scholarly journals Extremely low coercivity in Fe3O4 thin film grown on Mg2TiO4 (001)

RSC Advances ◽  
2017 ◽  
Vol 7 (69) ◽  
pp. 43648-43654 ◽  
Author(s):  
X. H. Liu ◽  
W. Liu ◽  
Z. D. Zhang
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Room Temperature ◽  
Verwey Transition ◽  
Fe3o4 Thin Film ◽  
Crystal Bulk

The Fe3O4 film grown on Mg2TiO4 (001) shows an extremely small coercivity as low as around 7 Oe from the Verwey transition to room temperature. This low coercivity is close to that of the single-crystal bulk but several times smaller than that of the sample on MgO (001).

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

scholarly journals Mediating exchange bias by Verwey transition in CoO/Fe3O4 thin film

2018 ◽  
Vol 123 (8) ◽  
pp. 083903 ◽  
Author(s):  
X. H. Liu ◽  
W. Liu ◽  
Z. D. Zhang ◽  
C. F. Chang
Keyword(s):  
Thin Film ◽  
Exchange Bias ◽  
Verwey Transition ◽  
Fe3o4 Thin Film

Charge Transport in Pentacene Thin Film Transistors

2001 ◽  
Vol 665 ◽  
Author(s):  
J. H. Schön ◽  
L. D. Buchholz ◽  
Ch. Kloc ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Nanocrystalline Material ◽  
Hole Mobility ◽  
Grain Sizes

ABSTRACTThe charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

Electrodynamic Properties of Single-Crystal and Thin-Film Strontium Titanate, and Thin-Film Barium Strontium Titanate

1999 ◽  
Vol 603 ◽  
Author(s):  
A.T. Findikoglu ◽  
Q.X. Jia ◽  
C. Kwon ◽  
B.J. Gibbons ◽  
K.Ø. Rasmussen ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Coplanar Waveguide ◽  
Low Frequency ◽  
Dissipation Factor ◽  
Barium Strontium ◽  
Dc Bias

AbstractWe have used a coplanar waveguide structure to study broadband electrodynamic properties of single-crystal and thin-film strontium titanate (STO), and thin-film barium strontium titanate (BSTO). We have implemented low-frequency capacitance (100 Hz - 1 MHz), swept-frequency transmittance (45 MHz - 4 GHz), and time-domain transmittance (dc - several GHz) measurements to determine effective refractive index (or, dielectric constant), and dissipation factor (or, loss tangent) as a function of dc bias (up to 4×106 V/m) and temperature (20 - 300 K). The STO samples used superconducting electrodes and were designed to operate at cryogenic temperatures, whereas BSTO samples used normal conducting electrodes and exhibited optimal performance around room temperature. By using nearly identical electrode geometries for all devices, we were able to conduct a direct comparative study among them, and investigate not only single-crystal vs thin-film, but also cryogenic vs room-temperature applications.

Infrared spectroscopic study of pulsed laser deposited Fe3O4 thin film on Si (111) substrate across Verwey transition temperature

2011 ◽  
Vol 109 (4) ◽  
pp. 043502-043502-3 ◽  
Author(s):  
Ridhi Master ◽  
Shailja Tiwari ◽  
R. J. Choudhary ◽  
U. P. Deshpande ◽  
T. Shripathi ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Temperature ◽  
Spectroscopic Study ◽  
Pulsed Laser ◽  
Infrared Spectroscopic Study ◽  
Verwey Transition ◽  
Infrared Spectroscopic ◽  
Fe3o4 Thin Film

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

Warm and freeze-fracture of cotton seed radicles

1987 ◽  
Vol 45 ◽  
pp. 984-985
Author(s):  
E. L. Vigil ◽  
E. F. Erbe
Keyword(s):  
Thin Film ◽  
Water Vapor ◽  
Fracture Surface ◽  
Membrane Structure ◽  
Room Temperature ◽  
Freeze Fracture ◽  
Longitudinal Axis ◽  
Fracture Plane ◽  
Cotton Seeds ◽  
Condensed Water

In cotton seeds the radicle has 12% moisture content which makes it possible to prepare freeze-fracture replicas without fixation or cryoprotection. For this study we have examined replicas of unfixed radicle tissue fractured at room temperature to obtain data on organelle and membrane structure.Excised radicles from seeds of cotton (Gossyplum hirsutum L. M-8) were fractured at room temperature along the longitudinal axis. The fracture was initiated by spliting the basal end of the excised radicle with a razor. This procedure produced a fracture through the tissue along an unknown fracture plane. The warm fractured radicle halves were placed on a thin film of 100% glycerol on a flat brass cap with fracture surface up. The cap was rapidly plunged into liquid nitrogen and transferred to a freeze- etch unit. The sample was etched for 3 min at -95°C to remove any condensed water vapor and then cooled to -150°C for platinum/carbon evaporation.

Single Crystal Growth of High-Pressure Phases of Ice and Salt Hydrate Far Below the Original Melting Point by Mixing Alcohol: Crystal Structure Determination of Magnesium Chloride Heptahydrate

2020 ◽  
Author(s):  
Keishiro Yamashita ◽  
Kazuki Komatsu ◽  
Hiroyuki Kagi
Keyword(s):  
Crystal Structure ◽  
High Pressure ◽  
Crystal Growth ◽  
Single Crystal ◽  
Room Temperature ◽  
Growth Technique ◽  
Salt Hydrate ◽  
X Ray

An crystal-growth technique for single crystal x-ray structure analysis of high-pressure forms of hydrogen-bonded crystals is proposed. We used alcohol mixture (methanol: ethanol = 4:1 in volumetric ratio), which is a widely used pressure transmitting medium, inhibiting the nucleation and growth of unwanted crystals. In this paper, two kinds of single crystals which have not been obtained using a conventional experimental technique were obtained using this technique: ice VI at 1.99 GPa and MgCl<sub>2</sub>·7H<sub>2</sub>O at 2.50 GPa at room temperature. Here we first report the crystal structure of MgCl2·7H2O. This technique simultaneously meets the requirement of hydrostaticity for high-pressure experiments and has feasibility for further in-situ measurements.

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