Crystallization characteristic and scaling behavior of germanium antimony thin films for phase change memory
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The scaling effects of the Ge8Sb92 thin films on the phase change behavior, thermal properties, phase structure, crystallization mechanism and electrical switching characteristics of phase change memory were systematically investigated.
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2014 ◽
Vol 49
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pp. 388-392
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2006 ◽
Vol 7
(1)
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pp. 7-11
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2011 ◽
Vol 128
(3)
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pp. 405-409
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2019 ◽
Vol 8
(10)
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pp. P563-P566
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2016 ◽
Vol 49
(38)
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pp. 385101
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