Wafer-scale production of vertical SnS multilayers for high-performing photoelectric devices

Nanoscale ◽  
2017 ◽  
Vol 9 (41) ◽  
pp. 15804-15812 ◽  
Author(s):  
Malkeshkumar Patel ◽  
Hong-Sik Kim ◽  
Joondong Kim
Keyword(s):  
High Speed ◽  
Scale Production ◽  
High Quality ◽  
Wafer Scale ◽  
High Performing ◽  
Photoelectric Devices

This study achieved wafer-scale production of high quality tin monosulfide (SnS) layers. Vertical standing multilayers of SnS enabled self-biased, high speed, and stable photodetection.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

scholarly journals Electrocatalysis for Oxygen Reduction Reaction on EDTAFeNa and Melamine co-Derived Self-Supported Fe-N-C Materials

Catalysts ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 623
Author(s):  
Mengfan Shen ◽  
Ziwei Meng ◽  
Tong Xue ◽  
Hongfang Shen ◽  
Xiang-Hui Yan
Keyword(s):  
Oxygen Reduction Reaction ◽  
Oxygen Reduction ◽  
Large Scale ◽  
Acid Leaching ◽  
Reduction Reaction ◽  
Scale Production ◽  
Final Annealing ◽  
High Performing ◽  
Half Wave ◽  
Mesoscopic Structure

To explore high-performing alternatives to platinum-based catalysts is highly desirable for lowering costs and thus promoting fuel cell commercialization. Herein, self-supported Fe-N-C materials were prepared by the pyrolysis of dual precursors including EDTA ferric sodium (EDTAFeNa) and melamine (MA), followed by acid-leaching and final annealing. Towards an oxygen reduction reaction (ORR) in 0.1 M KOH, the as-prepared MA/EDTAFeNa-HT2 delivered onset (Eonset) and half-wave (E1/2) potentials of 0.97 and 0.84 V vs. RHE, respectively, identical with that of a state-of-the-art Pt/C catalyst, accompanied with predominantly a four-electron pathway. The introduction of MA and extension of acid-leaching promoted a positive shift of 50 mV for E1/2 relative to that of only the EDTAFeNa-derived counterpart. It was revealed that the enhancement of ORR activity is attributed to a decrease in magnetic Fe species and increase in pyridinic/quanternary nitrogen content whilst nearly excluding effects of the graphitization degree, variety of crystalline iron species, and mesoscopic structure. The usage of dual precursors exhibited great potential for the large-scale production of inexpensive and efficient Fe-N-C materials.

scholarly journals Regional education on endoscopic surgery using a teleconference system with high-quality video via the internet: Saga surgical videoconferences

2020 ◽  
Vol 20 (1) ◽  
Author(s):  
Tatsuya Manabe ◽  
Mitsuhiro Takasaki ◽  
Takao Ide ◽  
Kenji Kitahara ◽  
Seiji Sato ◽  
...  
Keyword(s):  
Endoscopic Surgery ◽  
Educational System ◽  
High Speed ◽  
The Internet ◽  
Web Conferencing ◽  
High Quality ◽  
Anatomical Structures ◽  
Quality Video ◽  
High Quality Video ◽  
Conferencing System

Abstract Background Effective education about endoscopic surgery (ES) is greatly needed for unskilled surgeons, especially at low-volume institutions, to maintain the safety of patients. We have tried to establish the remote educational system using videoconference system through the internet for education about ES to surgeons belonging to affiliate institutions. The aim of this manuscript was to report the potential to establish a comfortable remote educational system and to debate its advantages. Methods We established a local remote educational conference system by combining the use of a general web conferencing system and a synchronized remote video playback system with annotation function through a high-speed internet. Results During 2014–2019, we conducted 14 videoconferences to review and improve surgeons’ skills in performing ES at affiliated institutions. At these conferences, while an uncut video of ES that had been performed at one of the affiliated institutions was shown, the surgical procedure was discussed frankly, and expert surgeons advised improvements. The annotation system is useful for easy, prompt recognition among the audience regarding anatomical structures and procedures that are difficult to explain verbally. Conclusions This system is of low initial cost and offers easy participation and high-quality videos. It would therefore be a useful tool for regional ES education.

High-speed and high-quality TSV filling with the direct ultrasonic agitation for copper electrodeposition

2017 ◽  
Vol 180 ◽  
pp. 30-34 ◽  
Author(s):  
Fuliang Wang ◽  
Peng Zeng ◽  
Yan Wang ◽  
Xinyu Ren ◽  
Hongbin Xiao ◽  
...  
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
High Quality ◽  
Ultrasonic Agitation

Prediction of Surface Roughness in Compressed Air Jet Assisted High Speed End Milling of Silicon Using Diamond Coated Tools

2012 ◽  
Vol 576 ◽  
pp. 41-45
Author(s):  
A.K.M. Nurul Amin ◽  
M.A. Mahmud ◽  
M.D. Arif
Keyword(s):  
Mathematical Model ◽  
Surface Roughness ◽  
Surface Finish ◽  
High Speed ◽  
End Milling ◽  
Silicon Wafers ◽  
Compressed Air ◽  
Machining Parameters ◽  
High Quality ◽  
Ductile Mode

The majority of semiconductor devices are made up of silicon wafers. Manufacturing of high-quality silicon wafers includes numerous machining processes, including end milling. In order to end mill silicon to a nano-meteric surface finish, it is crucial to determine the effect of machining parameters, which influence the machining transition from brittle to ductile mode. Thus, this paper presents a novel experimental technique to study the effects of machining parameters in high speed end milling of silicon. The application of compressed air, in order to blow away the chips formed, is also investigated. The machining parameters’ ranges which facilitate the transition from brittle to ductile mode cutting as well as enable the attainment of high quality surface finish and integrity are identified. Mathematical model of the response parameter, the average surface roughness (Ra) is subsequently developed using RSM in terms of the machining parameters. The model was determined, by Analysis of Variance (ANOVA), to have a confidence level of 95%. The experimental results show that the developed mathematical model can effectively describe the performance indicators within the controlled limits of the factors that are being considered.

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