Controllable synthesis of single-crystal SnO2 nanowires and tri-crystal SnO2 nanobelts

CrystEngComm ◽  
2018 ◽  
Vol 20 (44) ◽  
pp. 7114-7119 ◽  
Author(s):  
Yanjie Wei ◽  
He Zheng ◽  
Shuaishuai Hu ◽  
Shizhou Pu ◽  
Huayu Peng ◽  
...  
Keyword(s):  
Single Crystal ◽  
Growth Direction ◽  
Controllable Synthesis ◽  
Nucleation Sites ◽  
Sno2 Nanowires ◽  
Nanowires Growth ◽  
Sno2 Nanobelts

Depending on the nucleation sites, two types of SnO2 nanostructures were fabricated: falciform single-crystal SnO2 nanowires (growth direction from [1̄01] to [001]) and tri-crystal SnO2 nanobelts containing (301) and (1̄01) twins.

scholarly journals Influence of Metal Catalyst on SnO2 Nanowires Growth and Gas Sensing Performance

Proceedings ◽  
2017 ◽  
Vol 1 (4) ◽  
pp. 460 ◽  
Author(s):  
Dario Zappa ◽  
Rebecca Melloni ◽  
Valentin-Adrian Maraloiu ◽  
Nicola Poli ◽  
Marco Rizzoni ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Metal Catalyst ◽  
Sno2 Nanowires ◽  
Nanowires Growth ◽  
Sensing Performance

Crystallinity of YBa2Cu3O7−x single crystals grown by the pulling method

1996 ◽  
Vol 11 (4) ◽  
pp. 804-812 ◽  
Author(s):  
Y. Namikawa ◽  
M. Egami ◽  
S. Koyama ◽  
Y. Shiohara ◽  
H. Kutami
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Growth Direction ◽  
Annealed Sample ◽  
Seed Crystal ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Crystal Seed ◽  
Better Than

Large YBa2Cu3O7−x (Y123) single crystals (larger than 13 mm cubed) have been grown along the c-axis reproducibly by the modified pulling method. The crystallinity of Y123 single crystal was investigated by x-ray diffraction and x-ray topography. Crystals grown from an MgO single crystal seed had some low angle subgrain boundaries which tilted 0.1–0.8° from each other. These grain boundaries originated from the seed crystal, and the subgrains were extended along the growth direction from the seed crystal. Y123 single crystals with no marked subgrains in the whole area were obtained by using Y123 single subgrain crystal seeds. FWHM of the x-ray rocking curve for the crystal so produced was about 0.14°, which was much better than the spectrum consisting of several separated peaks obtained from the previous crystals. Tc onset of the annealed sample was about 93.6 K, and the transition width was about 0.9 K. The low angle subgrain boundaries did not seem to be effective pinning centers for the magnetic flux.

Correction to Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation

2012 ◽  
Vol 134 (44) ◽  
pp. 18476-18476 ◽  
Author(s):  
Hong Wang ◽  
Guanzhong Wang ◽  
Pengfei Bao ◽  
Shaolin Yang ◽  
Wei Zhu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Monolayer Graphene ◽  
Controllable Synthesis ◽  
Copper Foils

In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors

2007 ◽  
Vol 1003 ◽  
Author(s):  
Takashi Minakata ◽  
Yutaka Nastume
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystalline Structure ◽  
Grazing Incidence ◽  
Growth Direction ◽  
Molecular Alignment ◽  
Patterned Substrate ◽  
Polarized Microscopy ◽  
Transmission Electron ◽  
And Performance

AbstractWe have fabricated solution-processed thin films of pentacene by casting solution on a substrate and vaporizing solvent. The films with large oriented platelet domains were obtained by directionally grown condition. Molecular alignment in the directionally grown grains has been studied by several kinds of structural analysis. Oriented domains with the width of several hundreds microns and the length in an order of cm of the films were confirmed by polarized microscopy. In-plane crystalline structure of the domain has been studied by grazing incidence X-ray diffraction (GIXD) and strong anisotropy of in-plane crystalline structure was confirmed. Crystalline growth direction of the film was determined to be b-axis from both transmission electron diffraction and GIXD. Thin films transistors (TFTs) with directionally oriented domains of the films were fabricated on electrode patterned substrate. The observed maximum carrier mobility of 2.7 cm2/Vs was comparable to that of single crystal, which indicated that the quality of the film was almost identical with the single crystal. Correlation between FET performance and growth direction was studied and preferred performance of TFTs with the film grown perpendicularly to the channel was observed.

