scholarly journals Enhanced vapour sensing using silicon nanowire devices coated with Pt nanoparticle functionalized porous organic frameworks

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 6884-6891 ◽  
Author(s):  
Anping Cao ◽  
Meixia Shan ◽  
Laura Paltrinieri ◽  
Wiel H. Evers ◽  
Liangyong Chu ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Pt Nanoparticle ◽  
Sensing Properties ◽  
Methanol Vapour

Silicon nanowires functionalized with metalized porous organic frameworks exhibit superior sensing properties for methanol vapour detection.

scholarly journals Silicon Nanowires with MoSxand Pt as Electrocatalysts for Hydrogen Evolution Reaction

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
S. H. Hsieh ◽  
S. T. Ho ◽  
W. J. Chen
Keyword(s):  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Silicon Nanowires ◽  
Electrochemical Impedance ◽  
Silicon Nanowire ◽  
Electrochemical Characterizations ◽  
Pt Nanoparticle ◽  
Transmission Electron ◽  
Acidic Electrolyte ◽  
Nanocomposite Catalysts

A convenient method was used for synthesizing Pt-nanoparticle/MoSx/silicon nanowires nanocomposites. Obtained Pt-MoSx/silicon nanowires electrocatalysts were characterized by transmission electron microscopy (TEM). The hydrogen evolution reaction efficiency of the Pt-MoSx/silicon nanowire nanocomposite catalysts was assessed by examining polarization and electrolysis measurements under solar light irradiations. The electrochemical characterizations demonstrate that Pt-MoSx/silicon nanowire electrodes exhibited an excellent catalytic activity for hydrogen evolution reaction in an acidic electrolyte. The hydrogen production capability of Pt-MoSx/silicon nanowires is also comparable toMoSx/silicon nanowires and Pt/silicon nanowires. Electrochemical impedance spectroscopy experiments suggest that the enhanced performance of Pt-MoSx/silicon nanowires can be attributed to the fast electron transfer between Pt-MoSx/silicon nanowire electrodes and electrolyte interfaces.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Modeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices

2011 ◽  
Vol 110 (3) ◽  
pp. 033524 ◽  
Author(s):  
Pier-Francesco Fazzini ◽  
Caroline Bonafos ◽  
Alain Claverie ◽  
Alexandre Hubert ◽  
Thomas Ernst ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Modeling Stress

Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

2002 ◽  
Vol 19 (11) ◽  
pp. 1703-1706 ◽  
Author(s):  
Li Meng-Ke ◽  
Lu Mei ◽  
Kong Ling-Bin ◽  
Wang Cheng-Wei ◽  
Guo Xin-Yong ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Photoluminescence Properties

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Ultrathin Silicon Nanowires Produced by a Bi-Metal-Assisted Chemical Etching Method for Highly Stable Lithium-Ion Battery Anodes

NANO ◽  
2020 ◽  
Vol 15 (06) ◽  
pp. 2050076
Author(s):  
Fang Sun ◽  
Zhiyuan Tan ◽  
Zhengguang Hu ◽  
Jun Chen ◽  
Jie Luo ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Lithium Ion Battery ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
High Capacity ◽  
Lithium Ion ◽  
Average Diameter ◽  
Sei Layer ◽  
Metal Assisted Chemical Etching

Silicon is widely studied as a high-capacity lithium-ion battery anode. However, the pulverization of silicon caused by a large volume expansion during lithiation impedes it from being used as a next generation anode for lithium-ion batteries. To overcome this drawback, we synthesized ultrathin silicon nanowires. These nanowires are 1D silicon nanostructures fabricated by a new bi-metal-assisted chemical etching process. We compared the lithium-ion battery properties of silicon nanowires with different average diameters of 100[Formula: see text]nm, 30[Formula: see text]nm and 10[Formula: see text]nm and found that the 30[Formula: see text]nm ultrathin silicon nanowire anode has the most stable properties for use in lithium-ion batteries. The above anode demonstrates a discharge capacity of 1066.0[Formula: see text]mAh/g at a current density of 300[Formula: see text]mA/g when based on the mass of active materials; furthermore, the ultrathin silicon nanowire with average diameter of 30[Formula: see text]nm anode retains 87.5% of its capacity after the 50th cycle, which is the best among the three silicon nanowire anodes. The 30[Formula: see text]nm ultrathin silicon nanowire anode has a more proper average diameter and more efficient content of SiOx. The above prevents the 30[Formula: see text]nm ultrathin silicon nanowires from pulverization and broken during cycling, and helps the 30[Formula: see text]nm ultrathin silicon nanowires anode to have a stable SEI layer, which contributes to its high stability.

scholarly journals Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1434
Author(s):  
Mariem Naffeti ◽  
Pablo Aitor Postigo ◽  
Radhouane Chtourou ◽  
Mohamed Ali Zaïbi
Keyword(s):  
Silicon Nanowires ◽  
Near Infrared ◽  
Surface Passivation ◽  
Silicon Nanowire ◽  
Etching Technique ◽  
Highly Efficient ◽  
Broadband Emission ◽  
New Family ◽  
Nano Coating ◽  
Nanowire Surface

A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

A review and analysis on growth and optical absorption properties of silicon nanowire array for photovoltaic applications

2015 ◽  
Vol 29 (30) ◽  
pp. 1530007 ◽  
Author(s):  
Ritu Sharma ◽  
Lalit Kumar Dusad
Keyword(s):  
Solar Cells ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Major Research ◽  
Absorption Properties ◽  
Silicon Nanowire Array ◽  
Photovoltaic Applications ◽  
Research Findings ◽  
Experimental Approaches

In this paper, optical absorptions in silicon nanowires (SiNWs) arrays obtained from theoretical studies and experimental approaches have been reviewed. A brief description on the different growth techniques for SiNW arrays reported so far is presented. Comparative analysis based on major research findings has been done and the advantages of SiNW-based solar cells over thin film solar cells are presented. Furthermore, future aspects of the use of SiNWs for photovoltaic applications are discussed.

Thermoelectric Properties of Silicon Nanowire Array and Spin-on Glass Composites Fabricated with CMOS-compatible Techniques

2012 ◽  
Vol 1408 ◽  
Author(s):  
Benjamin M. Curtin ◽  
John E. Bowers
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Square Lattice ◽  
Glass Composites ◽  
Si Substrates ◽  
Silicon Nanowire Array ◽  
Work Interference

ABSTRACTSilicon nanowires (NWs) are promising thermoelectric materials as they offer large reductions in thermal conductivity over bulk Si without a significant decrease in the Seebeck coefficient or electrical conductivity. In this work, interference lithography was used to pattern a square lattice photoresist template over 2 cm x 2 cm Si substrates. The resulting vertical Si NW arrays were 1 μm tall with a packing density of ~15%, and the diameter of the Si NWs were 80 - 90 nm. The Si NW arrays were then embedded in spin-on glass (SOG) to form a dense composite material with a measured thermal conductivity of 1.45 W/m-K at 300 K. Devices were fabricated for cross-plane Seebeck coefficient measurements and the Si NW/SOG composite was found to have a Seebeck coefficient of roughly -284 μV/K, which is similar to bulk Si with the same doping. We also report a combined power generation of 29.3 μW from both the Si NW array and Si substrate with a temperature difference of 56 K and 50 μm x 50 μm device area.

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