Synthesis and phase transformation of NaGdF4:Yb–Er thin films using electro-deposition method at moderate temperatures

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6919-6924 ◽  
Author(s):  
Hong Jia ◽  
Yiping Zhou ◽  
Xue Li ◽  
Yan Li ◽  
Weiying Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformation ◽  
Hexagonal Phase ◽  
Deposition Method ◽  
Electro Deposition

Herein, a thin film of hexagonal-phase NaGdF4:Yb–Er is fabricated by electro-deposition at moderate temperatures. The phase of NaGdF4:Yb–Er thin film can be controlled by adding PVP in the electrolyte.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

CuxSbySz THIN FILMS PRODUCED BY ANNEALING CHEMICALLY DEPOSITED Sb2S3-CuS THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 667-670 ◽  
Author(s):  
Y. RODRÍGUEZ-LAZCANO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Band Gap ◽  
Deposition Method ◽  
Photovoltaic Devices ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Different Temperatures

The possibility of generating ternary compounds through annealing thin film stacks of binary composition has been demonstrated before. In this work we report a method to produce large area coating of ternary compounds through a reaction in solid state between thin films of Sb2S3 and CuS. Thin films of Sb2S3 -CuS were deposited on glass substrates in the sequence of Sb2S3 followed by CuS (on Sb2S3 ) using chemical bath deposition method. The multilayer stack, thus produced, of approximately 0.5 μm in thickness, where annealed under nitrogen and argon atmospheres at different temperatures to produce films of ternary composition, CuxSbySz . An optical band gap of ~1.5 eV was observed in these films, suggesting that the thin films of ternary composition formed in this way are suitable for use as absorber materials in photovoltaic devices. The results on the analyses of structural, electrical and optical properties of films formed with different combinations of thickness in the multilayers will be discussed in the paper.

scholarly journals Effect of concentration of cadmium sulfate solution on structural, optical and electric properties of Cd1–x Zn x S thin films

2021 ◽  
Vol 42 (11) ◽  
pp. 112101
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Abstract Cd1– x Zn x S thin films were deposited by chemical bath deposition (CBD) on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is the hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E g can be expressed by the equation E g(x) = 0.59x 2 + 0.69x + 2.43. Increasing the zinc content can increase the optical band gap, and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300–800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Thin films of praseodymium sesquioxide: Martensitic character of the monoclinic to hexagonal phase transformation

1971 ◽  
Vol 34 (7) ◽  
pp. 437-438 ◽  
Author(s):  
C. Boulesteix ◽  
P.-E. Caro ◽  
M. Gasgnier ◽  
Ch.H. La Blanchetais ◽  
G. Schiffmacher
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Hexagonal Phase

Red Emitting Electroluminescent Devices Using Ga2O3 Phosphor Thin Films Prepared by Sol-Gel Process

2001 ◽  
Vol 667 ◽  
Author(s):  
Tadatsugu Minami ◽  
Tetsuya Shirai ◽  
Toshihiro Miyata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Deposition Method ◽  
Sinusoidal Wave ◽  
High Luminance ◽  
Insulating Layer ◽  
Electroluminescent Devices ◽  
Sol Gel Process ◽  
Dopant Source

ABSTRACTHigh-luminance red-emitting thin-film electroluminescent (TFEL) devices have been developed using Ga2O3 phosphor thin films prepared by a sol-gel deposition method. Single-insulating-layer-type TFEL devices were fabricated by depositing a Cr- or a Eu-activated Ga2O3 phosphor thin film onto a thick BaTiO3 ceramic sheet insulator. The Ga2O3:Cr or Ga2O3:Eu thin-film emitting layer was prepared by a sol-gel process using gallium acethylacetonate (Ga(C5H7O2)3) as the Ga source with Cr(C5H7O2)3 or EuC13 as the dopant source, respectively. A high red luminance of 622 cd/m2 was obtained for a Ga2O3:Cr TFEL device driven by a sinusoidal wave voltage at 1 kHz.

Fabrication of NiTe films by transformed electrodeposited Te thin films on Ni foils and their electrical properties

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54713-54718 ◽  
Author(s):  
Yannan Mu ◽  
Qian Li ◽  
Pin Lv ◽  
Yanli Chen ◽  
Dong Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Electrochemical Deposition ◽  
Deposition Method ◽  
Electrochemical Deposition Method

Tellurium (Te) source of compact nickel telluride (NiTe) thin film was prepared by simple electrochemical deposition method.

