Citrate-controlled chemical solution deposition of PbSe thin films

CrystEngComm ◽  
2019 ◽  
Vol 21 (11) ◽  
pp. 1818-1825 ◽  
Author(s):  
Maayan Perez ◽  
Tzvi Templeman ◽  
Michael Shandalov ◽  
Vladimir Ezersky ◽  
Eyal Yahel ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Chemical Solution Deposition ◽  
Trisodium Citrate ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Photoluminescence Emission ◽  
Citrate Concentration

Trisodium citrate profoundly affects chemical solution deposition of PbSe thin films. Variation of citrate concentration allows control over grain size, and consequently, over photoluminescence emission from the films.

Grain Size Dependent Transport and Magnetoresistance Behavior of Chemical Solution Deposition Grown Nanostructured La07Sr03MnO3 Manganite Films

2008 ◽  
Vol 8 (8) ◽  
pp. 4146-4151 ◽  
Author(s):  
R. N. Parmar ◽  
J. H. Markna ◽  
P. S. Solanki ◽  
R. R. Doshi ◽  
P. S. Vachhani ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Time Intervals ◽  
Solution Deposition ◽  
Size Dependent ◽  
Time Control ◽  
Insulator Metal Transition ◽  
Dependent Transport

Grain-size dependence of electronic transport and magnetoresistance (MR) properties of nanostructured La0.7Sr0.3 MnO3 (LSMO) manganite thin films on LaAlO3 (100) single crystal substrates prepared using Chemical Solution Deposition (CSD) technique have been studied. The LSMO thin films were annealed at temperatures in the range of 700–1000 °C for different time intervals [6 h and 12 h] and crystallized as singlephase LSMO. Microstructural studies carried out using AFM show a marginal increase in the grain-size from 50 to 90 nm as the temperature was varied from 700 °C to 1000 °C respectively. It has been observed that the insulator-metal transition (TP) and MR depend on the grain size. In zero applied field, resistivity reduction is ∼ 103 at 5 K for the films annealed at 700 °C [TP ∼ 341 K] and 1000 °C [TP ∼ 373 K]. MR versus H isotherms reveal that MR enhances in the vicinity of TP but decreases at low temperatures. The results obtained from the electronic and magnetotransport studies are in good agreement with the change in surface morphology of the films studied, which shows that the randomly distributed domains are composed of faceted grains. Synthesizing conditions, annealing temperature and time control the growth and alignment of grains into the domains, which cause better conduction at grain interface.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

Enhanced electrical conductivity of Au–LaNiO3 nanocomposite thin films by chemical solution deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (94) ◽  
pp. 76783-76787 ◽  
Author(s):  
H. L. Wang ◽  
X. K. Ning ◽  
Z. J. Wang
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Chemical Solution Deposition ◽  
Nanocomposite Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Nanocomposite Thin Films ◽  
One Step

Au–LaNiO3 (Au–LNO) nanocomposite films with 3.84 at% Au were firstly fabricated by one-step chemical solution deposition (CSD), and their electrical properties were investigated.

Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

2001 ◽  
Vol 688 ◽  
Author(s):  
H. Uchida ◽  
H. Yoshikawa ◽  
I. Okada ◽  
H. Matsuda ◽  
T. Iijima ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Materials ◽  
Processing Temperature ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

scholarly journals Synthesis and Properties of V-Doped (Sr,Ca)2(Nb,Ta)2O7 Thin Films by Chemical Solution Deposition

2005 ◽  
Vol 52 (12) ◽  
pp. 902-906
Author(s):  
Wataru Sakamoto ◽  
Yukinobu Yura ◽  
Toshiaki Yamaguchi ◽  
Koichi Kikuta ◽  
Shin-ichi Hirano
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition

:W thin films obtained by chemical solution deposition: Morphological and ferroelectric characteristics

2008 ◽  
Vol 461 (1-2) ◽  
pp. 326-330 ◽  
Author(s):  
N.L. Amsei Júnior ◽  
A.Z. Simões ◽  
L.S. Cavalcante ◽  
F. Moura ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Solution Deposition
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