Study on a co-doped CdZnTe crystal containing Yb and In

CrystEngComm ◽  
2019 ◽  
Vol 21 (16) ◽  
pp. 2620-2625 ◽  
Author(s):  
Tao Wang ◽  
Xin Ai ◽  
Ziang Yin ◽  
Qinghua Zhao ◽  
Boru Zhou ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cdznte Crystal ◽  
Co Doped

The electron mobility of CZT:(ln,Yb) was increased by about 26% over that of the CZT:In crystal.

Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 419-422
Author(s):  
Christian Heidorn ◽  
Romain Esteve ◽  
Tobias Höchbauer ◽  
Roland Rupp
Keyword(s):  
Electron Mobility ◽  
The Impact ◽  
Ge Doping ◽  
Co Doped

The incorporation of Germanium (Ge) in 4H-SiC has recently being reported as enabling an increase of the electron mobility in n-type doped layers. The present work aims at evaluating the impact of the Ge doping on two types of SiC devices: Merged PiN-Schottky (MPS) diodes and Trench MOSFETs.

scholarly journals X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY ON HIGH-ELECTRON-MOBILITY GALLIUM AND HYDROGEN CO-DOPED ZINC OXIDE THIN FILMS

2018 ◽  
Vol 56 (1A) ◽  
pp. 93
Author(s):  
Anh Thanh Tuan Pham
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Hydrogen Plasma ◽  
Crystalline Lattice ◽  
High Electron ◽  
X Ray ◽  
Doped Zno ◽  
Co Doped

In this study, gallium and hydrogen co-doped ZnO (HGZO) thin films were investigated. The films were deposited by sputtering from Ga-doped ZnO (GZO) ceramic target in hydrogen and argon plasma. The as-deposited HGZO films possess enhanced electron mobility of 48.6 cm2/Vs as compared to that of 39.4 cm2/Vs of GZO films, sputtered from the same target. Because of insignificant variation in crystallinity, this improvement is attributed to roles of hydrogen in crystalline lattice structure of the films. X-ray photoelectron spectroscopy (XPS) is employed as an essential technique for quantitative analyses and chemical binding states of films constituent elements. The roles of hydrogen are clarified through the binding states of Zn 2p, O 1s and Ga 3d. Obtained results suggest that the films are deposited more effectively in hydrogen plasma. Some point defects such as oxygen vacancies (VO), dangling bonds can be passivated in form of H+VOHO and O–H bonds. As a result, the reduction of scattering centers is indicated as a reason for the mobility improvement of the HGZO films.

scholarly journals Impacts of the thickness on the electron mobility of gallium and hydrogen co– doped zinc oxide thin films

2019 ◽  
Vol 2 (2) ◽  
pp. 82-87
Author(s):  
Anh Thanh Tuan Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Electron Mobility ◽  
High Mobility ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Average Transmittance ◽  
Wide Wavelength Range ◽  
Doped Zno ◽  
Co Doped

this work, impacts of the thickness on electron mobility of Ga and H2 co-doped ZnO (HGZO) thin films were investigated. The HGZO films were prepared on glass substrate by using magnetron sputtering from ceramic Ga-doped ZnO (GZO) target in the gas mixture of argon and hydrogen. Based on the Hall measurement, the mobility enhanced fastly from 44.6 to 53.4cm2/Vs with the increasing thickness from 350 to 900 nm, then tends to be saturated at ~55cm2/Vs with further thickness. Most of the films achieve the mobility of >50cm2/Vs, which is very high value for sputtered TCOs thin films. The thicknessdependent mobility is explained in term of grain boundary scattering. The improvement of crystalline quality reduced grain boundary scattering, which lead to the fast increase in mobility of the films with 350–900nm in thickness. When the thickness increased more than 900nm, however, the appearance of many defects increased scattering centers and saturates the mobility. Furthermore, the results showed the HGZO films with optimum thickness of 800nm obtained low resistivity (5.3 10-4􀁛cm), high average transmittance (83.3%) in the wide wavelength range of 400–1100nm, and the highest figure of merit (10.3 103􀁛-1cm-1) corresponding to high mobility (51.1cm2/Vs).

