scholarly journals Addition of iron oxides in sediments enhances 2,3,4,5-tetrachlorobiphenyl (PCB 61) dechlorination by low-voltage electric fields

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26019-26027 ◽  
Author(s):  
Xiaoping Liu ◽  
Hui Wan ◽  
Yuzhou Xue ◽  
Chunhua Feng ◽  
Chaohai Wei
Keyword(s):  
Iron Oxides ◽  
Electric Fields ◽  
Low Voltage ◽  
Anaerobic Dechlorination

The presence of iron oxides in sediments significantly improves anaerobic dechlorination of PCB (i.e., PCB 61) in bioelectrochemical reactors.

scholarly journals Universal intracellular biomolecule delivery with precise dosage control

2018 ◽  
Vol 4 (10) ◽  
pp. eaat8131 ◽  
Author(s):  
Y. Cao ◽  
H. Chen ◽  
R. Qiu ◽  
M. Hanna ◽  
E. Ma ◽  
...  
Keyword(s):  
Cell Membrane ◽  
Electric Fields ◽  
Low Voltage ◽  
Intracellular Delivery ◽  
Cell Types ◽  
Controlled Delivery ◽  
Biological Research ◽  
Biological Applications ◽  
Primary Cells ◽  
Cell Densities

Intracellular delivery of mRNA, DNA, and other large macromolecules into cells plays an essential role in an array of biological research and clinical therapies. However, current methods yield a wide variation in the amount of material delivered, as well as limitations on the cell types and cargoes possible. Here, we demonstrate quantitatively controlled delivery into a range of primary cells and cell lines with a tight dosage distribution using a nanostraw-electroporation system (NES). In NES, cells are cultured onto track-etched membranes with protruding nanostraws that connect to the fluidic environment beneath the membrane. The tight cell-nanostraw interface focuses applied electric fields to the cell membrane, enabling low-voltage and nondamaging local poration of the cell membrane. Concurrently, the field electrophoretically injects biomolecular cargoes through the nanostraws and into the cell at the same location. We show that the amount of material delivered is precisely controlled by the applied voltage, delivery duration, and reagent concentration. NES is highly effective even for primary cell types or different cell densities, is largely cargo agnostic, and can simultaneously deliver specific ratios of different molecules. Using a simple cell culture well format, the NES delivers into >100,000 cells within 20 s with >95% cell viability, enabling facile, dosage-controlled intracellular delivery for a wide variety of biological applications.

ELECTRO-OPTICAL SWITCHING CHARACTERISTICS OF VOLUME HOLOGRAMS IN POLYMER DISPERSED LIQUID CRYSTALS

1996 ◽  
Vol 05 (01) ◽  
pp. 89-98 ◽  
Author(s):  
L.V. NATARAJAN ◽  
R.L. SUTHERLAND ◽  
V.P. TONDIGLIA ◽  
T.J. BUNNING ◽  
W.W. ADAMS
Keyword(s):  
Liquid Crystal ◽  
Electric Fields ◽  
Optical Switching ◽  
Low Voltage ◽  
Response Times ◽  
Single Step ◽  
Material System ◽  
Volume Holograms ◽  
Polymer Dispersed ◽  
Switching Characteristics

Electrically switchable volume holograms lead to the possiblity of real-time electro-optical control of diffractive optic components. We report here on the development of a novel photopolymer-liquid crystal composite material system for writing in a fast single step, high diffraction efficiency volume holograms, capable of switching in applied electric fields of low voltage. Switching of a first-order Bragg diffracted beam into the zero-order with an applied field of ~10 V/µm was observed. With the addition of a surfactant to our pre-polymer syrup, we observed lowering of the switching fields to ~5 V/µm. We report response times for switching and relaxation in the order of microseconds. Low voltage, high resolution scanning electron microscopy studies show that the Bragg gratings formed consist of periodic polymer dispersed liquid crystal planes. The addition of surfactant leads to formation of very uniform small (20–40 nm) nematic droplets. A simple model based on the shape of the liquid crystal droplets was applied to explain the switching fields and response times.

