scholarly journals Influence of quasi-particle density over polaron mobility in armchair graphene nanoribbons

2018 ◽  
Vol 20 (24) ◽  
pp. 16712-16718 ◽  
Author(s):  
Gesiel Gomes Silva ◽  
Wiliam Ferreira da Cunha ◽  
Rafael Timóteo de Sousa Junior ◽  
Antonio Luciano Almeida Fonseca ◽  
Luiz Antônio Ribeiro Júnior ◽  
...  
Keyword(s):  
Graphene Nanoribbons ◽  
Particle Density ◽  
Electronic Devices ◽  
Charge Carriers ◽  
Quasi Particle ◽  
Mobility Of Charge Carriers ◽  
Polaron Mobility ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

An important aspect concerning the performance of armchair graphene nanoribbons (AGNRs) as materials for conceiving electronic devices is related to the mobility of charge carriers in these systems.

Effects of the Inclusion of Armchair Graphene Nanoribbons on the Electrical Conduction Properties of NN-Heterojunction 4H-6H/SiC Diodes

2019 ◽  
Vol 962 ◽  
pp. 29-35
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Electrical Conduction ◽  
Field Effect Transistors ◽  
Graphene Nanoribbons ◽  
Electronic Devices ◽  
High Mobility ◽  
Atomic Scale ◽  
Mobility Of Charge Carriers ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene ◽  
Conduction Properties

In recent years, graphene has sparked the interest of researchers due to its promising electrical and physical attributes. These attributes make it highly suitable to develop electronic devices with ultra-high mobility of charge carriers. Meanwhile silicon carbide (SiC), a wide bandgap semiconductor material, is being used for high temperature optoelectronic applications. SiC has more than 250 different crystalline forms, these are called polytypes. Some of these polytypes (such as 4H-SiC, 6H-SiC and 3C-SiC) have exceptional physical and electrical properties. Electronic devices which have SiC and graphene as their constituent materials may combine the outstanding attributes of both materials. This article attempts to simulate electronic devices having SiC and graphene as their constituent materials. For this purpose, simulations of a novel nn-heterojunction 4H-6H/SiC diodes with the inclusion of an armchair nanoribbon layer have been carried out. All of the simulations have been run using QuantumWise Atomistix Toolkit (ATK) software, which is an atomic scale electronic device simulator. The density of the states, charge carrier densities and current-voltage curves of the simulated devices have been computed. The simulation results showed a significant improvement in the electrical conduction properties of nn-heterojunction 4H-6H/SiC diodes after the inclusion of the armchair graphene nanoribbons. These simulations provide the groundwork for our future experiments, which will be targeted on fabricating high mobility diodes and/or field effect transistors.

Bond length pattern associated with charge carriers in armchair graphene nanoribbons

2017 ◽  
Vol 23 (10) ◽  
Author(s):  
Jonathan Fernando Teixeira ◽  
Pedro Henrique de Oliveira Neto ◽  
Wiliam Ferreira da Cunha ◽  
Luiz Antonio Ribeiro ◽  
Geraldo Magela e Silva
Keyword(s):  
Bond Length ◽  
Graphene Nanoribbons ◽  
Charge Carriers ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

scholarly journals Effective Mass of Quasiparticles in Armchair Graphene Nanoribbons

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Marcelo Macedo Fischer ◽  
Leonardo Evaristo de Sousa ◽  
Leonardo Luiz e Castro ◽  
Luiz Antonio Ribeiro ◽  
Rafael Timóteo de Sousa ◽  
...  
Keyword(s):  
Charge Transport ◽  
Effective Mass ◽  
Quantum Confinement ◽  
Graphene Nanoribbons ◽  
Electronic Devices ◽  
Optoelectronic Devices ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

AbstractArmchair graphene nanoribbons (AGNRs) may present intrinsic semiconducting bandgaps, being of potential interest in developing new organic-based optoelectronic devices. The induction of a bandgap in AGNRs results from quantum confinement effects, which reduce charge mobility. In this sense, quasiparticles’ effective mass becomes relevant for the understanding of charge transport in these systems. In the present work, we theoretically investigate the drift of different quasiparticle species in AGNRs employing a 2D generalization of the Su-Schrieffer-Heeger Hamiltonian. Remarkably, our findings reveal that the effective mass strongly depends on the nanoribbon width and its value can reach 60 times the mass of one electron for narrow lattices. Such underlying property for quasiparticles, within the framework of gap tuning engineering in AGNRs, impact the design of their electronic devices.

Family-dependent magnetism in atomic boron adsorbed armchair graphene nanoribbons

2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng
Keyword(s):  
Fermi Level ◽  
Graphene Nanoribbons ◽  
Spin Splitting ◽  
Localized State ◽  
The Family ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene ◽  
Boron Adsorption

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.

Oxygen-promoted synthesis of armchair graphene nanoribbons on Cu(111)

2021 ◽  
Author(s):  
Penghui Ji ◽  
Oliver MacLean ◽  
Gianluca Galeotti ◽  
Dominik Dettmann ◽  
Giulia Berti ◽  
...  
Keyword(s):  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

scholarly journals Intrinsic properties of bipolarons in armchair graphene nanoribbons

2021 ◽  
Vol 769 ◽  
pp. 138387
Author(s):  
Gesiel G. Silva ◽  
Wiliam F. da Cunha ◽  
Marcelo L. Pereira Júnior ◽  
Luiz F. Roncaratti ◽  
Luiz A. Ribeiro
Keyword(s):  
Graphene Nanoribbons ◽  
Intrinsic Properties ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene
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