970 nm Infrared to Visible Upconversion in Er3+ and Yb3+ Co-Doped PLZT Glass Ceramic Thin Films

2008 ◽  
Author(s):  
Xiaomei Guo ◽  
Kewen Kevin. Li ◽  
Xuesheng Chen ◽  
Yingyin Kevin. Zou ◽  
Hua Jiang
Keyword(s):  
Thin Films ◽  
Glass Ceramic ◽  
Ceramic Thin Films ◽  
Co Doped

Tunable Carbon Surface from Mono- to Multi-Metallic Single Atoms

2020 ◽  
Author(s):  
Weihong Lai ◽  
Heng Wang ◽  
Quan jiang ◽  
Zichao Yan ◽  
Hanwen Liu ◽  
...  
Keyword(s):  
Synergistic Effects ◽  
Structural Evolution ◽  
Charge Compensation ◽  
Catalytic Reactions ◽  
Single Atom ◽  
Carbon Surface ◽  
Hydrogen Electrode ◽  
Single Atoms ◽  
Mass Activity ◽  
Co Doped

<p>Herein, we develop a non-selective charge compensation strategy to prepare multi-single-atom doped carbon (MSAC) in which a sodium p-toluenesulfonate (PTS-Na) doped polypyrrole (S-PPy) polymer is designed to anchor discretionary mixtures of multiple metal cations, including iron (Fe<sup>3+</sup>), cobalt (Co<sup>3+</sup>), ruthenium (Ru<sup>3+</sup>), palladium (Pd<sup>2+</sup>), indium (In<sup>3+</sup>), iridium (Ir<sup>2+</sup>), and platinum (Pt<sup>2+</sup>) . As illustrated in Figure 1, the carbon surface can be tuned with different level of compositional complexities, including unary Pt<sub>1</sub>@NC, binary (MSAC-2, (PtFe)<sub>1</sub>@NC), ternary (MSAC-3, (PtFeIr)<sub>1</sub>@NC), quaternary (MSAC-4, (PtFeIrRu)<sub>1</sub>@NC), quinary (MSAC-5, (PtFeIrRuCo)<sub>1</sub>@NC), senary (MSAC-6, (PtFeIrRuCoPd)<sub>1</sub>@NC), and septenary (MSAC-7, (PtFeIrRuCoPdIn)<sub>1</sub>@NC) samples. The structural evolution of carbon surface dictates the activities of both ORR and HER. The senary MSAC-6 achieves the ORR mass activity of 18.1 A·mg<sub>metal</sub><sup>-1</sup> at 0.9 V (Vs reversible hydrogen electrode (RHE)) over 30K cycles, which is 164 times higher than that of commercial Pt/C. The quaternary MSAC-4 presented a comparable HER catalytic capability with that of Pt/C. These results indicate that the highly complexed carbon surface can enhance its ability over general electrochemical catalytic reactions. The mechanisms regarding of the ORR and HER activities of the alternated carbon surface are also theoretically and experimentally investigated in this work, showing that the synergistic effects amongst the co-doped atoms can activate or inactivate certain single-atom sites.</p>

Transport and magnetic properties of co-doped ferromagnetic semiconductor (In,Fe,Mn)As

2020 ◽  
Vol 13 (8) ◽  
pp. 083005
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Kohei Okamoto ◽  
Nguyen Thanh Tu ◽  
Masaaki Tanaka
Keyword(s):  
Magnetic Properties ◽  
Ferromagnetic Semiconductor ◽  
Co Doped

Upconversion Luminescence of MgSc2O4: Er3+/Yb3+ Nanocrystals Co-doped Alkali Ions

2020 ◽  
Vol 41 (11) ◽  
pp. 1351-1357
Author(s):  
Mei-juan YUANG ◽  
◽  
Jing LI ◽  
Hui-lian QIN ◽  
Ya-ru PENG ◽  
...  
Keyword(s):  
Upconversion Luminescence ◽  
Alkali Ions ◽  
Co Doped

Photoluminescence Properties of Eu2+, Dy3+, Li+ Co-doped CaSi2O2N2 Phosphors

2013 ◽  
Vol 27 (10) ◽  
pp. 1095-1098
Author(s):  
Ya-Jun LU ◽  
Hong-Zhi WANG ◽  
Yao-Gang LI ◽  
Qing-Hong ZHANG
Keyword(s):  
Photoluminescence Properties ◽  
Co Doped
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