All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

2018 ◽  
Vol 6 (2) ◽  
pp. 249-256 ◽  
Author(s):  
Young Jun Tak ◽  
Si Joon Kim ◽  
Sera Kwon ◽  
Hee jun Kim ◽  
Kwun-Bum Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Treatment ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Oxide Tft

An all-sputtered oxide TFT process combined with simultaneous ultraviolet and thermal (SUT) treatment for consecutive fabrication processes at low temperatures.

P‐16: Homojunction Indium–Gallium–Zinc Oxide Thin‐Film Transistors by Selective Simultaneous UV and Thermal Treatment

2020 ◽  
Vol 51 (1) ◽  
pp. 1369-1371
Author(s):  
Hyung Tae Kim ◽  
Hyukjoon Yoo ◽  
Jeong Woo Park ◽  
Won-Gi Kim ◽  
Dong Hyun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
P 16 ◽  
Indium Gallium

Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors

2017 ◽  
Vol 5 (2) ◽  
pp. 339-349 ◽  
Author(s):  
Sung Woon Cho ◽  
Da Eun Kim ◽  
Won Jun Kang ◽  
Bora Kim ◽  
Dea Ho Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Treatment ◽  
Thin Film Transistors ◽  
Oxide Films ◽  
Chemical Durability ◽  
Oxide Thin Film ◽  
Large Area ◽  
Solution Processed ◽  
Circuit Integration

The chemical durability of solution-processed oxide films was engineered via Sn-incorporation and thermal-treatment, which was applied for large-area TFT circuit integration.

Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

2014 ◽  
Vol 2 (28) ◽  
pp. 5695-5703 ◽  
Author(s):  
Eun Jin Bae ◽  
Young Hun Kang ◽  
Mijeong Han ◽  
Changjin Lee ◽  
Song Yun Cho
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Solution Process ◽  
The Self ◽  
Oxide Thin Film ◽  
Combustion Chemistry ◽  
Metal Oxide Thin Film

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

High‐performance full transparent tin‐doped zinc oxide thin‐film transistors fabricated on glass at low temperatures

2014 ◽  
Vol 50 (20) ◽  
pp. 1463-1465 ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Nannan Zhao ◽  
Yingying Cong ◽  
Jing Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses

2017 ◽  
Vol 46 ◽  
pp. 93-99
Author(s):  
Jing Xin Jiang ◽  
Da Peng Wang ◽  
Tokiyoshi Matsuda ◽  
Mutsumi Kimura ◽  
Sheng Yang Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Interface Traps ◽  
Screening Length ◽  
Oxide Tft ◽  
Turn On ◽  
The Difference

The electrical properties of bottom-gate amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs) with different channel thicknesses (TITZO) were investigated. The difference between front- and back-channel interface traps influence on subthreshold swing (S) and turn on voltage (Von) of a-ITZO TFTs was further analyzed using device simulation. Variations of front-channel interface traps (Naf) on S and Von were hardly dependent on TITZO. However, variations of S and Von became larger for thinner TITZO TFT when back-channel interface traps (Nabk) varied; which can be explained by considering screening length. Not only Naf but also Nabk are important factors of S and Von to achieve high performance thinner oxide TFT.

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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