Electron Donor Substances and Iron Oxides Stimulate Anaerobic Dechlorination of DDT in a Slurry System with Hydragric Acrisols

2016 ◽  
Vol 45 (1) ◽  
pp. 331-340 ◽  
Author(s):  
Cui-Ying Liu ◽  
Barbara J. Cade-Menun ◽  
Xiang-Hua Xu ◽  
Jian-Ling Fan
Keyword(s):  
Iron Oxides ◽  
Electron Donor ◽  
Slurry System ◽  
Anaerobic Dechlorination

scholarly journals A room-temperature electrical field–controlled magnetic memory cell

2007 ◽  
Vol 22 (8) ◽  
pp. 2111-2115 ◽  
Author(s):  
C. Cavaco ◽  
M. van Kampen ◽  
L. Lagae ◽  
G. Borghs
Keyword(s):  
Electric Fields ◽  
Lead Zirconate Titanate ◽  
Low Voltage ◽  
Uniaxial Anisotropy ◽  
Memory Cell ◽  
Lead Zirconate ◽  
Magnetic Characteristics ◽  
Magnetic Memory ◽  
Anisotropy Axis ◽  
Electrical Field

We present a method that allows changing the anisotropy and the magnetic characteristics of piezoelectric–ferromagnetic hybrid structures by electric fields, thereby suppressing the need for external or local magnetic fields. We have investigated the magnetic properties of single Co50Fe50 and CoFe80B20 magnetostrictive thin films as well as of high-quality bottom-pinned spin valves (SV) sputtered on piezoelectric substrates [lead zirconate titanate (PZT)] and patterned in an interdigitated transducer (IDT). Induction of a uniaxial anisotropy axis and the changes on coercivity and switching fields as a function of the applied bias voltage on the IDT are analyzed and interpreted. The down-scalability of this hybrid method supports the possibility of achieving low-power/low-voltage control of the switching fields and shows the feasibility of a hybrid ferroelectric magnetic memory cell.

Effects of localised, low-voltage pulsed electric fields on the development and inhibition ofPseudomonas aeruginosabiofilms

Biofouling ◽  
2006 ◽  
Vol 22 (6) ◽  
pp. 383-390 ◽  
Author(s):  
Rodolfo E. Perez-Roa ◽  
Dean T. Tompkins ◽  
Maggie Paulose ◽  
Craig A. Grimes ◽  
Marc A. Anderson ◽  
...  
Keyword(s):  
Electric Fields ◽  
Low Voltage ◽  
Pulsed Electric Fields

scholarly journals Cell Fragmentation and Permeabilization by a 1 ns Pulse Driven Triple-Point Electrode

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Enbo Yang ◽  
Joy Li ◽  
Michael Cho ◽  
Shu Xiao
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Triple Point ◽  
Tungsten Wire ◽  
Low Voltage ◽  
Pulsed Electric Fields ◽  
High Electric Field ◽  
Bubble Collapse ◽  
Principal Mechanism ◽  
Point Electrode

Ultrashort electric pulses (ns-ps) are useful in gaining understanding as to how pulsed electric fields act upon biological cells, but the electric field intensity to induce biological responses is typically higher than longer pulses and therefore a high voltage ultrashort pulse generator is required. To deliver 1 ns pulses with sufficient electric field but at a relatively low voltage, we used a glass-encapsulated tungsten wire triple-point electrode (TPE) at the interface among glass, tungsten wire, and water when it is immersed in water. A high electric field (2 MV/cm) can be created when pulses are applied. However, such a high electric field was found to cause bubble emission and temperature rise in the water near the electrode. They can be attributed to Joule heating near the electrode. Adherent cells on a cover slip treated by the combination of these stimuli showed two major effects: (1) cells in a crater (<100 μm from electrode) were fragmented and the debris was blown away. The principal mechanism for the damage is presumed to be shear forces due to bubble collapse; and (2) cells in the periphery of the crater were permeabilized, which was due to the combination of bubble movement and microstreaming as well as pulsed electric fields. These results show that ultrashort electric fields assisted by microbubbles can cause significant cell response and therefore a triple-point electrode is a useful ablation tool for applications that require submillimeter precision.

