Electric-field control of non-volatile 180° switching of the unidirectional anisotropy field in a multiferroic heterostructure

2018 ◽  
Vol 20 (40) ◽  
pp. 25854-25860 ◽  
Author(s):  
Pingping Li ◽  
Cai Zhou ◽  
Cuimei Cao ◽  
Wenqiang Wang ◽  
Changjun Jiang
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Anisotropy Field ◽  
Field Control ◽  
Unidirectional Anisotropy ◽  
Multiferroic Heterostructure

We investigate the room-temperature, electric-field-mediated, non-volatile 180° switching of the unidirectional anisotropy field in an IrMn/CoFeB/Ta/Pb(Mg1/3Nb2/3)O3–PbTiO3 heterostructure.

Electric field control of magnetization in Nd1−xSmxFeO3 (x = 0, 0.2, and 0.4) at room temperature

2014 ◽  
Vol 104 (8) ◽  
pp. 082415 ◽  
Author(s):  
Chuanjiang Du ◽  
Hongwei Qin ◽  
Shaoqing Ren ◽  
Lei Zhao ◽  
Minglei Zhao ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Field Control

Resistive switching and electric field control of ferromagnetism in SnO2 films deposited at room temperature

2019 ◽  
Vol 475 ◽  
pp. 368-373 ◽  
Author(s):  
Xinran Liu ◽  
Jianpei Bu ◽  
Xue Ren ◽  
Bin Cheng ◽  
Jihao Xie ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Room Temperature ◽  
Field Control

Room temperature electric field control of magnetic properties for the α-Fe2O3/Fe3O4 composite structure

2019 ◽  
Vol 491 ◽  
pp. 165500 ◽  
Author(s):  
Weikang Liu ◽  
Bin Cheng ◽  
Tingting Miao ◽  
Jihao Xie ◽  
Liang Liu ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electric Field ◽  
Composite Structure ◽  
Room Temperature ◽  
Field Control

Electric field control of the γ-Al2O3/SrTiO3 interface conductivity at room temperature

2016 ◽  
Vol 109 (2) ◽  
pp. 021602 ◽  
Author(s):  
D. V. Christensen ◽  
F. Trier ◽  
M. von Soosten ◽  
G. E. D. K. Prawiroatmodjo ◽  
T. S. Jespersen ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Field Control

Electric field control of magnetism in nickel with coaxial cylinder structure at room temperature by electric double layer gating

2017 ◽  
Vol 5 (40) ◽  
pp. 10609-10614 ◽  
Author(s):  
Yunqiu Wang ◽  
Yu-Xi Song ◽  
Wen-Yi Tong ◽  
Yuanyuan Zhang ◽  
Ruijuan Qi ◽  
...  
Keyword(s):  
Electric Field ◽  
Double Layer ◽  
Electric Double Layer ◽  
Room Temperature ◽  
Coaxial Cylinder ◽  
Electric Double Layer Capacitor ◽  
Coaxial Cylinders ◽  
Double Layer Capacitor ◽  
Field Control ◽  
Potential Applications

Electric-field manipulation of magnetism in nickel coaxial cylinders with an electric double layer capacitor (EDLC) structure, with potential applications in spin capacitors.

Electric-Field Control of Nonvolatile Magnetization inCo40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3Structure at Room Temperature

2012 ◽  
Vol 108 (13) ◽  
Author(s):  
S. Zhang ◽  
Y. G. Zhao ◽  
P. S. Li ◽  
J. J. Yang ◽  
S. Rizwan ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Field Control

scholarly journals Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

2018 ◽  
Vol 4 (11) ◽  
pp. eaat4229 ◽  
Author(s):  
Sasikanth Manipatruni ◽  
Dmitri E. Nikonov ◽  
Chia-Ching Lin ◽  
Bhagwati Prasad ◽  
Yen-Lin Huang ◽  
...  
Keyword(s):  
Electric Field ◽  
Exchange Bias ◽  
Room Temperature ◽  
Uniaxial Anisotropy ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
State Variables ◽  
Ultralow Energy ◽  
Unidirectional Anisotropy ◽  
Beyond Cmos

Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO3(BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co0.9Fe0.1or La0.7Sr0.3MnO3. Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements.

scholarly journals Electric-field control of spin accumulation signals in silicon at room temperature

2011 ◽  
Vol 99 (13) ◽  
pp. 132511 ◽  
Author(s):  
Y. Ando ◽  
Y. Maeda ◽  
K. Kasahara ◽  
S. Yamada ◽  
K. Masaki ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Spin Accumulation ◽  
Field Control
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