A facile approach to synthesize oxygen doped g-C3N4 with enhanced visible light activity under anoxic conditions via oxygen-plasma treatment

2018 ◽  
Vol 42 (7) ◽  
pp. 4998-5004 ◽  
Author(s):  
Xiaoyu Qu ◽  
Shaozheng Hu ◽  
Jin Bai ◽  
Ping Li ◽  
Guang Lu ◽  
...  
Keyword(s):  
Visible Light ◽  
Plasma Treatment ◽  
Organic Pollutants ◽  
Photocatalytic Oxidation ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Anoxic Conditions ◽  
Light Activity ◽  
Oxidation Technology

Photocatalytic oxidation technology for the anoxic removal of organic pollutants that exist under some oxygen-free conditions is attractive but challenging.

scholarly journals The Amorphization of Monolayer MoS2 Induced by Strong Oxygen Plasma Treatment

2019 ◽  
Vol 26 (2) ◽  
pp. 143-146
Author(s):  
Jian-Ling MENG ◽  
Jian-Qi ZHU ◽  
Shun-Tian JIA ◽  
Xiao REN
Keyword(s):  
Visible Light ◽  
Plasma Treatment ◽  
Raman Spectra ◽  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Visible Light Photocatalysis ◽  
Monolayer Mos2 ◽  
X Ray ◽  
Raman Modes

By strong oxygen plasma treatment on monolayer MoS2, we observe the disappearance of the Raman modes of MoS2. We propose the hypothesis that the state of MoS2 translates from crystal to amorphous after strong oxygen plasma treatment. The evidences of no MoO3 formation shown by Raman spectra and the appearance of the Mo6+ peak and decreased O concentration shown by X-ray photoelectron spectroscopy support our hypothesis. The amorphization of monolayer MoS2 is further confirmed by the quenching of photoluminescence (PL) and the disappearance of two absorption peaks related to A, B exciton which demonstrates the disordered bandgap. Finally, we found that the amorphous MoS2 can improve the absorption fraction at the visible light (500~ 750 nm) which is potential for future visible light photocatalysis.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

Fermi-level depinning in metal/Ge interface using oxygen plasma treatment

2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Oxygen plasma treatment of HKUST-1 for porosity retention upon exposure to moisture

2017 ◽  
Vol 53 (89) ◽  
pp. 12100-12103 ◽  
Author(s):  
Jaeyeon Bae ◽  
Jin-Woo Jung ◽  
Hyo Yul Park ◽  
Chang-Hee Cho ◽  
Jinhee Park
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

HKUST-1, a representative MOF, can be both regenerated and protected against moisture deactivation by treatment with O2 plasma.

Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

2011 ◽  
Vol 11 (11) ◽  
pp. 3031-3035 ◽  
Author(s):  
W. S. Shih ◽  
S. J. Young ◽  
L. W. Ji ◽  
W. Water ◽  
T. H. Meen ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Effect Of Oxygen

Protective films formed on copper by oxygen plasma treatment

1997 ◽  
Vol 431 (2) ◽  
pp. 297-299 ◽  
Author(s):  
N. Bellakhal ◽  
K. Draou ◽  
B.G. Che´ron ◽  
J.L. Brisset
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Protective Films
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