Insight on the silver catalyst distribution during silicon nanowire array formation: an X-ray reflectivity study

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19073-19085 ◽  
Author(s):  
Jesse W. Kremenak ◽  
Christopher J. Arendse ◽  
Franscious R. Cummings ◽  
Yiyao Chen ◽  
Paul F. Miceli
Keyword(s):  
Depth Distribution ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Metal Catalyst ◽  
Silver Catalyst ◽  
X Ray ◽  
Silicon Nanowire Array ◽  
First Time ◽  
Catalyst Distribution

The metal catalyst depth distribution is determined for the first time in etched Si nanowire arrays using X-ray reflectivity.

scholarly journals A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array

2020 ◽  
Vol 10 (3) ◽  
pp. 1146 ◽  
Author(s):  
Kangil Kim ◽  
Jae Keun Lee ◽  
Seung Ju Han ◽  
Sangmin Lee
Keyword(s):  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Fabrication Method ◽  
Top Down ◽  
Silicon Nanowire Arrays ◽  
Sensing Applications ◽  
Silicon Nanowire Array ◽  
Cross Sectional Dimension

Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with reproducible and controllable dimensions. Indeed, for integration with microscale structures and circuits, a monolithic wafer-level process based on a top-down silicon-nanowire array fabrication method is essential. For sensors in various electromechanical and photoelectric applications, the need for silicon nanowires (as a functional building block) is increasing, and thus monolithic integration is highly required. In this paper, a novel top-down method for fabricating vertically-stacked silicon-nanowire arrays is presented. This method enables the fabrication of lateral silicon-nanowire arrays in a vertical direction, as well as the fabrication of an increased number of silicon nanowires on a finite dimension. The proposed fabrication method uses a number of processes: photolithography, deep reactive-ion etching, and wet oxidation. In applying the proposed method, a vertically-aligned silicon-nanowire array, in which a single layer consists of three vertical layers with 20 silicon nanowires, is fabricated and analyzed. The diamond-shaped cross-sectional dimension of a single silicon nanowire is approximately 300 nm in width and 20 μm in length. The developed method is expected to result in highly-sensitive, reproducible, and low-cost silicon-nanowire sensors for various biomedical applications.

Fabrication and photoelectrochemical properties of silicon/nickel oxide core/shell nanowire arrays

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 88209-88213 ◽  
Author(s):  
Fu-Qiang Zhang ◽  
Ya Hu ◽  
Xiang-Min Meng ◽  
Kui-Qing Peng
Keyword(s):  
Nickel Oxide ◽  
Water Oxidation ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Photoelectrochemical Properties ◽  
Shell Layer ◽  
Silicon Nanowire Array ◽  
Thin Nickel ◽  
Solar Water Oxidation

A photoelectrochemical (PEC) cell made of a silicon nanowire array coated with a thin nickel oxide (NiOx) shell layer for solar water oxidation is presented.

scholarly journals Reusable Surface-Enhanced Raman Spectroscopy Substrates Made of Silicon Nanowire Array Coated with Silver Nanoparticles Fabricated by Metal-Assisted Chemical Etching and Photonic Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1531 ◽  
Author(s):  
Shi Bai ◽  
Yongjun Du ◽  
Chunyan Wang ◽  
Jian Wu ◽  
Koji Sugioka
Keyword(s):  
Silver Nanoparticles ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Surface Enhanced Raman Spectroscopy ◽  
Sers Substrate ◽  
Silicon Nanowire Array ◽  
Surface Enhanced ◽  
Surface Enhanced Raman ◽  
Metal Assisted Chemical Etching

Surface-enhanced Raman spectroscopy (SERS) has advanced over the last four decades and has become an attractive tool for highly sensitive analysis in fields such as medicine and environmental monitoring. Recently, there has been an urgent demand for reusable and long-lived SERS substrates as a means of reducing the costs associated with this technique To this end, we fabricated a SERS substrate comprising a silicon nanowire array coated with silver nanoparticles, using metal-assisted chemical etching followed by photonic reduction. The morphology and growth mechanism of the SERS substrate were carefully examined and the performance of the fabricated SERS substrate was tested using rhodamine 6G and dopamine hydrochloride. The data show that this new substrate provides an enhancement factor of nearly 1 × 108. This work demonstrates that a silicon nanowire array coated with silver nanoparticles is sensitive and sufficiently robust to allow repeated reuse. These results suggest that this newly developed technique could allow SERS to be used in many commercial applications.

A hierarchical oxygen vacancy-rich WO3 with “nanowire-array-on-nanosheet-array” structure for highly efficient oxygen evolution reaction

2019 ◽  
Vol 7 (12) ◽  
pp. 6730-6739 ◽  
Author(s):  
Jinxiang Diao ◽  
Wenyu Yuan ◽  
Yu Qiu ◽  
Laifei Cheng ◽  
Xiaohui Guo
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Evolution Reaction ◽  
Oxygen Vacancies ◽  
State Of The Art ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Nanosheet Array ◽  
Nanosheet Arrays ◽  
Array Structure ◽  
First Time

Hierarchical vertical WO3 nanowire arrays on vertical WO3 nanosheet arrays with rich oxygen vacancies were synthesized via a simple and facile method, and the outstanding OER performance which is superior to that of most reported state-of-the-art catalysts was reported for the first time.

scholarly journals High density core-shell silicon nanowire array for the realization of third generation solar cell

2011 ◽  
Vol 10 ◽  
pp. 33-37 ◽  
Author(s):  
Ludovic Dupré ◽  
Denis Buttard ◽  
Pascal Gentile ◽  
Nicolas Pauc ◽  
Amit Solanki
Keyword(s):  
Solar Cell ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
High Density ◽  
Core Shell ◽  
Third Generation ◽  
Silicon Nanowire Array

An Electrochemical Glucose Biosensor with a Silicon Nanowire Array Electrode

2015 ◽  
Vol 162 (10) ◽  
pp. B264-B268 ◽  
Author(s):  
Che-Wei Hsu ◽  
Wen-Chao Feng ◽  
Fang-Ci Su ◽  
Gou-Jen Wang
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Array ◽  
Glucose Biosensor ◽  
Array Electrode ◽  
Silicon Nanowire Array

ChemInform Abstract: A Palladium-Nanoparticle and Silicon-Nanowire-Array Hybrid: A Platform for Catalytic Heterogeneous Reactions.

ChemInform ◽  
2014 ◽  
Vol 45 (30) ◽  
pp. no-no
Author(s):  
Yoichi M. A. Yamada ◽  
Yoshinari Yuyama ◽  
Takuma Sato ◽  
Shigenori Fujikawa ◽  
Yasuhiro Uozumi
Keyword(s):  
Silicon Nanowire ◽  
Nanowire Array ◽  
Heterogeneous Reactions ◽  
Palladium Nanoparticle ◽  
Silicon Nanowire Array

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

Sign in / Sign up

Export Citation Format

Share Document