Oxygen diffusion in amorphous and partially crystalline gallium oxide

2019 ◽  
Vol 21 (8) ◽  
pp. 4268-4275 ◽  
Author(s):  
Alexandra von der Heiden ◽  
Manuel Bornhöfft ◽  
Joachim Mayer ◽  
Manfred Martin
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficients ◽  
Low Temperatures ◽  
Oxygen Diffusion ◽  
Gallium Oxide ◽  
Tracer Diffusion ◽  
Tof Sims ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

We established a TTT diagram of crystallisation of gallium oxide. Determination of oxygen tracer diffusion coefficients by IEDP/ToF-SIMS allowed us to access the activation energy for amorphous GaO1.5 at low temperatures.

Site Preference and Diffusion in Ni3Al Alloyed with Ir, Ta or Re at 1200°C

2010 ◽  
Vol 297-301 ◽  
pp. 1322-1327 ◽  
Author(s):  
N. Garimella ◽  
H.J. Choi ◽  
Yong Ho Sohn
Keyword(s):  
Diffusion Coefficients ◽  
Tracer Diffusion ◽  
Site Preference ◽  
Solid Diffusion ◽  
Ordered Intermetallic ◽  
Ternary Alloying ◽  
Tracer Diffusion Coefficients ◽  
Interdiffusion Coefficients ◽  
And Diffusion

Diffusion in L12-Ni3Al with ternary alloying additions of Ir, Ta and Re was investigated at 1200°C using solid-to-solid diffusion couples, and examined with respect to site preference in ordered intermetallic compound. In addition to determination of average ternary interdiffusion coefficients [1-3], average effective interdiffusion coefficients were determined directly from the experimental concentration profiles. Ni has the largest magnitude of average effective interdiffusion coefficient, followed by Al, Ir, Re and Ta. The average effective interdiffusion coefficients for Ir, Re and Ta are much smaller than those for Ni and Al. Tracer diffusion coefficients determined by extrapolation technique, and available literature also followed the same trend. The relative tendency of Ni, Al, Ir, Re and Ta to occupy the -Ni and -Al sites are correlated to these diffusion coefficients, with due consideration for diffusion mechanisms and coordination of atoms.

Oxygen Tracer Diffusion in A-Axis Oriented ZnO Thin Films Grown on (01-12) Sapphire by Pulsed Laser Deposition

2013 ◽  
Vol 566 ◽  
pp. 266-270
Author(s):  
Isao Sakaguchi ◽  
Ken Watanabe ◽  
Yutaka Adachi ◽  
Takeshi Ohgaki ◽  
Shunichi Hishita ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Diffusion ◽  
Pulsed Laser ◽  
Tracer Diffusion ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Sapphire Substrates ◽  
Tracer Diffusion Coefficients ◽  
Oxygen Tracer

The a-axis oriented ZnO thin films deposited on sapphire substrates by pulsed laser deposition were studied to investigate the effects of pre-annealing on oxygen diffusion. The effect was as follows: the oxygen diffusion coefficient decreased, and the oxygen concentration in the tailing regions of the profiles reduced. Ion images of an oxygen tracer revealed the high-diffusivity paths for oxygen tracer diffusion. The temperature dependence of oxygen tracer diffusion coefficients (Db) in as-deposited and pre-annealed thin films were determined to be Db [cm2/ = 9.2x102 exp (- 405 [kJ/mo / RT) and Db [cm2/ = 1.8x103 exp (- 418 [kJ/mo / RT), respectively. On basis of these results, the crystal orientation on Db and the mechanism for oxygen diffusion were discussed.

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