Mechanical switching in ferroelectrics by shear stress and its implications on charged domain wall generation and vortex memory devices
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Combining thermodynamic calculation and phase-field simulation, we revealed that mechanical switching of polarization can be achieved in ferroelectric by shear stressviaa simple mechanism where the presence of flexoelectricity is not necessary.
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2010 ◽
Vol 46
(7)
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pp. 781-786
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2015 ◽
Vol 46
(7)
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pp. 3287-3301
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2019 ◽
Vol 27
(5)
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pp. 054002
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