scholarly journals The growth and fluorescence of phthalocyanine monolayers, thin films and multilayers on hexagonal boron nitride

2018 ◽  
Vol 54 (85) ◽  
pp. 12021-12024 ◽  
Author(s):  
Manal Alkhamisi ◽  
Vladimir V. Korolkov ◽  
Anton S. Nizovtsev ◽  
James Kerfoot ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Free Base ◽  
Force Microscopy ◽  
Atomic Force

Free-base phthalocyanine forms distinct interfacial phases and thin films on hexagonal boron nitride including a monolayer arrangement as determined using high resolution atomic force microscopy.

Atomic Force Microscopy study of hexagonal boron nitride film growth on 6H-SiC (0001)

2005 ◽  
Vol 202 (1) ◽  
pp. 3-3 ◽  
Author(s):  
Wei Chen ◽  
Kian Ping Loh ◽  
Ming Lin ◽  
Rong Liu ◽  
Andrew T. S. Wee
Keyword(s):  
Atomic Force Microscopy ◽  
Boron Nitride ◽  
Film Growth ◽  
Hexagonal Boron Nitride ◽  
Microscopy Study ◽  
Nitride Film ◽  
Atomic Force Microscopy Study ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yong-Jin Cho ◽  
Alex Summerfield ◽  
Andrew Davies ◽  
Tin S. Cheng ◽  
Emily F. Smith ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Molecular Beam ◽  
Hexagonal Boron Nitride ◽  
Graphite Substrate ◽  
Force Microscopy ◽  
Atomic Force

Abstract We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate.

Hexagonal Boron Nitride Single Crystal Thermal Oxidation and Etching in Air: An Atomic Force Microscopy Study

MRS Advances ◽  
2019 ◽  
Vol 4 (10) ◽  
pp. 601-608
Author(s):  
N. Khan ◽  
E. Nour ◽  
J. Mondoux ◽  
S. Liu ◽  
J.H. Edgar ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Ambient Air ◽  
Microscopy Study ◽  
Deep Oxidation ◽  
Two Dimensional ◽  
Initial Oxidation ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTHexagonal boron nitride (hBN), a two dimensional (2D) material, has emerged as an important substrate and dielectric for electronic, optoelectronic, and photonic devices based on graphene and other atomically thin two dimensional materials. Here we report on the initial oxidation of (0001) hBN single crystals in ambient air as functions of temperature and time, as determined by atomic force microscopy (AFM) and scanning electron microscope with energy dispersive X-ray spectroscopy (SEM/EDS). For oxidation times of 20 minutes, the first evidence of oxidation appears at 900°C, with the formation of shallow, hexagonal-, and irregular-shaped pits that are less than 100 nm across and several nanometer deep. Oxidation at 1100°C for 20 minutes produced 1.0-2.0-micron size pits with flat and pointed bottoms that were approximately hexagonal-shaped, but with rough and irregular edges, and multiple interior steps. Oxidation was not uniform on the surface of hBN, but starts where dislocations in the crystal intersected the surfaces. Pit depth increased linearly with temperature and oxidation times. In addition to the surface pits, small particles formed on the surface. Elemental analysis of the thermally oxidized hBN crystals by SEM/EDS revealed the major elements of these particles were boron and oxygen.

scholarly journals Ultra-high resolution imaging of thin films and single strands of polythiophene using atomic force microscopy

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Vladimir V. Korolkov ◽  
Alex Summerfield ◽  
Alanna Murphy ◽  
David B. Amabilino ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
High Resolution Imaging ◽  
Force Microscopy ◽  
Atomic Force ◽  
Resolution Imaging

CHARACTERIZATION OF CUBIC BORON NITRIDE THIN FILMS DEPOSITED BY RF SPUTTER

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4339-4342 ◽  
Author(s):  
JINXIANG DENG ◽  
GUANGHUA CHEN ◽  
XUEMEI SONG
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Photoelectron Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Cubic Phase ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Fourier Transformation Infrared Spectroscopy

Cubic boron nitride (c-BN) thin films have been deposited on Si substrates by radio frequency sputter. Sputtering target was hot pressed hexagonal boron nitride of 4N purity. Sputtering gas was the mixture of nitrogen and argon. During depositing c-BN thin films, substrates were biased by dc voltage negatively with respect to ground. By optimizing the deposition conditions, the boron nitride (BN) films containing a large amount of cubic phase were obtained. The samples were characterized with Fourier transformation infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). According to FTIR, the cubic phase content of c-BN thin films was evaluated to be 92. The B/N ratio was estimated to be approximately 1 from XPS. The AFM shows that the c-BN thin films delaminated from Si substrates obviously.

scholarly journals Exploring Intramolecular Methyl–Methyl Coupling on a Metal Surface for Edge-Extended Graphene Nanoribbons

2021 ◽  
Vol 03 (02) ◽  
pp. 128-133
Author(s):  
Zijie Qiu ◽  
Qiang Sun ◽  
Shiyong Wang ◽  
Gabriela Borin Barin ◽  
Bastian Dumslaff ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Graphene Nanoribbons ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Methyl Methyl ◽  
Atomic Force ◽  
Edge Extension

Intramolecular methyl–methyl coupling on Au (111) is explored as a new on-surface protocol for edge extension in graphene nanoribbons (GNRs). Characterized by high-resolution scanning tunneling microscopy, noncontact atomic force microscopy, and Raman spectroscopy, the methyl–methyl coupling is proven to indeed proceed at the armchair edges of the GNRs, forming six-membered rings with sp3- or sp2-hybridized carbons.

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force
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