An integrated organic–inorganic hole transport layer for efficient and stable perovskite solar cells

2018 ◽  
Vol 6 (5) ◽  
pp. 2157-2165 ◽  
Author(s):  
Yaxiong Guo ◽  
Hongwei Lei ◽  
Liangbin Xiong ◽  
Borui Li ◽  
Guojia Fang

Conjugated polymer FBT-Th4 and evaporation deposited CuxO integrated hole transporting materials have been fabricated for efficient and stable perovskite solar cells.

Nanoscale ◽  
2019 ◽  
Vol 11 (41) ◽  
pp. 19586-19594 ◽  
Author(s):  
Hannah Kwon ◽  
Ju Won Lim ◽  
Jinyoung Han ◽  
Li Na Quan ◽  
Dawoon Kim ◽  
...  

Designing an efficient and stable hole transport layer (HTL) material is one of the essential ways to improve the performance of organic–inorganic perovskite solar cells (PSCs).


2019 ◽  
Vol 7 (11) ◽  
pp. 5934-5937 ◽  
Author(s):  
Po-Han Lin ◽  
Kun-Mu Lee ◽  
Chang-Chieh Ting ◽  
Ching-Yuan Liu

Perovskite solar cells using a new spirobifluorene core-based oligoaryl as the hole-transport layer display 18.6% efficiency without any device oxidation process.


2020 ◽  
Vol 4 (1) ◽  
pp. 21
Author(s):  
Ashique Kotta ◽  
Hyung-Kee Seo

Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing future generation solar cells, due to their high efficiency exceeding 25%. For inverted type perovskite solar cells, the hole transporting layer plays a crucial role in improving the efficiency and stability of the perovskite solar cells by modifying band alignment, electric conductivity, and interfacial recombination losses. Here, vanadium doped NiO is selected as a hole transporting layer to study the impact of V dopant on the optoelectronic properties of NiO and photovoltaic performance. The prepared materials are characterized using XRD, SEM, TEM, and XPS. A TEM micrograph confirms that p-type materials have a small spherical dot structure. The V-doped NiO, used as a hole-extraction layer, can be prepared by a simple solvothermal decomposition method. The presence of V in the NiO layer has an influence on the conductivity of the NiO layer. Besides, synthesized p-type material can be used to fabricate a relatively low processing temperature, and has the advantage of a wide choice of transparent conductive oxide substrate. As a result, an inverted type planar perovskite solar cell incorporating of vanadium in NiO hole-transport layer improves the power conversion efficiency. The photovoltaic property of the prepared solar cell is measured under AM 1.5 G simulated light. The photocurrent density is 21.09 mA/cm2, open-circuit voltage is 1.04 V, and the fill factor is 0.63. As a result, the overall power conversion efficiency reaches 13.82%.


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