Study on the inhomogeneity of single crystal along the growth direction

2010 ◽  
Vol 150 (29-30) ◽  
pp. 1425-1428 ◽  
Author(s):  
Xian Wang ◽  
Zhuo Xu ◽  
Zhenrong Li ◽  
Hongbing Chen
Keyword(s):  
Single Crystal ◽  
Growth Direction

Controllable synthesis and formation mechanism of single-crystal β-Co(OH)2 microrings as sensors for detection of nitrite ions

2017 ◽  
Vol 193 ◽  
pp. 371-379 ◽  
Author(s):  
Cui Tingting ◽  
Yanting Zhao ◽  
Yao Qian ◽  
Yali Shao ◽  
Mengting Fan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Formation Mechanism ◽  
Controllable Synthesis

Low Temperature Gas Phase Synthesis of Germanium Nanowires

2003 ◽  
Vol 789 ◽  
Author(s):  
Sanjay Mathur ◽  
Hao Shen ◽  
Ulf Werner
Keyword(s):  
Single Crystal ◽  
Gas Phase ◽  
Growth Direction ◽  
High Yield ◽  
Phase Decomposition ◽  
Phase Synthesis ◽  
Germanium Nanowires ◽  
X Ray ◽  
Spontaneous Formation ◽  
20 Nm

ABSTRACTSingle crystal Ge nanowires (NWs) were obtained in high yield by gas phase decomposition of germanium di-cyclopentadienylide ([Ge(C5H5)2]), at 325 °C on iron substrates. Highresolution electron microscopy (SEM/TEM) showed Ge NWs to be uniform in terms of diameter (20 nm) and length (> 25 μm). The wire growth is selective and appears to be governed by a Ge-Fe alloy epilayer formed by the reaction between Ge clusters and iron substrate, during the initial stages of the CVD process. The supersaturation of Ge-Fe solid-solution with respect to Ge content induces the spontaneous formation of single crystal germanium nuclei that act as templates for the nanowire growth. X-ray and electron diffraction revealed the NWs to be single crystals of cubic germanium with a preferred growth direction[11–2]. The proposed base-growth model on Fe substrate is supported by TEM, EDX and XPS studies.

Optical properties and carrier dynamics of ensembles of InP nanowires grown on non-single-crystal platforms

2009 ◽  
Vol 1178 ◽  
Author(s):  
Takehiro Onishi ◽  
Andrew J. Lohn ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
Quartz Substrate ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Growth Direction ◽  
Longitudinal Optical ◽  
Face Centered Cubic ◽  
Single Crystal Surfaces ◽  
Face Centered

AbstractOptically active InP nanowires were grown on a quartz substrate covered with a layer (100 nm) of hydrogenated amorphous silicon (a-Si:H) by metalorganic chemical vapor deposition (MOCVD), demonstrating that single-crystal semiconductor nanowires can be formed on non-single-crystal surfaces. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, cathodoluminescence (CL), and photoluminescence (PL) were used to characterize the structural and optical properties of the nanowires. The nanowires on a-Si:H grew in random directions with high density. The XRD suggests that nanowires having either hexagonal-close-packed or face-centered cubic lattices co-exist. The Raman spectrum shows peaks associated with transverse optical (TO) and longitudinal optical (LO) branches of InP. The CL intensity does not vary signi?cantly along the growth direction and appears to be originated from the entire structure of the nanowire when probed at various positions. The CL data suggests that recombination is slow enough to allow the carriers to diffuse the complete length of the nanowires (˜2 m in length) before recombining. The PL spectrum suggested the nanowire had a part that contributes to the observed blue shift while the other part had nearly bulk feature in their structure.

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