scholarly journals Chip-integrated plasmonic cavity-enhanced single nitrogen-vacancy center emission

Nanoscale ◽  
2017 ◽  
Vol 9 (45) ◽  
pp. 17902-17908 ◽  
Author(s):  
Hamidreza Siampour ◽  
Shailesh Kumar ◽  
Sergey I. Bozhevolnyi
Keyword(s):  
Color Center ◽  
Waveguide Mode ◽  
Single Photon ◽  
Photon Emission ◽  
Plasmonic Waveguide ◽  
Nitrogen Vacancy ◽  
Single Photon Emission ◽  
Nitrogen Vacancy Center ◽  
Selective Enhancement ◽  
Vacancy Center

We demonstrate a chip-integrated cavity for the selective enhancement of single photon emission from a diamond color center coupled to a plasmonic waveguide mode.

scholarly journals Narrow-band single photon emission at room temperature based on a single nitrogen-vacancy center coupled to an all-fiber-cavity

2014 ◽  
Vol 105 (7) ◽  
pp. 073113 ◽  
Author(s):  
Roland Albrecht ◽  
Alexander Bommer ◽  
Christoph Pauly ◽  
Frank Mücklich ◽  
Andreas W. Schell ◽  
...  
Keyword(s):  
Room Temperature ◽  
Narrow Band ◽  
Single Photon ◽  
Photon Emission ◽  
Nitrogen Vacancy ◽  
Single Photon Emission ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Nitrogen Vacancy ◽  
Oxide Semiconductor ◽  
Nitrogen Vacancy Center ◽  
Photon Sources ◽  
Vacancy Center

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.

Absorption of a heralded single photon by a nitrogen-vacancy center in diamond (Conference Presentation)

2020 ◽  
Author(s):  
Maria Gieysztor ◽  
Marta Misiaszek ◽  
Joscelyn van der Veen ◽  
Wojciech Gawlik ◽  
Fedor Jelezko ◽  
...  
Keyword(s):  
Single Photon ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Vacancy Center

scholarly journals Efficient Single-Photon Coupling from a Nitrogen-Vacancy Center Embedded in a Diamond Nanowire Utilizing an Optical Nanofiber

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Yuya Yonezu ◽  
Kentaro Wakui ◽  
Kentaro Furusawa ◽  
Masahiro Takeoka ◽  
Kouichi Semba ◽  
...  
Keyword(s):  
Single Photon ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Center ◽  
Photon Coupling ◽  
Vacancy Center

Sample fabrication and metrological characterization of single-photon emitters based on nitrogen vacancy centers in nanodiamonds

2021 ◽  
Author(s):  
Franziska Hirt ◽  
Justus Christinck ◽  
Helmuth Hofer ◽  
Beatrice Rodiek ◽  
Stefan Kueck
Keyword(s):  
Laser Scanning ◽  
Single Photon ◽  
Photon Emission ◽  
Nitrogen Vacancy ◽  
Confocal Laser ◽  
Preparation Technique ◽  
Single Photon Emission ◽  
Comparative Characterization ◽  
Piranha Solution

Abstract Quantum metrology requires a stable single-photon emission and a high single-photon purity. Since nitrogen-vacancy (NV-) centers provide both features at room temperature, they are promising candidates for the application in this field [1, 2]. The knowledge about a suitable sample preparation technique is crucial, because the quality of the single-photon emission strongly depends on the sample purity and on the spatial resolvability of the emitters. This work presents the comparison and optimization of various sample fabrication techniques of nitrogen vacancy center doped nanodiamonds on standard cover glasses. The preparation is followed by a comparative characterization of the centers of the various samples. The sample fabrication includes the removal of contaminants on the cover glass surface. This was carried out by using peroxymonosulfuric acid (piranha solution, H2SO5) in comparison to the commercially available lye Hellmanex III (by Hellma Analytics). After cleaning the cover glasses, volumes of various nanodiamond dilutions were applied via spin coating. In subsequent steps, the nanodiamonds themselves were cleaned with peroxymonosulfuric acid, too, to remove contaminants resulting from the manufacturing process, e.g. graphite. The samples were analyzed by using a confocal laser scanning microscope with an oil immersion objective. Single-photon purity was determined by measuring the second order correlation function with a Hanbury Brown and Twiss setup. Spectral analysis revealed the presence of NV-- and NV0-centers. It was shown that a suitable cleansing method has an immense impact on single-photon emission, as was proven by a comparative characterization of differently manufactured nanodiamonds.

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