scholarly journals Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

Nanoscale ◽  
2017 ◽  
Vol 9 (23) ◽  
pp. 7839-7846 ◽  
Author(s):  
Jessica L. Boland ◽  
Gözde Tütüncüoglu ◽  
Juliane Q. Gong ◽  
Sonia Conesa-Boj ◽  
Christopher L. Davies ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electron Mobility ◽  
Optoelectronic Devices ◽  
Semiconductor Nanowires ◽  
Core Shell ◽  
Precise Control ◽  
Shell Nanowires

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation into novel electronic and optoelectronic devices.

scholarly journals Multiple radial phosphorus segregations in GaAsP core-shell nanowires

Nano Research ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 157-164
Author(s):  
H. Aruni Fonseka ◽  
Yunyan Zhang ◽  
James A. Gott ◽  
Richard Beanland ◽  
Huiyun Liu ◽  
...  
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Semiconductor Nanowires ◽  
Quantum Structures ◽  
Core Shell ◽  
Controlled Growth ◽  
Radial Segregation ◽  
Common Observation ◽  
Primary Band ◽  
Shell Nanowires

AbstractHighly faceted geometries such as nanowires are prone to form self-formed features, especially those that are driven by segregation. Understanding these features is important in preventing their formation, understanding their effects on nanowire properties, or engineering them for applications. Single elemental segregation lines that run along the radii of the hexagonal cross-section have been a common observation in alloy semiconductor nanowires. Here, in GaAsP nanowires, two additional P rich bands are formed on either side of the primary band, resulting in a total of three segregation bands in the vicinity of three of the alternating radii. These bands are less intense than the primary band and their formation can be attributed to the inclined nanofacets that form in the vicinity of the vertices. The formation of the secondary bands requires a higher composition of P in the shell, and to be grown under conditions that increase the diffusivity difference between As and P. Furthermore, it is observed that the primary band can split into two narrow and parallel bands. This can take place in all six radii, making the cross sections to have up to a maximum of 18 radial segregation bands. With controlled growth, these features could be exploited to assemble multiple different quantum structures in a new dimension (circumferential direction) within nanowires.

scholarly journals High electron mobility in strained GaAs nanowires

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Leila Balaghi ◽  
Si Shan ◽  
Ivan Fotev ◽  
Finn Moebus ◽  
Rakesh Rana ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electron Mobility ◽  
High Performance ◽  
Room Temperature ◽  
High Mobility ◽  
Semiconductor Nanowires ◽  
Core Shell ◽  
High Electron ◽  
Bulk Crystals ◽  
Gaas Nanowires

AbstractTransistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

scholarly journals Modulation Doping of GaAs/AlGaAs Core–Shell Nanowires With Effective Defect Passivation and High Electron Mobility

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 1336-1342 ◽  
Author(s):  
Jessica L. Boland ◽  
Sonia Conesa-Boj ◽  
Patrick Parkinson ◽  
Gözde Tütüncüoglu ◽  
Federico Matteini ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Core Shell ◽  
High Electron ◽  
Modulation Doping ◽  
High Electron Mobility ◽  
Defect Passivation ◽  
Shell Nanowires

Electrical Conductivity of Ni-YSZ Anode for SOFCs According to the Ni Powder Size Variations in Core-shell Structure

2015 ◽  
Vol 53 (4) ◽  
pp. 287-293
Author(s):  
Byung-Hyun Choi ◽  
Young Jin Kang ◽  
Sung-Hun Jung ◽  
Yong-Tae An ◽  
Mi-Jung Ji
Keyword(s):  
Electrical Conductivity ◽  
Shell Structure ◽  
Core Shell ◽  
Powder Size ◽  
Ni Powder ◽  
Core Shell Structure

One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

2019 ◽  
Author(s):  
Jiajia Tao ◽  
Hong-Ping Ma ◽  
Kaiping Yuan ◽  
Yang Gu ◽  
Jianwei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Water Splitting ◽  
Atomic Layer ◽  
Photoelectrochemical Water Splitting ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Highly Efficient ◽  
Layer Deposition ◽  
Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

scholarly journals Synthesis and characterization of silica–lead sulfide core–shell nanospheres for applications in optoelectronic devices

2021 ◽  
Author(s):  
A. K. Romero-Jaime ◽  
M. C. Acosta-Enríquez ◽  
D. Vargas-Hernández ◽  
J. C. Tánori-Córdova ◽  
H. A. Pineda León ◽  
...  
Keyword(s):  
Lead Sulfide ◽  
Optoelectronic Devices ◽  
Synthesis And Characterization ◽  
Core Shell

scholarly journals Electromagnetic field emitted by core–shell semiconductor nanowires driven by an alternating current

2021 ◽  
Vol 130 (3) ◽  
pp. 034301
Author(s):  
Miguel Urbaneja Torres ◽  
Kristjan Ottar Klausen ◽  
Anna Sitek ◽  
Sigurdur I. Erlingsson ◽  
Vidar Gudmundsson ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Alternating Current ◽  
Semiconductor Nanowires ◽  
Core Shell

scholarly journals Broadband Meta‐Absorber with Au/Ni Core–Shell Nanowires for Solar Vapor Generator

2021 ◽  
Vol 5 (7) ◽  
pp. 2100185
Author(s):  
Soomin Son ◽  
Jaemin Park ◽  
Sucheol Ju ◽  
Daihong Huh ◽  
Junho Jun ◽  
...  
Keyword(s):  
Core Shell ◽  
Vapor Generator ◽  
Shell Nanowires
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