Effects of Metal Nanocrystals and Traps in Tunneling Rate Measurements in Metal Nanocrystal Based Carbon Nanotube Memory

2006 ◽  
Vol 963 ◽  
Author(s):  
Udayan Ganguly ◽  
Tuo-Hung Hou ◽  
Edwin Kan
Keyword(s):  
Carbon Nanotube ◽  
Electric Fields ◽  
Flash Memory ◽  
Low Voltage ◽  
Memory Device ◽  
Tunneling Rate ◽  
Direct Tunneling ◽  
High Electric Fields ◽  
Tunneling Behavior ◽  
Tunneling Rates

ABSTRACTThe metal nanocrystal (NC) based carbon nanotube (CNT) memory device has been probed with tunneling rate measurements. Firstly, tunneling behavior at two temperatures (300K and 10K) is reported here to demonstrate the distinct charge tunneling behavior for traps versus NCs and understand their relative contributions to program operations. Low temperature measurements show clear differentiation for two regimes of quantum transport. The FN tunneling regime exhibits strong bias dependence and dominates at high electric fields producing larger tunneling rates than the direct tunneling regime. In comparison to traps, the metal NCs repel potential contours and hence produce higher electric fields that enhance tunneling. The FN tunneling diminishes when the charging of the nanocrystal or traps decreases (relaxes) the electric field in the tunnel dielectric (TD) enough for the low field direct tunneling to dominate. The direct tunneling occurs at low fields, and is less sensitive to electric fields. The NCs demonstrate faster tunneling which can be ascribed to their large tunneling cross-section compared to traps. This is despite the relative proximity of traps to the channel in our structure. Secondly, the tunneling rates for two different TDs of similar EOT (under linear approximation) have been characterized and compared. They are a homogenous evaporated SiO2 and layered dielectric consisting of an evaporated SiO2 and ALD Al2O3 stack. While the evaporated SiO2 based TD demonstrates the distinct NC versus trap tunnel rate performance, the layered TD demonstrates stronger resistance to tunneling to the NCs. This result is consistent with the low tunneling rates demonstrated in Al2O3 elsewhere. Finally, the program performance of the NC-CNT memory device is evaluated as 0.5 V threshold voltage (VT) shift for a charging pulse of 9V and 100 μs. Combining with previous results, this indicates that NC-CNT memory is a promising candidate for low voltage, fast, multi-level cell (MLC) operation with sub-lithographic (self-assembled) features for sub 30 nm FLASH memory node. From the device physics perspective, these measurements may serve as the calibration and validation for advanced tunneling calculations and device modeling for promising nanoscale charge-based non-volatile memories.

scholarly journals Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

2008 ◽  
Vol 2008 ◽  
pp. 1-8 ◽  
Author(s):  
Victor Veliadis ◽  
Ty McNutt ◽  
Megan Snook ◽  
Harold Hearne ◽  
Paul Potyraj ◽  
...  
Keyword(s):  
Electric Fields ◽  
Low Voltage ◽  
Voltage Drop ◽  
Short Circuit ◽  
Drain Voltage ◽  
Large Area ◽  
Active Device ◽  
Circuit Performance ◽  
Power Switches ◽  
High Electric Fields

SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at 300°C. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2 V and a specific onstate resistance of 5.4 mΩ cm2. The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15 mΩ cm2. The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2 V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.

Experimental Characterization of Low Voltage Field Emission From Carbon-Based Cathodes in Atmospheric Air

Materials ◽  
2003 ◽  
Author(s):  
M. S. Peterson ◽  
T. S. Fisher ◽  
S. V. Garimella ◽  
D. J. Schlitz
Keyword(s):  
Field Emission ◽  
Electric Fields ◽  
Low Voltage ◽  
Polycrystalline Diamond ◽  
Electron Field Emission ◽  
Gas Discharges ◽  
Field Emission Properties ◽  
Electron Field ◽  
Current Densities ◽  
Carbon Based

Nanoscale carbon-based field-emitter materials exhibit excellent electron field emission properties, characterized by low turn-on voltages and high current densities. The use of these materials has not been previously considered for ion generation in air, yet these properties suggest that substantial ionization may occur at low voltages compared to conventional methods involving glow or arc gas discharges. Electron field emission from carbon-based materials, including polycrystalline diamond and carbon nanotubes, in atmospheric pressure air is experimentally characterized. Electric fields between 30 V/μm and 100 V/μm applied between the two terminals produce field-emitted electrons via quantum tunneling. These electrons then travel through the electric field colliding with neutral air molecules and occasionally ionizing them. This process can produce a self-sustained current flow (from fractions of picoamperes to microamperes) between the anode and cathode. The current remains stable at voltages lower than those predicted by Paschen’s curve for gaseous breakdown and ionization. Results indicate the presence of field emission from the cathode that aids in sustaining current at low voltages. The observed behavior suggests that this method can achieve efficient generation of ions for air purification and ionic flow pumping.

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