Mixed-phase bismuth ferrite thin films by chemical solution deposition

2018 ◽  
Vol 6 (11) ◽  
pp. 2882-2888 ◽  
Author(s):  
Qi Zhang ◽  
Hsin-Hui Huang ◽  
Daniel Sando ◽  
Max Summers ◽  
Paul Munroe ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Bismuth Ferrite ◽  
Mixed Phase ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Electromechanical Performance ◽  
Ferrite Thin Films

Epitaxial mixed-phase BFO//LAO thin films with enhanced electromechanical performance were successfully synthesized by chemical solution deposition.

Tuning Phase Fractions and Leakage Properties of Chemical Solution Deposition-Derived Mixed-Phase BiFeO3 Thin Films

2020 ◽  
Vol 2 (12) ◽  
pp. 4099-4110
Author(s):  
Jinling Zhou ◽  
Daniel Sando ◽  
Xuan Cheng ◽  
Zhijun Ma ◽  
Nagarajan Valanoor ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Mixed Phase ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Effect of 3d Transition Metals Addition on the Ferroelectric Properties in Bi Ferrite Thin Films

2007 ◽  
Vol 1034 ◽  
Author(s):  
Hiroshi Naganuma ◽  
Jun Miura ◽  
Soichiro Okamura
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Leakage Current ◽  
Chemical Solution Deposition ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Diffraction Peaks ◽  
Ferrite Thin Films ◽  
Co Addition

AbstractCr, Mn, Co, Ni and Cu of 5 at % s added BiFeO3 films were fabricated by chemical solution deposition on 111-textured Pt/Ti/SiO2/Si(100) substrates. Only the diffraction peaks attributed to BiFeO3 structure could obtain except the Ni and Cr additions. The BiFeO3 films became almost amorphous by adding Ni, and non ferroelectric Bi7CrO12.5 phase was formed by adding Cr. AFM images indicated the surface morphology of the films was drastically changed by the additives. The leakage current was reduced by adding Mn, Cu and Co, although the electric coercive field increased in the case of Co addition. Therefore, it could be concluded that Mn and Cu additives improved not only the leakage current properties but also the ferroelectric properties in the course of CSD process. It should be noted that this is the first report showing the improvement of ferroelectricity of BiFeO3 films by adding Cu.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique

1999 ◽  
Vol 14 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Seung-Hyun Kim ◽  
D. J. Kim ◽  
K. M. Lee ◽  
M. Park ◽  
A. I. Kingon ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Low Voltage ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Voltage Saturation

Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.

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