Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor
2017 ◽
Vol 5
(23)
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pp. 5818-5823
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Keyword(s):
We show by a combination of experiments and gas phase kinetics modeling that the combinations of precursors with the most well-matched gas phase chemistry kinetics gives the largest area of homoepitaxial growth of SiC.