scholarly journals Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17848-17856 ◽  
Author(s):  
Aliff Hisyam A Razak ◽  
Liyun Yu ◽  
Anne Ladegaard Skov
Keyword(s):  
Mechanical Properties ◽  
Relative Permittivity ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Dielectric Elastomers ◽  
Silicone Elastomers ◽  
Copolymer Blends ◽  
Electrical Breakdown Strength

Increased electro-mechanical properties of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers.

scholarly journals Silicone elastomers with covalently incorporated aromatic voltage stabilisers

RSC Advances ◽  
2017 ◽  
Vol 7 (1) ◽  
pp. 468-477 ◽  
Author(s):  
A. H. A. Razak ◽  
A. L. Skov
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Dielectric Elastomers ◽  
Silicone Elastomers ◽  
Electrical Breakdown Strength

When optimising dielectric elastomers (DEs) a conflict exists, namely that for large achievable actuation strains softness is required, but with increased softness electrical breakdown strength decreases.

Stretch dependence of the electrical breakdown strength and dielectric constant of dielectric elastomers

2013 ◽  
Vol 22 (10) ◽  
pp. 104012 ◽  
Author(s):  
Andreas Tröls ◽  
Alexander Kogler ◽  
Richard Baumgartner ◽  
Rainer Kaltseis ◽  
Christoph Keplinger ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Dielectric Elastomers ◽  
Electrical Breakdown Strength

Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure

2021 ◽  
Vol 130 (14) ◽  
pp. 144101
Author(s):  
Jeffrey X. Zheng ◽  
Dixiong Wang ◽  
Pariasadat Musavigharavi ◽  
Merrilyn Mercy Adzo Fiagbenu ◽  
Deep Jariwala ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Scandium Nitride ◽  
Strength Enhancement ◽  
Electrical Breakdown Strength

scholarly journals The Effects of Aluminum-Nitride Nano-Fillers on the Mechanical, Electrical, and Thermal Properties of High Temperature Vulcanized Silicon Rubber for High-Voltage Outdoor Insulator Applications

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  
Keyword(s):  
Contact Angle ◽  
Thermal Properties ◽  
High Temperature ◽  
High Voltage ◽  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Theoretical Models ◽  
Dielectric Constants ◽  
Silicon Rubber ◽  
Electrical Breakdown Strength

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
A. Putnis ◽  
K. K. Chan ◽  
K. J. Clay ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Type I ◽  
Si Substrates ◽  
Semiconducting Properties ◽  
Electrical Breakdown Strength ◽  
Poly Crystalline Diamond

ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

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