In situ growth of well-ordered NiFe-MOF-74 on Ni foam by Fe2+ induction as an efficient and stable electrocatalyst for water oxidation

2018 ◽  
Vol 54 (51) ◽  
pp. 7046-7049 ◽  
Author(s):  
Jiale Xing ◽  
Kailu Guo ◽  
Zehua Zou ◽  
Minmin Cai ◽  
Jing Du ◽  
...  

Uniform and well-ordered NiFe-MOF-74 was in situ grown on Ni foam by Fe2+ induction, exhibiting enhanced activity toward the OER with a very low overpotential of 223 mV at a current density of 10 mA cm−2.

2016 ◽  
Vol 188 ◽  
pp. 481-498 ◽  
Author(s):  
H. Svengren ◽  
N. Torapava ◽  
I. Athanassiadis ◽  
S. I. Ali ◽  
M. Johnsson

The recently described solid solution (Co,Ni,Mn)3Sb4O6F6has proved stable and efficient as a catalyst for electrocatalytic water oxidation. The end component Co3Sb4O6F6was found to be most efficient, maintaining a current density ofj= 10 mA cm−2at an overpotential of 443 mV with good capability. At this current density, O2and H2were produced in the ratio 1 : 2 without loss of faradaic current against a Pt-cathode. A morphological change in the crystallite surface was observed after 0.5 h, however, even after 64.5 h, the overall shape and size of the small crystallites were unaffected and the electrolyte contained only 0.02 at% Co. It was also possible to conclude fromin situEXAFS measurements that the coordination around Co did not change. The oxofluorides express both hydrophilic and hydrophobic surface sites, incorporate a flexible metalloid element and offer the possibility of a mechanism that differs from other inorganic catalytic pathways previously described.


2018 ◽  
Vol 54 (18) ◽  
pp. 2300-2303 ◽  
Author(s):  
Maowen Xie ◽  
Xiaoli Xiong ◽  
Lin Yang ◽  
Xifeng Shi ◽  
Abdullah M. Asiri ◽  
...  

An Fe-(tetracyanoquinodimethane)2 nanowire array in situ developed on Fe foil (Fe(TCNQ)2/Fe) acts as an efficient and durable electrocatalyst for water oxidation, needing an overpotential of 340 mV to attain a current density of 10 mA cm−2 in 1.0 M KOH.


2019 ◽  
Vol 48 (23) ◽  
pp. 8442-8448 ◽  
Author(s):  
Ailing Yan ◽  
Hao Wan ◽  
Gen Chen ◽  
Ning Zhang ◽  
Wei Ma ◽  
...  

Heterostructured Ni2/3Fe1/3O/Ni4/3Fe2/3P nanoflakes could be successfully synthesized via the partial phosphidation of the oxide precursor, which achieved a current density of 10 mA cm−2 at a low overpotential of 273 mV with a small Tafel slope of 79 mV dec−1, superior to single-phase oxide and phosphide nanoflakes.


2017 ◽  
Vol 2 (7) ◽  
pp. 2230-2234 ◽  
Author(s):  
Ding Tang ◽  
Oluwaniyi Mabayoje ◽  
Yanqing Lai ◽  
Yexiang Liu ◽  
C. Buddie Mullins

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhanwu Lei ◽  
Wenbin Cai ◽  
Yifei Rao ◽  
Kuan Wang ◽  
Yuyuan Jiang ◽  
...  

AbstractSingle-atom catalysts (SACs) have attracted tremendous research interests in various energy-related fields because of their high activity, selectivity and 100% atom utilization. However, it is still a challenge to enhance the intrinsic and specific activity of SACs. Herein, we present an approach to fabricate a high surface distribution density of iridium (Ir) SAC on nickel-iron sulfide nanosheet arrays substrate (Ir1/NFS), which delivers a high water oxidation activity. The Ir1/NFS catalyst offers a low overpotential of ~170 mV at a current density of 10 mA cm−2 and a high turnover frequency of 9.85 s−1 at an overpotential of 300 mV in 1.0 M KOH solution. At the same time, the Ir1/NFS catalyst exhibits a high stability performance, reaching a lifespan up to 350 hours at a current density of 100 mA cm−2. First-principles calculations reveal that the electronic structures of Ir atoms are significantly regulated by the sulfide substrate, endowing an energetically favorable reaction pathway. This work represents a promising strategy to fabricate high surface distribution density single-atom catalysts with high activity and durability for electrochemical water splitting.


2017 ◽  
Vol 4 (3) ◽  
pp. 594-600 ◽  
Author(s):  
Jing Yu ◽  
Fei-Xiang Ma ◽  
Yue Du ◽  
Pan-Pan Wang ◽  
Cheng-Yan Xu ◽  
...  

Small ◽  
2020 ◽  
Vol 16 (44) ◽  
pp. 2004188
Author(s):  
Xiaofeng Zhang ◽  
Feng Yang ◽  
Haixin Chen ◽  
Kun Wang ◽  
Junwei Chen ◽  
...  

Small ◽  
2017 ◽  
Vol 13 (18) ◽  
pp. 1604161 ◽  
Author(s):  
Cheng-Zong Yuan ◽  
Zhong-Ti Sun ◽  
Yi-Fan Jiang ◽  
Zheng-Kun Yang ◽  
Nan Jiang ◽  
...  

1985 ◽  
Vol 53 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
F. H. Sanchez ◽  
H. C. Hayden

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.


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