Thermal stability and enhanced thermoelectric properties of the tetragonal tungsten bronzes Nb8−xW9+xO47 (0 < x < 5)

2017 ◽  
Vol 5 (20) ◽  
pp. 9768-9774 ◽  
Author(s):  
G. Cerretti ◽  
M. Schrade ◽  
X. Song ◽  
B. Balke ◽  
H. Lu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Stability ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Low Thermal Conductivity

Engineering of nanoscaled structures allows to control the electrical and thermal transport in solids for thermoelectric applications where a combination of low thermal conductivity and low electrical resistivity is required.

Thermoelectric properties and thermal stability of layered chalcogenides, TlScQ2, Q = Se, Te

2017 ◽  
Vol 46 (48) ◽  
pp. 17053-17060 ◽  
Author(s):  
Vijayakumar Sajitha Aswathy ◽  
Cheriyedath Raj Sankar ◽  
Manoj Raama Varma ◽  
Abdeljalil Assoud ◽  
Mario Bieringer ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Stability ◽  
Band Structure ◽  
Thermoelectric Properties ◽  
Layered Chalcogenides ◽  
Low Thermal Conductivity ◽  
Structure Characteristics ◽  
Thermal Stability Of

The layered chalcogenides, TlScQ2 (Q = Se, Te), possess intriguing band structure characteristics and very low thermal conductivity.

Sn1−xSe thin films with low thermal conductivity: role of stoichiometric deviation in thermal transport

2018 ◽  
Vol 6 (37) ◽  
pp. 10083-10087 ◽  
Author(s):  
Giuk Jeong ◽  
Yoon Hwan Jaung ◽  
Jekyung Kim ◽  
Jae Yong Song ◽  
Byungha Shin
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Low Thermal Conductivity ◽  
Tin Selenide ◽  
Polycrystalline Thin Films

Tin selenide (Sn1−xSe) polycrystalline thin films were prepared by thermal co-evaporation, and the thermoelectric properties of the Sn1−xSe thin films were investigated.

Thermoelectric properties of the Al-TM-Si (TM = Mn, Re) 1/1-cubic approximant

2003 ◽  
Vol 805 ◽  
Author(s):  
Tsunehiro Takeuchi ◽  
Toshio Otagiri ◽  
Hiroki Sakagami ◽  
Uichiro Mizutani
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Low Thermal Conductivity ◽  
Dimensionless Figure Of Merit

ABSTRACTThe electrical resistivity, thermoelectric power, and thermal conductivity were investigated for the Al71.6-xMn 17.4Six and Al71.6-xRe 17.4Six (7 ≤ x ≤ 12) 1/1-cubic approximants. A large thermoelectric power ranging from -40 to 90 μV/K and a low thermal conductivity less than 3 W/K·cm were observed at room temperatures. The electrical resistivity at room temperature for these approximants was kept below 4,000 μΩcm, that is much smaller than that in the corresponding quasicrystals. As a result of the large thermoelectric power, the low thermal conductivity, and the low electrical resistivity, large dimensionless figure of merit ZT = 0.10 (n-type) and 0.07 (p-type) were achieved for the Al71.6Re17.4Si11 and Al71.6Mn17.4Si11 at room temperature, respectively.

Structure and Thermoelectric Properties of New Quaternary Tin and Lead Bismuth Selenides, K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1+xSn5-xBi11+xSe22

2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Thermoelectric Properties ◽  
Three Dimensional ◽  
Structure Type ◽  
Narrow Gap ◽  
Low Thermal Conductivity ◽  
Seebeck Coefficients ◽  
Metal Atoms ◽  
Anionic Framework

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.

Thermoelectric properties of PEDOT:PSS aerogel secondary-doped in supercritical CO2 atmosphere with low thermal conductivity

Polymer ◽  
2020 ◽  
Vol 206 ◽  
pp. 122912
Author(s):  
Naoya Yanagishima ◽  
Shinji Kanehashi ◽  
Hiromu Saito ◽  
Kenji Ogino ◽  
Takeshi Shimomura
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Supercritical Co2 ◽  
Low Thermal Conductivity ◽  
Co2 Atmosphere

Effects of Nb doping on thermoelectric properties of Zn4Sb3 at high temperatures

2009 ◽  
Vol 24 (2) ◽  
pp. 430-435 ◽  
Author(s):  
D. Li ◽  
H.H. Hng ◽  
J. Ma ◽  
X.Y. Qin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
High Temperatures ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Temperature Range ◽  
A Value ◽  
Nb Doping ◽  
Thermal Conductivities

The thermoelectric properties of Nb-doped Zn4Sb3 compounds, (Zn1–xNbx)4Sb3 (x = 0, 0.005, and 0.01), were investigated at temperatures ranging from 300 to 685 K. The results showed that by substituting Zn with Nb, the thermal conductivities of all the Nb-doped compounds were lower than that of the pristine β-Zn4Sb3. Among the compounds studied, the lightly substituted (Zn0.995Nb0.005)4Sb3 compound exhibited the best thermoelectric performance due to the improvement in both its electrical resistivity and thermal conductivity. Its figure of merit, ZT, was greater than the undoped Zn4Sb3 compound for the temperature range investigated. In particular, the ZT of (Zn0.995Nb0.005)4Sb3 reached a value of 1.1 at 680 K, which was 69% greater than that of the undoped Zn4Sb3 obtained in this study.

La2O3 Doped Y2O3 Stabilized ZrO2 TBC Prepared by EB-PVD

2006 ◽  
Vol 317-318 ◽  
pp. 501-504 ◽  
Author(s):  
Mineaki Matsumoto ◽  
Norio Yamaguchi ◽  
Hideaki Matsubara
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
High Resistance ◽  
Thermal Transport ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Microstructural Observation ◽  
Low Thermal Conductivity ◽  
Ysz Coating

Effect of La2O3 addition on thermal conductivity and high temperature stability of YSZ coating produced by EB-PVD was investigated. La2O3 was selected as an additive because it had a significant effect on suppressing densification of YSZ. The developed coating showed extremely low thermal conductivity as well as high resistance to sintering. Microstructural observation revealed that the coating had fine feather-like subcolumns and nanopores, which contributed to limit thermal transport. These nanostructures were thought to be formed by suppressing densification during deposition.

Simultaneous enhancements in the Seebeck coefficient and conductivity of PEDOT:PSS by blending ferroelectric BaTiO3 nanoparticles

2021 ◽  
Author(s):  
Chang'an Li ◽  
Xin Guan ◽  
Shizhong Yue ◽  
Xi Zu Wang ◽  
Jianmin Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Low Cost ◽  
Low Thermal Conductivity ◽  
Low Toxicity ◽  
Batio3 Nanoparticles

Thermoelectric polymers have attracted great attention because of their unique merits including low thermal conductivity, low cost, non- or low toxicity and high mechanical flexibility. However, their thermoelectric properties particularly...

Layered tellurides: stacking faults induce low thermal conductivity in the new In2Ge2Te6 and thermoelectric properties of related compounds

2017 ◽  
Vol 5 (36) ◽  
pp. 19406-19415 ◽  
Author(s):  
Robin Lefèvre ◽  
David Berthebaud ◽  
Oleg Lebedev ◽  
Olivier Pérez ◽  
Célia Castro ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Stacking Faults ◽  
Layered Compound ◽  
Low Thermal Conductivity ◽  
Related Compounds

A new ternary layered compound In2Ge2Te6, belonging to the hexatellurogermanate family has been synthesized from the reaction of appropriate amounts of the pure elements at high temperature in sealed silica tubes.

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