Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
Keyword(s):
Large area 2D MoS2 and WSe2 are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe2 film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.
2016 ◽
Vol 34
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pp. 031501
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1994 ◽
2003 ◽
Vol 32
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pp. 371-374
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1985 ◽
Vol 132
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pp. 662-668
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2017 ◽
Vol 47
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pp. 982-987
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