Combination of four oxadiazole rings for the generation of energetic materials with high detonation performance, low sensitivity and excellent thermal stability

2017 ◽  
Vol 5 (22) ◽  
pp. 11063-11070 ◽  
Author(s):  
Qi Sun ◽  
Cheng Shen ◽  
Xin Li ◽  
Qiuhan Lin ◽  
Ming Lu
Keyword(s):  
Thermal Stability ◽  
Energetic Materials ◽  
Detonation Performance ◽  
Excellent Thermal Stability ◽  
Low Sensitivity

Energetic materials, which are comprised of four oxadiazole rings and linked by three different bridges ([–NH–NH–], [–NN–], and [–NN(O)–]) are developed.

Nitrogen-rich salts of 1-aminotetrazol-5-one: oxygen-containing insensitive energetic materials with high thermal stability

RSC Advances ◽  
2015 ◽  
Vol 5 (74) ◽  
pp. 60005-60014 ◽  
Author(s):  
Xin Yin ◽  
Jin-Ting Wu ◽  
Xin Jin ◽  
Cai-Xia Xu ◽  
Piao He ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Energetic Materials ◽  
High Thermal Stability ◽  
Detonation Performance ◽  
Good Balance ◽  
Ionic Salts ◽  
Low Sensitivity

Energetic ionic salts based on ATO exhibit a good balance between low sensitivity and high detonation performance.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

THERMAL STABILITY AND COMBUSTION BEHAVIORS OF ENERGETIC MATERIALS BASED ON A NEW HETEROCYCLE AZASYDNONE

2018 ◽  
Vol 17 (2) ◽  
pp. 147-170 ◽  
Author(s):  
Valery V. Serushkin ◽  
Valery P. Sinditskii ◽  
Sergey A. Filatov ◽  
P. D. Kulagina ◽  
V. T. Nguyen ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Energetic Materials ◽  
Combustion Behaviors

scholarly journals Boosted piezoelectricity with excellent thermal stability in tetragonal NaNbO3-based ceramics

2020 ◽  
Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Temperature Stability ◽  
Lead Free ◽  
Excellent Thermal Stability ◽  
Lead Free Ceramics ◽  
Piezoelectric Performance

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...

Series of AzTO-Based Energetic Materials: Effect of Different π–π Stacking Modes on Their Thermal Stability and Sensitivity

Langmuir ◽  
2021 ◽  
Author(s):  
Jinhao Zhang ◽  
Bo Jin ◽  
Yulan Song ◽  
Wenjia Hao ◽  
Jiao Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Energetic Materials ◽  
Π Stacking

scholarly journals Molecular Dynamics Simulation of the Influence of RDX Internal Defects on Sensitivity

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 329
Author(s):  
Pengmin Yan ◽  
Xue Zhao ◽  
Jiuhou Rui ◽  
Juan Zhao ◽  
Min Xu ◽  
...  
Keyword(s):  
Energetic Materials ◽  
Low Cost ◽  
Relative Sensitivity ◽  
Dynamics Simulation ◽  
Safety Properties ◽  
Internal Defects ◽  
X Ray ◽  
X Ray Computed ◽  
Low Sensitivity ◽  
Higher Sensitivity

The internal defect is an important factor that could influence the energy and safety properties of energetic materials. RDX samples of two qualities were characterized and simulated to reveal the influence of different defects on sensitivity. The internal defects were characterized with optical microscopy, Raman spectroscopy and microfocus X-ray computed tomography technology. The results show that high-density RDX has fewer defects and a more uniform distribution. Based on the characterization results, defect models with different defect rates and distribution were established. The simulation results show that the models with fewer internal defects lead to shorter N-NO2 maximum bond lengths and greater cohesive energy density (CED). The maximum bond length and CED can be used as the criterion for the relative sensitivity of RDX, and therefore defect models doped with different solvents are established. The results show that the models doped with propylene carbonate and acetone lead to higher sensitivity. This may help to select the solvent to prepare low-sensitivity RDX. The results reported in this paper are aiming at the development of a more convenient and low-cost method for studying the influence of internal defects on the sensitivity of energetic materials.

scholarly journals Taming nitroformate through encapsulation with nitrogen-rich hydrogen-bonded organic frameworks

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jichuan Zhang ◽  
Yongan Feng ◽  
Richard J. Staples ◽  
Jiaheng Zhang ◽  
Jean’ne M. Shreeve
Keyword(s):  
Thermal Stability ◽  
Hydrogen Bonds ◽  
Self Assembly ◽  
Energetic Materials ◽  
Decomposition Temperature ◽  
High Oxygen Content ◽  
The Poor ◽  
Simple Preparation ◽  
First Time ◽  
Hydrogen Bonded

AbstractOwing to its simple preparation and high oxygen content, nitroformate [−C(NO2)3, NF] is an extremely attractive oxidant component for propellants and explosives. However, the poor thermostability of NF-based derivatives has been an unconquerable barrier for more than 150 years, thus hindering its application. In this study, the first example of a nitrogen-rich hydrogen-bonded organic framework (HOF-NF) is designed and constructed through self-assembly in energetic materials, in which NF anions are trapped in pores of the resulting framework via the dual force of ionic and hydrogen bonds from the strengthened framework. These factors lead to the decomposition temperature of the resulting HOF-NF moiety being 200 °C, which exceeds the challenge of thermal stability over 180 °C for the first time among NF-based compounds. A large number of NF-based compounds with high stabilities and excellent properties can be designed and synthesized on the basis of this work.

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