scholarly journals Photoelectron spectroscopic study of I−·ICF3: a frontside attack SN2 pre-reaction complex

2019 ◽  
Vol 21 (26) ◽  
pp. 13977-13985 ◽  
Author(s):  
Golda Mensa-Bonsu ◽  
David J. Tozer ◽  
Jan R. R. Verlet
Keyword(s):  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Reaction Complex

The I−·ICF3 complex, a frontside attack pre-reaction complex of a classic SN2 reaction, is produced and studied using photoelectron spectroscopy.

An X-Ray Photoelectron Spectroscopic Study of Copper Chromite Catalysts

1979 ◽  
Vol 33 (4) ◽  
pp. 380-384 ◽  
Author(s):  
J. A. Schreifels ◽  
A. Rodero ◽  
W. E. Swartz
Keyword(s):  
Spectroscopic Study ◽  
Calcination Temperature ◽  
Photoelectron Spectroscopy ◽  
Copper Chromite ◽  
Oxidation States ◽  
Surface Species ◽  
Catalytic Surface ◽  
X Ray

A series of copper chromite catalysts have been studied by x-ray photoelectron spectroscopy. The data indicate that in the as-received form the copper is present as a mixture of Cu(OH)2 and CuO. After calcination at 500 °C only CuO is present. The chromium is present as Cr+3 and Cr+4 when no promoter is added. When a BaO promoter is added, the Cr+6 is stabilized. Calcination at 500°C for varying periods of time alter the relative amounts of Cr+3 and Cr+6 on the catalytic surface. In addition, the relative amounts of the various oxidation states are a function of calcination temperature. At a calcination temperature of 240°C a Cr+5 surface species is reproducibly observed in one of the catalysts.

Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H

1990 ◽  
Vol 209 ◽  
Author(s):  
Shu Jin ◽  
Lothar Ley
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Study ◽  
Density Gradient ◽  
Growth Condition ◽  
Photoelectron Spectroscopy ◽  
Defect Density ◽  
Total Yield ◽  
Structure Change ◽  
Amorphous Semiconductors ◽  
Hydrogenated Amorphous

ABSTRACTTotal yield photoelectron spectroscopy has been used to study the electronic structure change of UHV evaporated a-Ge subjected to posthydrogenation and various annealing cycles. We identify in R.T. hydrogenated a-Ge:H a new hydrogen induced defect at about Ev + 0.45eV, which can be healed upon 300°C annealing. This new defect accounts for the defect density gradient of hydrogenated amorphous semiconductors, spanning the range from ∼ 1018 cm−3 at the growing surface to 1018−1015 cm−3 in the bulk, depending on growth condition and time. The origin of this new defect is discussed.

An X-Ray Photoelectron Spectroscopic Study of the Free Surface Segregation of Impurities in Platinum and Palladium

1987 ◽  
Vol 41 (3) ◽  
pp. 516-522
Author(s):  
Alan J. Paul ◽  
Peter M. A. Sherwood
Keyword(s):  
Free Surface ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Surface Segregation ◽  
Pure Metal ◽  
Binding Energies ◽  
X Ray ◽  
The Core ◽  
Segregation Of Impurities ◽  
Elemental Form

X-ray photoelectron spectroscopy has been used to observe the free surface segregation of impurities in samples of platinum and palladium. Heating in vacuo to 600°C promoted the surface segregation of silver, gold, and carbon in platinum and the surface segregation of silver and sulfur in palladium. All species segregated in their elemental form. The core level binding energies of the silver and gold segregants were lower than those measured for the corresponding pure metal states.

scholarly journals Synthesis and Characterization of [CrLCl2]Cl Complexes (where L = S4 Macrocyclic Ligands): A Photoelectron Spectroscopic Study

2020 ◽  
Vol 32 (5) ◽  
pp. 1097-1100
Author(s):  
Krishna Kumar Yadav ◽  
Anil Kumar ◽  
Mohd Kashif Aziz ◽  
Rafat Saba ◽  
Ashish Rajak ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Elemental Analysis ◽  
Photoelectron Spectroscopy ◽  
Molar Conductivity ◽  
Macrocyclic Ligands ◽  
Synthesis And Characterization ◽  
X Ray

In this study, five complexes of the type [CrLCl2]Cl [where L = S4 macrocyclic ligands] were prepared and analyzed by elemental analysis, molar conductivity, infrared and X-ray photoelectron spectroscopy and their geometry was established as octahedral.

An x-ray photoelectron spectroscopic study of the chemical states of fluorine atoms in calcium silicate glasses

1998 ◽  
Vol 13 (3) ◽  
pp. 739-743 ◽  
Author(s):  
Satoshi Hayakawa ◽  
Akira Nakao ◽  
Chikara Ohtsutki ◽  
Akiyoshi Osaka ◽  
Shuji Matsumoto ◽  
...  
Keyword(s):  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Calcium Silicate ◽  
Silicate Glasses ◽  
Nonbridging Oxygen ◽  
X Ray ◽  
Chemical States ◽  
Oxygen Atoms

X-ray photoelectron spectroscopy has been used to examine the chemical states of fluorine in the glasses of composition xCaF2(50 – x)CaO · 50SiO2 (x = 5, 10, 15, 20, and 25 mol %) and xCaF2(50 – x/2)CaO(50 – x/2)SiO2 (x = 5, 10, 15, and 20 mol %). The analysis of the F1s spectra indicated that Ca2+ and F- ions introduced as CaF2 are favorably located among the Si–O skeleton forming Ca–F clusters. The fraction of the bridging and nonbridging oxygen atoms was derived from the O1s spectra, and the network of the fluorine-containing glasses was concluded to depend only on the ratio CaO/SiO2.

PHOTOELECTRON-SPECTROSCOPIC STUDY OF CORE-EXCITON DECAY IN AUGER-FREE LUMINESCENCE MATERIAL BaF2

2002 ◽  
Vol 09 (01) ◽  
pp. 325-329
Author(s):  
MASAO KAMADA ◽  
MINORU ITOH
Keyword(s):  
Absorption Coefficient ◽  
Spectroscopic Study ◽  
Excitation Spectrum ◽  
Photoelectron Spectroscopy ◽  
The Other ◽  
Recombination Process ◽  
Exciton Peak ◽  
Initial State ◽  
Decay Probability ◽  
Exciton Decay

The nonradiative decay processes of the Ba -5p core exciton in BaF 2 have been investigated by using photoelectron spectroscopy, since the exciton peak is missing in the excitation spectrum of the Auger-free luminescence. The decay probability of the direct recombination process estimated from the constant-initial state spectrum and the absorption coefficient was found to be smaller than unity, indicating the existence of the other decay processes. It is suggested that the Ba -5p core exciton is relaxed by about 0.9 eV.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Some Results of the Spectroscopic Study of Four Close Binary Systems of Early Spectral Types

1965 ◽  
Vol 5 ◽  
pp. 120-130
Author(s):  
T. S. Galkina
Keyword(s):  
Spectroscopic Study ◽  
Spectral Type ◽  
Spectroscopic Investigation ◽  
Binary Systems ◽  
Quantitative Information ◽  
Close Binary ◽  
Physical Parameters ◽  
Absorption And Emission ◽  
Close Binary Systems ◽  
Quantitative Estimates

It is necessary to have quantitative estimates of the intensity of lines (both absorption and emission) to obtain the physical parameters of the atmosphere of components.Some years ago at the Crimean observatory we began the spectroscopic investigation of close binary systems of the early spectral type with components WR, Of, O, B to try and obtain more quantitative information from the study of the spectra of the components.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

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