Solution-phase growth mechanism of phosphorus-doped MnAs nanoparticles: size, polydispersity and dopant control on the nanoscale

2017 ◽  
Vol 5 (13) ◽  
pp. 3352-3358 ◽  
Author(s):  
Roshini Pimmachcharige ◽  
Yanhua Zhang ◽  
Rajesh Regmi ◽  
Gavin Lawes ◽  
Stephanie L. Brock
Keyword(s):  
Size Distribution ◽  
Growth Mechanism ◽  
Rapid Quenching ◽  
Solution Phase ◽  
Trioctylphosphine Oxide ◽  
Phase Growth ◽  
Phosphorus Doped

Rapid quenching of MnAs nanoparticle syntheses leads to time-controlled P-incorporation into the lattice (from the trioctylphosphine oxide solvent) and focusing of the size distribution.

Anisotropic manganese antimonide nanoparticle formation by solution–solid–solid growth mechanism: consequence of sodium borohydride addition towards reduced surface oxidation and enhanced magnetic moment

Nanoscale ◽  
2019 ◽  
Vol 11 (14) ◽  
pp. 6886-6896 ◽  
Author(s):  
Malsha A. Hettiarachchi ◽  
Ehab Abdelhamid ◽  
Boris Nadgorny ◽  
Stephanie L. Brock
Keyword(s):  
Growth Mechanism ◽  
Sodium Borohydride ◽  
Magnetic Moment ◽  
Surface Oxidation ◽  
Solution Phase ◽  
Synthetic Route ◽  
Nanoparticle Formation ◽  
Reduced Surface

Novel synthetic route to synthesize solution-phase anisotropic MnSb nanoparticles was developed and the solution–solid–solid growth mechanism was elucidated.

Growth mechanism during selective epitaxy of p-doped SiC using VLS transport

2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Liquid Droplets ◽  
Growth Mechanisms ◽  
Phase Growth ◽  
Selective Epitaxial Growth ◽  
Standard Configuration ◽  
Liquid Phase Growth

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.

Colloidal Synthesis of Single-Layer MSe2(M = Mo, W) Nanosheets via Anisotropic Solution-Phase Growth Approach

2015 ◽  
Vol 137 (23) ◽  
pp. 7266-7269 ◽  
Author(s):  
Wonil Jung ◽  
Sujeong Lee ◽  
Dongwon Yoo ◽  
Sohee Jeong ◽  
Pere Miró ◽  
...  
Keyword(s):  
Single Layer ◽  
Solution Phase ◽  
Colloidal Synthesis ◽  
Phase Growth ◽  
Anisotropic Solution ◽  
Growth Approach

Organic Single-Crystal Arrays from Solution-Phase Growth Using Micropattern with Nucleation Control Region

2012 ◽  
Vol 24 (8) ◽  
pp. 1117-1122 ◽  
Author(s):  
Osamu Goto ◽  
Shigetaka Tomiya ◽  
Yosuke Murakami ◽  
Akira Shinozaki ◽  
Akira Toda ◽  
...  
Keyword(s):  
Single Crystal ◽  
Control Region ◽  
Solution Phase ◽  
Phase Growth ◽  
Organic Single Crystal

Microwave-assisted solution-phase preparation and growth mechanism of FeMoO4hierarchical hollow spheres

CrystEngComm ◽  
2010 ◽  
Vol 12 (1) ◽  
pp. 207-210 ◽  
Author(s):  
Lei Zhang ◽  
Xiao-Feng Cao ◽  
Ying-Li Ma ◽  
Xue-Tai Chen ◽  
Zi-Ling Xue
Keyword(s):  
Growth Mechanism ◽  
Hollow Spheres ◽  
Solution Phase ◽  
Microwave Assisted
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