scholarly journals Structural, optical and electrical evolution of Al and Ga co-doped ZnO/SiO2/glass thin film: role of laser power density

RSC Advances ◽  
2017 ◽  
Vol 7 (57) ◽  
pp. 35858-35868 ◽  
Author(s):  
Alireza Samavati ◽  
Zahra Samavati ◽  
A. F. Ismail ◽  
M. H. D. Othman ◽  
Mukhlis A. Rahman ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Power Density ◽  
Laser Power ◽  
Laser Power Density ◽  
Sio2 Glass ◽  
Doped Zno ◽  
Co Doped

This study investigates the characteristics of laser annealed thin films of Al–Ga co-doped zinc oxide (ZnO:Al–Ga) nanoparticles on top of SiO2/glass.

Preparation and Microstructure Control of Protein Thin Films Deposited by Pulsed Laser Deposition and Via Colloid Chemical Routes

2003 ◽  
Vol 788 ◽  
Author(s):  
Sayuri Nakayama ◽  
Ichiro Taketani ◽  
Sanshiro Nagare ◽  
Mamoru Senna
Keyword(s):  
Thin Film ◽  
Secondary Structure ◽  
Pulsed Laser Deposition ◽  
Power Density ◽  
Laser Power ◽  
Pulsed Laser ◽  
Laser Power Density ◽  
Laser Deposition ◽  
Random Coil ◽  
Β Sheet

ABSTRACTProtein thin film (mainly silk fibroin) was prepared by pulsed laser deposition (PLD) with 1064nm IR-beam and via colloid chemical routes. Thickness, surface roughness, and microstructures of the deposited film were examined by quartz crystal microbalance sensor, field emission scanning electron microscope (FE-SEM), and atomic force microscope (AFM). The laser power density was varied systematically for PLD to control the microstructures of the film and the secondary structure (β-sheet, α-helix, or random coil) of the protein. Secondary structure of the target and film was examined by FT-IR. Films prepared by PLD comprise by agglomerated particles with their primary particle size around 30nm. The size of the primary particles was uniform, especially for the film prepared at low laser power density. At low laser power density, proportion of β-sheet increased and that of random coil decreased. Proportion of random coil was also increased by the wet colloidal process. PLD with low power density is most suitable to preserve the secondary structure in the protein thin film.

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

scholarly journals Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (91) ◽  
pp. 49723-49728 ◽  
Author(s):  
Sapna D. Ponja ◽  
Sanjayan Sathasivam ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Doped Zno ◽  
Co Doped

Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C.

Pulsed Laser Deposition of Diamond-Like Carbon Thin Films: Ablation Dynamics and Growth

1996 ◽  
Vol 438 ◽  
Author(s):  
Peidong Yang ◽  
Z. John Zhang ◽  
Jiangtao Hu ◽  
Charles M. Lieber
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Power Density ◽  
Laser Power ◽  
Large Fraction ◽  
Pulsed Laser ◽  
Laser Power Density ◽  
Laser Deposition ◽  
Diamond Like Carbon

AbstractThin films of diamond-like carbon have been grown by pulsed laser deposition using a Nd:YAG laser at 532 nm. Time-of-flight mass spectroscopy was used to investigate the effects of laser power density and background gas pressure on the plume characteristics including the species in the plume and the kinetic energy distribution of each species. We found that with increasing laser power density (1) the relative amount of C+ ions increases, (2) the kinetic energy distributions of C+ get broader and can be deconvoluted into fast and slow components, and (3) the kinetic energy of the fast component of C+ ions increases from several to 40 eV. The resistivity and the local carbon bonding in films grown under these same conditions were also characterized. It was found that there is direct correlation between the characteristics of fast part of C+ ions in the plume and the diamond-like properties of the thin films. Under optimal growth conditions diamond-like carbon films with a large fraction of sp3 bonding can be prepared, although the maximum fraction appears to saturate at 70%. The implications of these results are discussed.

scholarly journals Role of cobalt in room-temperature ferromagnetic Co-doped ZnO thin films

AIP Advances ◽  
2012 ◽  
Vol 2 (1) ◽  
pp. 012182 ◽  
Author(s):  
C. C. Wang ◽  
M. Liu ◽  
B. Y. Man ◽  
C. S. Chen ◽  
S. Z. Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Effect of annealing on the morphology and the optical characterization of the AZO:Co thin film prepared by Sol–Gel process

2019 ◽  
Vol 33 (29) ◽  
pp. 1950345
Author(s):  
Seyedeh-Niousha Mirmohammad-Hosseini-Oushani ◽  
Nasser Zare-Dehnavi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrate ◽  
Optical Transmission ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Azo Thin Film ◽  
Three Samples ◽  
Doped Zno ◽  
Co Doped

In this work, the ZnO thin film, the Al-doped ZnO (AZO) thin film (0.98M ZnO, 0.02M Al) and the (Al,Co) co-doped ZnO thin film (AZO:Co) (0.95M ZnO, 0.02M Al, 0.03M Co) were deposited on the glass substrate by the Sol–Gel method. We fabricated a sample of the ZnO thin film, a sample of the AZO thin film and three samples of AZO:Co thin films. The spin-coating was used to deposit thin film on the glass substrate. The ZnO and the AZO thin films were annealed at 450[Formula: see text]C while three samples of the AZO:Co thin films were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. In order to prepare three samples of the AZO:Co thin films, we deposited the (Al,Co) co-doped ZnO on the glass substrate for 20 s then all samples were per-heated at 80[Formula: see text]C for 10 min. we repeated this deposition process five times for each sample. Finally, three samples were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. The procedure to prepare of the ZnO and AZO thin films was like the AZO:Co thin films except that the annealing temperature was 450[Formula: see text]C. The structural and optical properties of the thin films were investigated by X-ray diffraction technique, UV-Vis spectrophotometer and Field Emission Scanning Electron Microscopy (FESEM). Results indicated that (Al,Co) co-doping in the ZnO thin film improve the optical transmission while changes in the lattice structure is small with respect to the AZO thin film. Also, the AZO:Co thin film which was annealed at 450[Formula: see text]C exhibited simultaneously the high thickness and high optical transmission.

Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application

2013 ◽  
Vol 667 ◽  
pp. 511-515 ◽  
Author(s):  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Doping Concentration ◽  
Near Infrared ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.

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