Oxygen vacancy-rich MoO3−x nanobelts for photocatalytic N2 reduction to NH3 in pure water

2019 ◽  
Vol 9 (3) ◽  
pp. 803-810 ◽  
Author(s):  
Yehuan Li ◽  
Xin Chen ◽  
Mingjian Zhang ◽  
Yuanmin Zhu ◽  
Wenju Ren ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Pure Water ◽  
Green Strategy

Photocatalytic nitrogen fixation is a promising sustainable and green strategy for NH3 synthesis.

Efficient photocatalytic nitrogen fixation under ambient conditions enabled by the heterojunctions of n-type Bi2MoO6 and oxygen-vacancy-rich p-type BiOBr

Nanoscale ◽  
2019 ◽  
Vol 11 (21) ◽  
pp. 10439-10445 ◽  
Author(s):  
Xiaolan Xue ◽  
Renpeng Chen ◽  
Changzeng Yan ◽  
Yi Hu ◽  
Wenjun Zhang ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Ambient Conditions ◽  
Nitrogen Reduction ◽  
Photocatalytic Activities ◽  
P Type

Bi2MoO6/OV-BiOBr heterojunctions are synthesized and show good photocatalytic activities for nitrogen reduction to ammonia under ambient conditions.

scholarly journals Oxygen vacancy engineering in spinel-structured nanosheet wrapped hollow polyhedra for electrochemical nitrogen fixation under ambient conditions

2020 ◽  
Vol 8 (4) ◽  
pp. 1652-1659 ◽  
Author(s):  
Feili Lai ◽  
Jianrui Feng ◽  
Xiaobin Ye ◽  
Wei Zong ◽  
Guanjie He ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Ambient Conditions ◽  
Faradaic Efficiency ◽  
Structured Materials ◽  
Ammonia Conversion

Electrochemical nitrogen-to-ammonia conversion under ambient conditions is realized by an oxygen vacancy-rich spinel structured materials, showing relatively high faradaic efficiency and yields.

Oxygen vacancy engineering of calcium cobaltate: A nitrogen fixation electrocatalyst at ambient condition in neutral electrolyte

Nano Research ◽  
2020 ◽  
Vol 14 (2) ◽  
pp. 501-506 ◽  
Author(s):  
Xinyu Chen ◽  
Ke Li ◽  
Xiaoxuan Yang ◽  
Jiaqi Lv ◽  
Sai Sun ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Ambient Condition ◽  
Neutral Electrolyte ◽  
Calcium Cobaltate

Surface Plasmon Enabling Nitrogen Fixation in Pure Water through a Dissociative Mechanism under Mild Conditions

2019 ◽  
Vol 141 (19) ◽  
pp. 7807-7814 ◽  
Author(s):  
Canyu Hu ◽  
Xing Chen ◽  
Jianbo Jin ◽  
Yong Han ◽  
Shuangming Chen ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Surface Plasmon ◽  
Pure Water ◽  
Dissociative Mechanism ◽  
Mild Conditions

Oxygen-Vacancy Confined Uranium Single-Atom Over Titanium Dioxide Nanosheets for Efficient Nitrogen Fixation

2022 ◽  
Author(s):  
Tao Chen ◽  
Tong Liu ◽  
Beibei Pang ◽  
Tao Ding ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Single Atom

Photocatalytic nitrogen fixation: Oxygen vacancy modified novel micro-nanosheet structure Bi2O2CO3 with band gap engineering

2021 ◽  
Vol 583 ◽  
pp. 499-509 ◽  
Author(s):  
Yalan Feng ◽  
Zisheng Zhang ◽  
Kai Zhao ◽  
Shuanglong Lin ◽  
Hong Li ◽  
...  
Keyword(s):  
Nitrogen Fixation ◽  
Oxygen Vacancy ◽  
Band Gap ◽  
Band Gap Engineering

IMPROVEMENT ON CHARACTERISTICS OF FERROELECTRIC THIN FILMS USING SUPERCRITICAL CARBON DIOXIDE FLUID TREATMENT

2012 ◽  
Vol 06 ◽  
pp. 104-108
Author(s):  
CHIEN-MIN CHENG ◽  
MING-CHANG KUAN ◽  
KAI-HUNAG CHEN ◽  
JEN-HWAN TSAI
Keyword(s):  
Thin Films ◽  
Carbon Dioxide ◽  
Electrical Properties ◽  
Low Temperature ◽  
Supercritical Carbon Dioxide ◽  
Oxygen Vacancy ◽  
Current Density ◽  
Pure Water ◽  
Ferroelectric Thin Films ◽  
Supercritical Carbon

Electrical and physical properties of as-deposited Bi 3.9 La 0.1 Ti 2.9 V 0.1 O 12 (BLTV) ferroelectric thin films on SiO 2/ Si (100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited BLTV ferroelectric thin films were treated by SCF process which mixed with propyl alcohol and pure water. The memory windows increased in C-V curves, and the oxygen vacancy and defect in leakage current density curves were obtained after SCF process treatment. Finally, the improvement properties of as-deposited BLTV thin films after SCF process treatment were investigated by XPS, C-V, and J-E measurement. The mechanism concerning the dependence of electrical properties of the ferroelectric thin films on the SCF process was investigated and discussed.

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