrystalsviaelectron beam irradiation followed by high-pressure homogenization

2018 ◽  
Vol 20 (11) ◽  
pp. 2596-2610 ◽  
Author(s):  
Minwoo Lee ◽  
Min Haeng Heo ◽  
Hyunho Lee ◽  
Hwi-Hui Lee ◽  
Haemin Jeong ◽  
...  

Cellulose nanocrystals were preparedviashort-time pretreatment by electron-beam irradiation in the solid state and disintegration using high pressure homogenization.

2001 ◽  
Vol 16 (2) ◽  
pp. 553-557 ◽  
Author(s):  
Kazuya Oguri ◽  
Nobuhiro Iwataka ◽  
Akira Tonegawa ◽  
Yoichi Hirose ◽  
Kazuo Takayama ◽  
...  

We developed a diamond surface that does not mist near the room temperature under a saturated humidity atmosphere, by sheet electron beam irradiation (SEBI) treatment. SEBI treatment decreased the time to clear vision of the diamond surface. Following SEBI treatment for 1.91 s (= 0.72 MGy) to a diamond surface, the time to clear vision was less than 2 s. The effective duration time was a few hours. Based on the results of the size distribution of the drops on the misting-free diamond surface following blowing for 3 s, we proposed an explanation for the short time to clear vision of the diamond surface treated by SEBI.


AIP Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 095304 ◽  
Author(s):  
P. V. Borisyuk ◽  
O. S. Vasilyev ◽  
Y. Y. Lebedinskii ◽  
A. V. Krasavin ◽  
E. V. Tkalya ◽  
...  

2021 ◽  
Vol 5 (3) ◽  
pp. 23
Author(s):  
Shun-Ichiro Tanaka

I have proposed a bottom-up technology utilising irradiation with active beams, such as electrons and ions, to achieve nanostructures with a size of 3–40 nm. This can be used as a nanotechnology that provides the desired structures, materials, and phases at desired positions. Electron beam irradiation of metastable θ-Al2O3, more than 1019 e/cm2s in a transmission electron microscope (TEM), enables the production of oxide-free Al nanoparticles, which can be manipulated to undergo migration, bonding, rotation, revolution, and embedding. The manipulations are facilitated by momentum transfer from electrons to nanoparticles, which takes advantage of the spiral trajectory of the electron beam in the magnetic field of the TEM pole piece. Furthermore, onion-like fullerenes and intercalated structures on amorphous carbon films are induced through catalytic reactions. δ-, θ-Al2O3 ball/wire hybrid nanostructures were obtained in a short time using an electron irradiation flashing mode that switches between 1019 and 1022 e/cm2s. Various α-Al2O3 nanostructures, such as encapsulated nanoballs or nanorods, are also produced. In addition, the preparation or control of Pt, W, and Cu nanoparticles can be achieved by electron beam irradiation with a higher intensity.


Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.


Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.


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