scholarly journals Covalent hybrids based on Re(i) tricarbonyl complexes and polypyridine-functionalized polyoxometalate: synthesis, characterization and electronic properties

2017 ◽  
Vol 46 (30) ◽  
pp. 10029-10036 ◽  
Author(s):  
Thomas Auvray ◽  
Marie-Pierre Santoni ◽  
Bernold Hasenknopf ◽  
Garry S. Hanan
Keyword(s):  
Electronic Properties ◽  
Bipyridine Ligand

A series of [Re(CO)3Br(N^N)] (N^N = substituted 2,2′-bipyridine ligand) complexes based on polypyridine-functionalized Dawson polyoxometalate (1–3) has been synthesized.

Spectroelectrochemical studies of a ruthenium complex containing the pH sensitive 4,4′-dihydroxy-2,2′-bipyridine ligand

2018 ◽  
Vol 47 (12) ◽  
pp. 4149-4161 ◽  
Author(s):  
Erin J. Viere ◽  
Ashley E. Kuhn ◽  
Margaret H. Roeder ◽  
Nicholas A. Piro ◽  
W. Scott Kassel ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ruthenium Complex ◽  
Ph Sensitive ◽  
Ruthenium Polypyridyl ◽  
Polypyridyl Complex ◽  
Structural And Electronic Properties ◽  
Bipyridine Ligand

The effects of oxidation by one electron on the structural and electronic properties of a ruthenium polypyridyl complex with a pH sensitive ligand is detailed.

Ruthenium complexes bearing π-extended pyrrolo-styryl-bipyridine ligand: electronic properties and evaluation as photosensitizers

2009 ◽  
pp. 63-70 ◽  
Author(s):  
Arnald Grabulosa ◽  
David Martineau ◽  
Marc Beley ◽  
Philippe C. Gros ◽  
Silvia Cazzanti ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Ruthenium Complexes ◽  
Bipyridine Ligand

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt

Electronic properties of TTF-TCNQ : a connection between theory and experiment

1978 ◽  
Vol 39 (12) ◽  
pp. 1355-1363 ◽  
Author(s):  
L.G. Caron ◽  
M. Miljak ◽  
D. Jerome
Keyword(s):  
Electronic Properties ◽  
Theory And Experiment
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