Evaluation of the Structures and Oxidation Resistances of MoSi2-Si Composite Thin Films

2010 ◽  
Vol 445 ◽  
pp. 148-151 ◽  
Author(s):  
Teppei Hayashi ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Oxidation Resistance ◽  
Hexagonal Phase ◽  
Molar Ratio ◽  
Radio Frequency Magnetron Sputtering ◽  
Unknown Phase

Thin films of mixtures of molybdenum silicate (MoSi2) and silicon (Si) (MoSiX, where the Mo to Si molar ratio = 1:X) were deposited on silicon nitride (Si3N4) polycrystalline substrates by radio-frequency magnetron sputtering using a target made of a mixture of MoSi2 and Si powders. The crystal structure of MoSiX thin films deposited on the Si3N4 substrate consisted of a mixture of a hexagonal phase and an unknown phase when X > 2.05. A thin film consisting almost entirely of the unknown phase could be deposited when X = 2.1−2.15. Molybdenum silicate can exist in the forms Mo3Si, Mo5Si3, or MoSi2, but to date there has been no report of molybdenum silicate having a Si to Mo molar composition ratio of larger than 2. It was found that the surfaces of thin films of the hexagonal phase or the unknown phase were readily oxidized, whereas the surfaces of thin films of a mixture of the hexagonal phase and the unknown phase exhibit excellent oxidation resistance in air at temperatures up to 700 °C.

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

2013 ◽  
Vol 818 ◽  
pp. 88-91
Author(s):  
Kun Liu ◽  
Ji Sheng Yang ◽  
Rui Li ◽  
Wei Peng ◽  
Shi Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Electro Deposition ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Deposition Technology

The properties of the absorber layer of solar cell CuInSe2(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A1 mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.

scholarly journals Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd1-xZnxS thin films

2021 ◽  
Author(s):  
Yuming Xue ◽  
Shipeng Zhang ◽  
Dianyou Song ◽  
Liming Zhang ◽  
Xinyu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Film Growth ◽  
Structural Characteristics ◽  
Hexagonal Phase ◽  
Zinc Content ◽  
Sulfate Concentration ◽  
Cadmium Sulfate

Cd1-xZnxS thin films were deposited by chemical bath deposition (CBD) on glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film. The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity. Due to the less Cd2+ involved in the reaction and little precipitation in the solution. The distribution diagrams of thin film elements illustrate that the film growth rate changes on the increase, decrease, and increase with the increase of cadmium sulfate concentration. XRD studies exhibit the crystal structure of the film is hexagonal phase, and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M. Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value Eg can be expressed by the equation Eg(x)=0.59x2+0.69x+2.43. Increasing the zinc content can increase the optical band gap, the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration, however, all of them have good transmittance. At a concentration of 0.005 M, the thin film has good absorbance in the 300 - 800 nm range, 80% transmittance, and band gap value of 3.24 eV, which is suitable for use as a buffer layer for solar cells.

Optimization of Cr Seed Layer Effect for Surface Roughness of As-Deposited Silver Film using Electron Beam Deposition Method

2020 ◽  
Vol 42 (1) ◽  
pp. 23-23
Author(s):  
Naseem Abbas Naseem Abbas ◽  
Muzamil Hussain Muzamil Hussain ◽  
Nida Zahra Nida Zahra ◽  
Hassaan Ahmad Hassaan Ahmad ◽  
Syed Muhammad Zain Mehdi Syed Muhammad Zain Mehdi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electron Beam ◽  
Layer Thickness ◽  
Borosilicate Glass ◽  
Seed Layer ◽  
Deposition Method ◽  
Different Thickness ◽  
Beam Deposition

The surface roughness is an important parameter in determining the physical properties and quality of thin films deposited by physical vapor deposition (PVD) method. The presence of an intermediate layer between metallic nanoparticles and substrate significantly promotes the adhesion and reduces the surface roughness. In this article, we have investigated the effect of Chromium (Cr) seed layer to optimize the surface roughness on the growth of as-deposited silver (Ag) film using borosilicate glass and silicon wafer substrates. For this purpose, Ag thin films were deposited with a Cr seed layer of different thickness on borosilicate glass and silicon wafer substrates using an electron beam (E-Beam) deposition method. The Cr thin film of different thickness ranging from 1 nm to 6 nm was thermally evaporated and pure Ag with the same thickness was evaporated at the same rate on previously coated substrates. The deposition of the nanostructured thin film was confirmed by UV-Vis and XRD characterizations. The difference in transmittance for uncoated and coated substrates ensured the deposition. The presence of pure Ag crystalline phase was confirmed by XRD pattern. Surface roughness was measured using Atomic Force Microscopy (AFM) and the conductance was measured using 4-probe conductivity method. The density of nanoparticles and smoothness were visualized from two dimensional (2D) and three dimensional (3D) surface height histograms of representative AFM images. The quantitative roughness was measured in terms of root mean square (RMS) roughness and mean roughness. The high dense and smoother thin films were found for ~2-4 nm Cr layer thickness in case of the glass substrate. The slight increase in roughness was observed for ~1-6 nm Cr layer thickness in case of the silicon substrate. The dependence of the conductivity of thin films on surface roughness is investigated to verify the effect of surface roughness on different applications of Ag thin film. The conductance results have been analyzed as; for a glass substrate, conductivity was maximum for thin films containing ~2 nm Cr seed layer thickness, while for silicon substrate the maximum conductivity was found for the thin film containing ~1 nm Cr seed layer.

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