Ultrastable red-emitting phosphor-in-glass for superior high-power artificial plant growth LEDs

2018 ◽  
Vol 6 (7) ◽  
pp. 1738-1745 ◽  
Author(s):  
Jiankun Deng ◽  
Haoran Zhang ◽  
Xuejie Zhang ◽  
Yinjian Zheng ◽  
Junqiang Yuan ◽  
...  

Red-emitting phosphor-in-glass with excellent thermal stability was prepared, showing great potential for high-power LED plant-growth lamps with high color stability.

2020 ◽  
Vol 8 (46) ◽  
pp. 16427-16435
Author(s):  
Yuelong Ma ◽  
Le Zhang ◽  
Tianyuan Zhou ◽  
Chen Hou ◽  
Jian Kang ◽  
...  

Transparent ceramics (TCs) with high quantum efficiency and excellent thermal stability are essential for the applications in high-power remote excitation white light-emitting diode or laser diode (LED/LD) lighting devices as color convertors.


RSC Advances ◽  
2018 ◽  
Vol 8 (17) ◽  
pp. 9049-9056 ◽  
Author(s):  
X. X. Shang ◽  
S. Duan ◽  
M. Zhang ◽  
X. Y. Cao ◽  
K. Zheng ◽  
...  

UV-curable ladder-like polysiloxane was constructed to integrate high RI (1.61/450 nm) with high thermal stability etc. for high power LED encapsulation.


RSC Advances ◽  
2018 ◽  
Vol 8 (41) ◽  
pp. 23323-23331 ◽  
Author(s):  
G. Annadurai ◽  
Balaji Devakumar ◽  
Heng Guo ◽  
R. Vijayakumar ◽  
Bin Li ◽  
...  

A novel Ba2Y5B5O17:Eu3+ red-emitting phosphor with high color purity, high quantum efficiency and excellent thermal stability was developed.


RSC Advances ◽  
2018 ◽  
Vol 8 (71) ◽  
pp. 40693-40700 ◽  
Author(s):  
Wasim ullah Khan ◽  
Sunilkumar Baburao Mane ◽  
Salim ullah Khan ◽  
Dongdong Zhou ◽  
Dilfaraz Khan ◽  
...  

Ca3Lu(AlO)3(BO3)4 : Sm3+: a novel red-emitting phosphor with high colour purity up to 98.53% and excellent thermal stability (the red emission intensity of CLAB : 0.05Sm3+ at 425 K is 86.6% of that at 300 K) for NUV-based warm white LEDs.


RSC Advances ◽  
2016 ◽  
Vol 6 (80) ◽  
pp. 77059-77065 ◽  
Author(s):  
Fu Du ◽  
Weidong Zhuang ◽  
Ronghui Liu ◽  
Yuanhong Liu ◽  
Jiyou Zhong ◽  
...  

A series of phase pure nitride yellow phosphors La3−xYxSi6N11:Ce3+ with good thermal stability and tunable luminescence properties have been synthesized and the crystal structure was investigated in detail.


2019 ◽  
Vol 44 (24) ◽  
pp. 6057
Author(s):  
Young Ji Park ◽  
Gyu Jin Jeong ◽  
Jin Ho Kim ◽  
Youngjin Lee ◽  
Sun Woog Kim ◽  
...  

Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


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