Interfacial charge transfer in functionalized multi-walled carbon nanotube@TiO2 nanofibres

Nanoscale ◽  
2017 ◽  
Vol 9 (23) ◽  
pp. 7911-7921 ◽  
Author(s):  
Avishek Saha ◽  
Alicia Moya ◽  
Axel Kahnt ◽  
Daniel Iglesias ◽  
Silvia Marchesan ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Carbon Nanotube ◽  
Interfacial Charge Transfer ◽  
Multi Walled Carbon Nanotube ◽  
Interfacial Charge

Strong-coupled hybrid structure of carbon nanotube and MoS2 monolayer with ultrafast interfacial charge transfer

Nanoscale ◽  
2019 ◽  
Vol 11 (37) ◽  
pp. 17195-17200 ◽  
Author(s):  
Can Liu ◽  
Hao Hong ◽  
Qinghe Wang ◽  
Ping Liu ◽  
Yonggang Zuo ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Carbon Nanotube ◽  
Strong Coupling ◽  
Hybrid Structure ◽  
Interfacial Charge Transfer ◽  
Mos2 Monolayer ◽  
Ultrafast Charge Transfer ◽  
Interfacial Charge

A strong-coupled nanotube-MoS2 hybrid structure is constructed, which shows strong coupling and ultrafast charge transfer across the interface.

Self-Assembly and Its Impact on Interfacial Charge Transfer in Carbon Nanotube/P3HT Solar Cells

ACS Nano ◽  
2010 ◽  
Vol 4 (11) ◽  
pp. 6599-6606 ◽  
Author(s):  
Marco Bernardi ◽  
Michele Giulianini ◽  
Jeffrey C. Grossman
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Carbon Nanotube ◽  
Self Assembly ◽  
Interfacial Charge Transfer ◽  
Interfacial Charge

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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