scholarly journals Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films

2018 ◽  
Vol 47 (32) ◽  
pp. 10897-10905 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Titanium Carbonitride ◽  
Layer Deposition ◽  
Amine Ligands

Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD).

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

Aluminum Dihydride Complexes and their Unexpected Application in Atomic Layer Deposition of Titanium Carbonitride Films

2018 ◽  
Author(s):  
Kyle J. Blakeney ◽  
Philip D. Martin ◽  
Charles H. Winter
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
High Growth ◽  
Atomic Layer ◽  
Grazing Incidence ◽  
High Growth Rate ◽  
Titanium Carbonitride ◽  
X Ray ◽  
Layer Deposition

<p>Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>) are more thermally stable than common Al hydride thin film precursors such as AlH<sub>3</sub>(NMe<sub>3</sub>). ALD film growth experiments using TiCl<sub>4</sub> and AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å/cycle and resistivities around 600 μΩ·cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3 % of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC<sub>0.8</sub>N<sub>0.5</sub> at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NMe<sub>2</sub>), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH<sub>2</sub>(tBuNCH<sub>2</sub>CH<sub>2</sub>NC<sub>4</sub>H<sub>8</sub>). </p>

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition
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