Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 336-341 ◽  
Author(s):  
Kehao Zhang ◽  
Bhakti Jariwala ◽  
Jun Li ◽  
Natalie C. Briggs ◽  
Baoming Wang ◽  
...  

Large area 2D MoS2 and WSe2 are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe2 film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.

2021 ◽  
Vol 66 (1) ◽  
pp. 49-56
Author(s):  
Quyen Do Le ◽  
Duc Nguyen Anh

Recently, novel physical properties originating from quantum confinement endow the twodimensional (2D) transition metal dichalcogenides, such as MoS2, or WSe2 to attract a great deal of attention. However, the synthesis of 2D-TMDC has to be still limited, in which the precursors are almost based on high vapor pressure inorganic materials, that produce a smallscale film, and it is mainly performed only on conventional Si\SiO2 substrate. In this work, we successfully synthesize the atomic thickness of 2D-MoS2 films by using metal-organic chemical vapor deposition (MOCVD) on several kinds of substrate, namely silicon (Si), silicon dioxide (SiO2), graphite foil, or fluorine-doped tin oxide (FTO). The morphology of samples is observed by field emission scanning electron microscopy (FE-SEM), and scanning transmission electron microscopy (STEM). The lattice vibrational and optical properties are investigated by Raman and photoluminescence (PL) spectroscopies, respectively. With the same MOCVD growing condition, as-obtained samples exhibit the hexagonal configuration (2H phase), whereas the surface morphology and the thickness show a discrepancy, depending on the substrates.


Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1031 ◽  
Author(s):  
Chunyang Jia ◽  
Dae-Woo Jeon ◽  
Jianlong Xu ◽  
Xiaoyan Yi ◽  
Ji-Hyeon Park ◽  
...  

In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.


1995 ◽  
Vol 67 (5) ◽  
pp. 712-714 ◽  
Author(s):  
Z. Lu ◽  
J. K. Truman ◽  
M. E. Johansson ◽  
D. Zhang ◽  
C. F. Shih ◽  
...  

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