scholarly journals Uniform coating of TiO2 on high aspect ratio substrates with complex morphology by vertical forced-flow atomic layer deposition

RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34730-34735 ◽  
Author(s):  
Kuang-I. Liu ◽  
Chi-Chung Kei ◽  
Mrinalini Mishra ◽  
Po-Hsun Chen ◽  
Wei-Szu Liu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Forced Flow ◽  
Porous Substrate ◽  
Uniform Coating ◽  
Complex Morphology ◽  
Layer Deposition

A forced-flow ALD system equipped with multiple reactors where the precursors are forced to flow vertically through porous substrate.

Uniform coating of high aspect ratio surfaces through atomic layer deposition

2012 ◽  
Author(s):  
Mark Nolan ◽  
Ian Povey ◽  
Simon Elliot ◽  
Nicolas Cordero ◽  
Martyn Pemble ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Uniform Coating ◽  
Layer Deposition

Tunable Atomic Layer Deposition into Ultra-High-Aspect-Ratio (>60000:1) Aerogel Monoliths Enabled by Transport Modeling

2021 ◽  
Author(s):  
Andrew J. Gayle ◽  
Zachary J. Berquist ◽  
Yuxin Chen ◽  
Alexander J. Hill ◽  
Jacob Y. Hoffman ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Transport Modeling ◽  
Layer Deposition

Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

2017 ◽  
Vol 146 (5) ◽  
pp. 052818 ◽  
Author(s):  
I. J. M. Erkens ◽  
M. A. Verheijen ◽  
H. C. M. Knoops ◽  
W. Keuning ◽  
F. Roozeboom ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pt Films

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

scholarly journals Atomic Layer Deposition of GdCoO3 and Gd0.9Ca0.1CoO3

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 24
Author(s):  
Marion Duparc ◽  
Henrik Hovde Sønsteby ◽  
Ola Nilsen ◽  
Anja Olafsen Sjåstad ◽  
Helmer Fjellvåg
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
High Surface ◽  
High Surface Area ◽  
Atomic Layer ◽  
Oxidation Catalysis ◽  
Post Annealing ◽  
Layer Deposition

Thin films of the catalytically interesting ternary and quaternary perovskites GdCoO3 and Gd0.9Ca0.1CoO3 are fabricated by atomic layer deposition using metal β-diketonates and ozone as precursors. The resulting thin films are amorphous as deposited and become single-oriented crystalline on LaAlO3(100) and YAlO3(100/010) after post-annealing at 650 °C in air. The crystal orientations of the films are tunable by choice and the orientation of the substrate, mitigated through the interface via solid face epitaxy upon annealing. The films exhibit no sign of Co2+. Additionally, high-aspect-ratio Si(100) substrates were used to document the suitability of the developed process for the preparation of coatings on more complex, high-surface-area structures. We believe that coatings of GdCoO3 and Gd1−xCaxCoO3 may find applications within oxidation catalysis.

Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition

Langmuir ◽  
2015 ◽  
Vol 31 (18) ◽  
pp. 5057-5062 ◽  
Author(s):  
Peter Schindler ◽  
Manca Logar ◽  
J Provine ◽  
Fritz B. Prinz
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Step Coverage ◽  
Layer Deposition

scholarly journals Pt–Al2O3dual layer atomic layer deposition coating in high aspect ratio nanopores

2012 ◽  
Vol 24 (1) ◽  
pp. 015602 ◽  
Author(s):  
Gaspard Pardon ◽  
Hithesh K Gatty ◽  
Göran Stemme ◽  
Wouter van der Wijngaart ◽  
Niclas Roxhed
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Atomic Layer Deposition Coating

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns

2018 ◽  
Vol 57 (6S2) ◽  
pp. 06JB03 ◽  
Author(s):  
Yumiko Miyano ◽  
Ryota Narasaki ◽  
Takashi Ichikawa ◽  
Atsushi Fukumoto ◽  
Fumiki Aiso ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Multiscale Modeling ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Layer Deposition
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