Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7228-7237 ◽  
Author(s):  
Weihua Wu ◽  
Zihan Zhao ◽  
Bo Shen ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
...  

The scaling effects of the Ge8Sb92 thin films on the phase change behavior, thermal properties, phase structure, crystallization mechanism and electrical switching characteristics of phase change memory were systematically investigated.

2010 ◽  
Vol 518 (24) ◽  
pp. 7316-7319 ◽  
Author(s):  
Yung-Ching Chu ◽  
Po-Chin Chang ◽  
Kin-Fu Kao ◽  
Shih-Ching Chang ◽  
Tsung-Shune Chin

2011 ◽  
Vol 128 (3) ◽  
pp. 405-409 ◽  
Author(s):  
Huan Huang ◽  
Simian Li ◽  
Fengxiao Zhai ◽  
Yang Wang ◽  
Tianshu Lai ◽  
...  

2012 ◽  
Vol 358 (17) ◽  
pp. 2402-2404 ◽  
Author(s):  
Liang Tong ◽  
Ling Xu ◽  
Yifan Jiang ◽  
Fei Yang ◽  
Lei Geng ◽  
...  

2019 ◽  
Vol 11 (7) ◽  
pp. 269-278 ◽  
Author(s):  
Tianniu Chen ◽  
Chongying Xu ◽  
William Hunks ◽  
Matthias Stender ◽  
Gregory T. Stauf ◽  
...  

2016 ◽  
Vol 49 (38) ◽  
pp. 385101
Author(s):  
Qiang He ◽  
Zhen Li ◽  
Chang Liu ◽  
Xiang-ru Meng ◽  
Ju-hong Peng ◽  
...  

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