Uniaxial magnetic anisotropy energy of bimetallic Co–Ni clusters from a first-principles perspective

2018 ◽  
Vol 20 (24) ◽  
pp. 16528-16539 ◽  
Author(s):  
J. Mejía-López ◽  
Ana Mejía-López ◽  
J. Mazo-Zuluaga
Keyword(s):  
Magnetic Anisotropy ◽  
First Principles ◽  
Molecular Magnetism ◽  
Magnetic Storage ◽  
Chemical Behavior ◽  
Magnetic Anisotropy Energy ◽  
Uniaxial Magnetic Anisotropy ◽  
Physical Chemical ◽  
New Information ◽  
Ni Clusters

New information regarding the magnetic anisotropy and physical–chemical behavior of CoNi nanoclusters makes them promising for magnetic-storage, molecular-magnetism or quantum-computation.

scholarly journals Magnetic anisotropy of graphene quantum dots decorated with a ruthenium adatom

2013 ◽  
Vol 4 ◽  
pp. 441-445 ◽  
Author(s):  
Igor Beljakov ◽  
Velimir Meded ◽  
Franz Symalla ◽  
Karin Fink ◽  
Sam Shallcross ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Density Functional ◽  
Magnetic Transition ◽  
Graphene Quantum Dots ◽  
Magnetic Storage ◽  
Magnetic Anisotropy Energy ◽  
Magnetization Direction ◽  
Storage Devices ◽  
Out Of Plane ◽  
Graphene Edge

The creation of magnetic storage devices by decoration of a graphene sheet by magnetic transition-metal adatoms, utilizing the high in-plane versus out-of-plane magnetic anisotropy energy (MAE), has recently been proposed. This concept is extended in our density-functional-based modeling study by incorporating the influence of the graphene edge on the MAE. We consider triangular graphene flakes with both armchair and zigzag edges in which a single ruthenium adatom is placed at symmetrically inequivalent positions. Depending on the edge-type, the graphene edge was found to influence the MAE in opposite ways: for the armchair flake the MAE increases close to the edge, while the opposite is true for the zigzag edge. Additionally, in-plane pinning of the magnetization direction perpendicular to the edge itself is observed for the first time.

scholarly journals Barium hexaferrite/muscovite heteroepitaxy with mechanically robust perpendicular magnetic anisotropy

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Wei-En Ke ◽  
Pao-Wen Shao ◽  
Chang-Yang Kuo ◽  
Haili Song ◽  
Rong Huang ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Barium Hexaferrite ◽  
Magnetic Storage ◽  
Circuit Boards ◽  
Magnetic Anisotropy Energy ◽  
Storage Devices ◽  
Magnetic Devices ◽  
Mechanical Bending ◽  
Magnetic Storage Devices

AbstractRecent advances in the design and development of magnetic storage devices have led to an enormous interest in materials with perpendicular magnetic anisotropy (PMA) property. The past decade has witnessed a huge growth in the development of flexible devices such as displays, circuit boards, batteries, memories, etc. since they have gradually made an impact on people’s lives. Thus, the integration of PMA materials with flexible substrates can benefit the development of flexible magnetic devices. In this study, we developed a heteroepitaxy of BaFe12O19 (BaM)/muscovite which displays both mechanical flexibility and PMA property. The particular PMA property was characterized by vibrating sample magnetometer, magnetic force microscopy, and x-ray absorption spectroscopy. To quantify the PMA property of the system, the intrinsic magnetic anisotropy energy density of ~2.83 Merg cm−3 was obtained. Furthermore, the heterostructure exhibits robust PMA property against severe mechanical bending. The findings of this study on the BaM/muscovite heteroepitaxy have several important implications for research in next-generation flexible magnetic recording devices and actuators.

scholarly journals Reversible switching of magnetic states by electric fields in nitrogenized-divacancies graphene decorated by tungsten atoms

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Gui-Xian Ge ◽  
Hai-Bin Sun ◽  
Yan Han ◽  
Feng-Qi Song ◽  
Ji-Jun Zhao ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Data Storage ◽  
Electric Fields ◽  
High Performance ◽  
Occupation Number ◽  
Magnetic Storage ◽  
Magnetic Anisotropy Energy ◽  
Magnetic States ◽  
Storage Units ◽  
Promising Avenue

Abstract Magnetic graphene-based materials have shown great potential for developing high-performance electronic devices at sub-nanometer such as spintronic data storage units. However, a significant reduction of power consumption and great improvement of structural stability are needed before they can be used for actual applications. Based on the first-principles calculations, here we demonstrate that the interaction between tungsten atoms and nitrogenized-divacancies (NDVs) in the hybrid W@NDV-graphene can lead to high stability and large magnetic anisotropy energy (MAE). More importantly, reversible switching between different magnetic states can be implemented by tuning the MAE under different electric fields and very low energy is consumed during the switching. Such controllable switching of magnetic states is ascribed to the competition between the tensile stain and orbital magnetic anisotropy, which originates from the change in the occupation number of W-5d orbitals under the electric fields. Our results provide a promising avenue for developing high-density magnetic storage units or multi-state logical switching devices with ultralow power at sub-nanometer.

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