Control of the alignment of liquid crystal molecules on a sequence-polymerized film by surface migration and polarized light irradiation

2017 ◽  
Vol 8 (47) ◽  
pp. 7316-7324 ◽  
Author(s):  
Feng Cai ◽  
Feng Zheng ◽  
Xuemin Lu ◽  
Qinghua Lu

A terminal azobenzene-containing terpolymer with excellent thermal stability and transparency was developed for the photo-alignment of liquid crystal molecules.

Soft Matter ◽  
2015 ◽  
Vol 11 (39) ◽  
pp. 7802-7808 ◽  
Author(s):  
I. Nys ◽  
J. Beeckman ◽  
K. Neyts

A planar liquid crystal (LC) cell is developed in which two photo-alignment layers have been illuminated with respectively a horizontal and a vertical diffraction pattern of interfering left- and right-handed circularly polarized light.


2010 ◽  
Vol 428-429 ◽  
pp. 301-304 ◽  
Author(s):  
Ji Wei Zhou ◽  
Guang Ming Ke ◽  
Bin Wang ◽  
Wei Dong Liu ◽  
Rui Xing Li

The paper reports the methods for making a novel optical device consisted of photo alignment nematic liquid crystal films and polarizers. The color shift of the device depends on not only the viewing angle but also the viewing orientation. The retardation and intensity of the reflected light are theoretically calculated on the basis of Jones Matrix, and a spectral-RGB transition program is introduced to display colorful results directly. The theoretical results show excellent agreement with experimental data. It is an effective method for predicting interference color and optimizing key parameters of the device. The device can be used to protect valuable documents against fraud because of its special optical variable effects which is caused by interference of polarized light.


2001 ◽  
Vol 28 (3) ◽  
pp. 473-475 ◽  
Author(s):  
Yinghan Wang ◽  
Chunying Xu ◽  
Akihiko Kanazawa ◽  
Takeshi Shiono ◽  
Tomiki Ikeda ◽  
...  

Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


Author(s):  
Lu Wang ◽  
Shengdong Sun ◽  
Huajie Luo ◽  
Yang Ren ◽  
Hui Liu ◽  
...  

The realization of high piezoelectric performance and excellent temperature stability simultaneously in lead-free ceramics is the key for replacing Pb-containing perovskites in industry. In this study, large piezoelectric performance (d33...


2021 ◽  
Author(s):  
Zhaoming Zhang ◽  
Takunori Harada ◽  
Adriana Pietropaolo ◽  
Yuting Wang ◽  
Yue Wang ◽  
...  

Preferred-handed propeller conformation was induced by circularly polarized light irradiation to three amorphous molecules with trigonal symmetry, and the molecules with induced chirality efficiently exhibited blue circularly polarized luminescence. In...


Sign in / Sign up

Export Citation Format

Share Document