Enhancing field-effect mobility and maintaining solid-state emission by incorporating 2,6-diphenyl substitution to 9,10-bis(phenylethynyl)anthracene

2017 ◽  
Vol 5 (10) ◽  
pp. 2519-2523 ◽  
Author(s):  
Jie Liu ◽  
Jinyu Liu ◽  
Zichao Zhang ◽  
Chunhui Xu ◽  
Qingyuan Li ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Mobility

2,6-Diphenyl-9,10-bis(phenylethynyl)anthracene demonstrates improved mobility and comparable solid-state emission compared with 9,10-bis(phenylethynyl)anthracene, suggesting it could be a new and better integrated optoelectronic organic semiconductor.

Cover Picture: Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility (Adv. Mater. 19/2005)

2005 ◽  
Vol 17 (19) ◽  
pp. NA-NA
Author(s):  
D. M. DeLongchamp ◽  
S. Sambasivan ◽  
D. A. Fischer ◽  
E. K. Lin ◽  
P. Chang ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Film Structure ◽  
Semiconductor Film ◽  
Field Effect Mobility

Thermal Annealing Effect on the Thermal and Electrical Properties of Organic Semiconductor Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1637-1643 ◽  
Author(s):  
Xinyu Wang ◽  
Boyu Peng ◽  
Paddy Chan
Keyword(s):  
Thermal Conductivity ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Annealing Temperature ◽  
Waste Heat ◽  
Annealing Effect ◽  
Field Effect Mobility ◽  
Thermal And Electrical Properties

ABSTRACTThe thermal and electrical properties of organic semiconductor are playing critical roles in the device applications especially on the devices with large area. Although the effect may be minor in a single device like field effect transistors, the unwanted waste heat would cause much more severe problems in large-scale devices as the power density will go up significantly. The waste heat would lead to performance degradation or even failure of the devices, and thus a more detailed study on the thermal conductivity and carrier mobility of the organic thin film would be beneficial to predict the limits of the device or design a thermally stable device. Here we explore the thermal annealing effect on the thermal and electrical properties of the small molecule organic semiconductor, dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). After the post deposition thermal annealing, the grain size of the film increases and in-plane crystallinity improves while cross-plane crystallinity keeps relatively constant. We demonstrated the cross-plane thermal conductivity is independent of the thermal annealing temperature and high annealing temperature will reduce the space-charge-limited current (SCLC) mobility. When the annealing temperature increase from 24 °C to 140 °C, the field effect mobility shows a gradual increase while the threshold voltage shifts from positive to negative. The different dependence of the SCLC mobility and field effect mobility on the annealing temperature suggest the improvement of the film crystallinity after thermal annealing is not the only dominating effect. Our investigation provides the constructive information to tune the thermal and electrical properties of organic semiconductors.

scholarly journals 2,3-Thienoimide-ended oligothiophenes as ambipolar semiconductors for multifunctional single-layer light-emitting transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15048-15066
Author(s):  
Mario Prosa ◽  
Salvatore Moschetto ◽  
Emilia Benvenuti ◽  
Massimo Zambianchi ◽  
Michele Muccini ◽  
...  
Keyword(s):  
Solid State ◽  
Self Assembly ◽  
Field Effect ◽  
Single Layer ◽  
Field Effect Mobility ◽  
Light Emitting ◽  
Light Emitting Transistors

In view of developing multifunctional OLETs, 2,3-thienoimide-ended oligothiophenes are proposed as ideal candidates to effectively ensure good ambipolar field-effect mobility, self-assembly capability and high luminescence in solid state.

Direct Correlation of Organic Semiconductor Film Structure to Field-Effect Mobility

2005 ◽  
Vol 17 (19) ◽  
pp. 2340-2344 ◽  
Author(s):  
D. M. DeLongchamp ◽  
S. Sambasivan ◽  
D. A. Fischer ◽  
E. K. Lin ◽  
P. Chang ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Film Structure ◽  
Semiconductor Film ◽  
Field Effect Mobility

Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors

2012 ◽  
Vol 51 (16) ◽  
pp. 3837-3841 ◽  
Author(s):  
Afshin Dadvand ◽  
Andrey G. Moiseev ◽  
Kosuke Sawabe ◽  
Wei-Hsin Sun ◽  
Brandon Djukic ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
State Luminescence

Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors

2012 ◽  
Vol 124 (16) ◽  
pp. 3903-3907 ◽  
Author(s):  
Afshin Dadvand ◽  
Andrey G. Moiseev ◽  
Kosuke Sawabe ◽  
Wei-Hsin Sun ◽  
Brandon Djukic ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
State Luminescence

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals Mercury-Mediated Organic Semiconductor Surface Doping Monitored by Electrolyte-Gated Field-Effect Transistors

2017 ◽  
Vol 27 (46) ◽  
pp. 1703899 ◽  
Author(s):  
Qiaoming Zhang ◽  
Francesca Leonardi ◽  
Stefano Casalini ◽  
Marta Mas-Torrent
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Surface ◽  
Surface Doping

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Sign in / Sign up

Export Citation Format

Share Document