Fabrication of ZnO homojunction-based color-switchable bidirectional LEDs by using a hydrothermal growth method

2017 ◽  
Vol 5 (36) ◽  
pp. 9479-9487 ◽  
Author(s):  
Sung-Doo Baek ◽  
Yoann Porte ◽  
Yun Cheol Kim ◽  
Jae-Min Myoung

ZnO homojunction-based LEDs, with variable emission wavelengths depending on bias polarity, have been fabricated using a simple hydrothermal growth method.

2017 ◽  
Vol 34 ◽  
pp. 273-280 ◽  
Author(s):  
Norwahyu Jusoh ◽  
Yin Fong Yeong ◽  
Maisarah Mohamad ◽  
Kok Keong Lau ◽  
Azmi M. Shariff

Materials ◽  
2014 ◽  
Vol 7 (1) ◽  
pp. 430-440 ◽  
Author(s):  
Mazhar Abbasi ◽  
Zafar Ibupoto ◽  
Mushtaque Hussain ◽  
Galia Pozina ◽  
Jun Lu ◽  
...  

2011 ◽  
Vol 11 (11) ◽  
pp. 4831-4836 ◽  
Author(s):  
Yukiaki Ohno ◽  
Koji Tomita ◽  
Yukihiro Komatsubara ◽  
Takaaki Taniguchi ◽  
Ken-ichi Katsumata ◽  
...  

2019 ◽  
Vol 59 ◽  
pp. 104703 ◽  
Author(s):  
Jinfeng Han ◽  
Ying Ha ◽  
Mingyu Guo ◽  
Peipei Zhao ◽  
Qingling Liu ◽  
...  

2012 ◽  
Vol 476-478 ◽  
pp. 881-885
Author(s):  
Tron Min Chen ◽  
Kai Ming Uang ◽  
Shu Kuo Lin

In this study, we reported the fabrication and characterization of a nano hetero junction (NHJ) structure which is synthesized by a 2-step hydrothermal growth (HTG) method. The zinc oxide (ZnO) nano rods (NRs) were grown by the 2-step HTG onto p-type nickel oxide (p-NiO) film e-beam deposited glass substrate to form n-ZnO-NRs/p-NiO NHJs. The electrical properties of the n-ZnO-NRs/p-NiO NHJs show a rectifying behavior of a p-n junction. The optoelectronic properties of the n-ZnO-NRs/ p-NiO NHJs under UV light (366 nm) light with good sensitivity were presented.


2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Yung-Chun Tu ◽  
Shui-Jinn Wang ◽  
Tseng-Hsing Lin ◽  
Chien-Hsiung Hung ◽  
Tsung-Che Tsai ◽  
...  

Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film). The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm) under UV light (365 nm; intensity: 3 mW/cm2) were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG) and 8.8-fold (Ssputter), respectively. The significant gain in sensitivity (SHTG/Ssputter= 630%) of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.


Sign in / Sign up

Export Citation Format

Share Document