Time-dependent transport characteristics of graphene tuned by ferroelectric polarization and interface charge trapping

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 328-335 ◽  
Author(s):  
Wenjing Jie ◽  
Jianhua Hao
Keyword(s):  
Transport Properties ◽  
Charge Trapping ◽  
Time Dependent ◽  
Ferroelectric Polarization ◽  
Interface Charge ◽  
Dependent Transport

The graphene shows time-dependent transport properties due to the co-existing effects of ferroelectric polarization and interface charge trapping.

scholarly journals Mechanical measurements of heterogeneity and length scale effects in PEG-based hydrogels

Soft Matter ◽  
2015 ◽  
Vol 11 (36) ◽  
pp. 7191-7200 ◽  
Author(s):  
Brian G. Bush ◽  
Jenna M. Shapiro ◽  
Frank W. DelRio ◽  
Robert F. Cook ◽  
Michelle L. Oyen
Keyword(s):  
Transport Properties ◽  
Scale Effects ◽  
Time Dependent ◽  
Length Scale ◽  
Peg Hydrogels ◽  
Colloidal Probe ◽  
Mechanical Measurements ◽  
Dependent Transport ◽  
Micrometer Scale

Colloidal-probe AFM was used to characterize the time-dependent transport properties of PEG hydrogels and assess heterogeneity at the micrometer scale.

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

System Size-Dependent Transport Properties in Materials of Nanoscale Dimension

2021 ◽  
Vol 125 (12) ◽  
pp. 6963-6974
Author(s):  
Ravi C. Dutta ◽  
Christian C. Zuluaga-Bedoya ◽  
Suresh K. Bhatia
Keyword(s):  
Transport Properties ◽  
System Size ◽  
Size Dependent ◽  
Dependent Transport

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Qian Liu ◽  
Yaqiang Tian ◽  
Xiaoping Zheng ◽  
Liansheng Chen ◽  
Yuqing Zhao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Nano Research ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 61-66
Author(s):  
Alexandre Bucamp ◽  
Christophe Coinon ◽  
David Troadec ◽  
Sylvie Lepilliet ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Transport Properties ◽  
Core Shell ◽  
Gate Length ◽  
Dependent Transport ◽  
Shell Nanowires

scholarly journals Stepwise introduction of model complexity in a generalized master equation approach to time-dependent transport

2012 ◽  
Vol 61 (2-3) ◽  
pp. 305-316 ◽  
Author(s):  
V. Gudmundsson ◽  
O. Jonasson ◽  
Th. Arnold ◽  
C-S. Tang ◽  
H.-S. Goan ◽  
...  
Keyword(s):  
Master Equation ◽  
Time Dependent ◽  
Model Complexity ◽  
Equation Approach ◽  
Master Equation Approach ◽  
Dependent Transport ◽  
Generalized Master Equation
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