Creation of a perovskite LaFeO3 network as photoelectrode material using a salicylate-ligating lanthanum–iron complex precursor

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6382-6386 ◽  
Author(s):  
Kazuhiro Manseki ◽  
Amelia Amir ◽  
Takashi Sugiura
Keyword(s):  
Crystal Growth ◽  
Network Structure ◽  
Iron Complex ◽  
Complex Precursor

Thermolysis of the heterometal LaFe complex precusor allowed the enhancement of crystal growth to create a LaFeO3 network structure.

Crystal Growth of Laser Annealed Polycrystalline Silicon as a Function of Hydrogen Content of Precursors

2000 ◽  
Vol 621 ◽  
Author(s):  
Takuo Tamura ◽  
Kiyoshi Ogata ◽  
Michiko Takahashi ◽  
Kenkichi Suzuki ◽  
Hironaru Yamaguchi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Lattice Constant ◽  
Hydrogen Content ◽  
Network Structure ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Laser Energy ◽  
Diffraction Measurement ◽  
Laser Crystallization

ABSTRACTThe influence of hydrogen in a precursor on excimer laser crystallization behavior was investigated. The crystal orientation and lattice constant of polycrystalline silicon films were analyzed by X-ray diffraction measurement. An intensity ratio of 111 to 220 was used as an index of the (111) preferred orientation. A randomly oriented film with an index of 2 at lower energy density changed to the highly (111) oriented phase with an index of more than 15 at higher energy density. It was observed in the PE-CVD films that increasing the hydrogen in the precursor films decreased the orientation index. The lattice constant of the laser-annealed PE-CVD silicon was found to be larger than that of the PVD silicon and to decrease with an increase in laser energy density. The network structure of as-deposited PVD film with less hydrogen content was denser than that of as-deposited PE-CVD. The network structure of the precursor strongly affected the crystal growth, and the structure of the ELC poly-Si was still affected by the precursors, even though the hydrogen content decreased after laser annealing.

Montmorillonite Dendrites

1974 ◽  
Vol 32 ◽  
pp. 454-455
Author(s):  
Necip Güven ◽  
Rodney W. Pease
Keyword(s):  
Crystal Growth ◽  
Growth Mechanism ◽  
Growth Front ◽  
Morphological Features ◽  
Dendritic Crystal ◽  
Crystal Growth Mechanism

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

Cristal-growth dynamics of n-doped gaAs

1992 ◽  
Vol 50 (2) ◽  
pp. 1544-1545
Author(s):  
Pham V. Huong ◽  
Stéphanie Bouchet ◽  
Jean-Claude Launay
Keyword(s):  
Crystal Growth ◽  
Spatial Resolution ◽  
Epitaxial Layer ◽  
Outer Surface ◽  
Gaas Substrate ◽  
Structural Modification ◽  
Growth Dynamics ◽  
Argon Laser ◽  
High Anisotropy ◽  
Crystal Gaas

Microstructure of epitaxial layers of doped GaAs and its crystal growth dynamics on single crystal GaAs substrate were studied by Raman microspectroscopy with a Dilor OMARS instrument equipped with a 1024 photodiode multichannel detector and a ion-argon laser Spectra-Physics emitting at 514.5 nm.The spatial resolution of this technique, less than 1 μm2, allows the recording of Raman spectra at several spots in function of thickness, from the substrate to the outer deposit, including areas around the interface (Fig.l).The high anisotropy of the LO and TO Raman bands is indicative of the orientation of the epitaxial layer as well as of the structural modification in the deposit and in the substrate at the interface.With Sn doped, the epitaxial layer also presents plasmon in Raman scattering. This fact is already very well known, but we additionally observed that its frequency increases with the thickness of the deposit. For a sample with electron density 1020 cm-3, the plasmon L+ appears at 930 and 790 cm-1 near the outer surface.

Crystal Structures of Tetragonal NdPc2O and NdPc2Clx,O1-x Obtained from NdPc2H by Anodic Crystal Growth

1988 ◽  
Vol 156 (1) ◽  
pp. 247-256 ◽  
Author(s):  
Mireille Mossoyan-deneux ◽  
David Benlian ◽  
Andre Baldy ◽  
Marcel Pierrot
Keyword(s):  
Crystal Growth ◽  
Crystal Structures

An alter-centric perspective on employee innovation: The importance of alters’ creative self-efficacy and network structure.

2017 ◽  
Vol 102 (9) ◽  
pp. 1360-1374 ◽  
Author(s):  
Travis J. Grosser ◽  
Vijaya Venkataramani ◽  
Giuseppe (Joe) Labianca
Keyword(s):  
Network Structure ◽  
Self Efficacy ◽  
Creative Self

EFFECTS OF SOLVENTS AND CELL DESIGN FOR CRYSTAL GROWTH OF ORGANIC METALS

1983 ◽  
Vol 44 (C3) ◽  
pp. C3-1195-C3-1199
Author(s):  
H. Anzai ◽  
T. Moriya ◽  
K. Nozaki ◽  
T. Ukachi ◽  
G. Saito
Keyword(s):  
Crystal Growth ◽  
Cell Design ◽  
Organic Metals
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